A source selection module for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The source selection module includes a beam dispersing element for dispersing the broadband illumination beam; a grating light valve module for spatially modulating the broadband illumination beam subsequent to being dispersed; and a beam combining element to recombine the spatially modulated broadband illumination beam to obtain an output source beam.

Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.

Embodiments described herein provide an asymmetric optical metrology system for evaluating and inspecting the performance of optical devices, such as augmented reality (AR) waveguide combiners. The system utilizes an asymmetric optical configuration and fly-eye illumination to enhance the detection limit of image sharpness and the accuracy of luminance uniformity. By employing different lenses with various focal lengths, the system increases the sampling rate in the angular space, addressing the challenges of form factor limitations and pixel density inherent in conventional metrology tools. Embodiments described herein offer improved contrast and sharp image details, as well as a compact design, making it suitable for the development, optimization, and quality control of optical devices, such as AR waveguide combiners.

A method for processing images for metrology using a charged particle beam tool may include obtaining, from the charged particle beam tool, an image of a portion of a sample. The method may further include processing the image using a first image processing module to generate a processed image. The method may further include determining image quality characteristics of the processed image and determining whether the image quality characteristics of the processed image satisfy predetermined imaging criteria. The method may further include in response to the image quality characteristics of the processed image not satisfying the imaging criteria, updating a tuning condition of the charged-particle beam tool, acquiring an image of the portion of the sample using the charged-particle beam tool that has the updated tuning condition, and processing the acquired image using the first image processing module to enable the processed acquired image to satisfy the predetermined imaging criteria.

An inspection system, a lithographic apparatus, and a method are provided. The inspection system includes an illumination system, an optical system, a shutter system, an objective system and a detector. The illumination system is configured to generate an illumination beam. The optical system is configured to split the illumination beam into a first sub-beam and a second sub-beam. The shutter system is configured to independently control a transmittance of the first sub-beam and the second subbeam. The objective system is configured to receive the first sub-beam and the second beam from the optical system and direct the first sub-beam and the second sub-beam towards a substrate having a target structure. The detector is configured to receive an image or a diffracted image of the target structure.

Disclosed is a metrology method and associated devices. The method comprises obtaining a first image, said first image being subject to one or more non-isoplanatic aberrations of an optical system used to capture said image; and non-iteratively correcting said first image for the effect of said one or more non-isoplanatic aberrations by performing one or both of: a field non-isoplanatic correction operation in field space for said first image, said field space corresponding to a field plane of the optical system; and a pupil non-isoplanatic correction operation in pupil space for said first image, said pupil space corresponding to a pupil plane of the optical system. Said one or more non-isoplanatic aberrations comprise a class of non-isoplanatic aberrations describable as a convolution combined with an object distortion and/or a pupil distortion.

Disclosed is an optical inspection device for elements pertaining to semiconductor lithography, comprising an imaging device for generating an image of an element, said imaging device being arranged in a first partial volume, and a second partial volume comprising a holding device for receiving the element. A separating element is arranged between the two partial volumes. Included is a position measuring device comprising reference marks for emission of electromagnetic radiation used in the position measuring device and the reference marks are respectively connected to the imaging device and the holding device. The separating element comprises a partition wall having an opening. The opening serves for image recording by the imaging device and the electromagnetic radiation which emanates from the reference mark mounted on the imaging device and proceeds in the position measuring device passes through the opening.

The invention provides a positioning system to determine an absolute position of a moveable target relative to a reference, comprising an interferometer system with a first light source to emit light at a fixed frequency and a second light source to emit light at at least two different frequencies. The positioning system is configured to determine, based on movement of the target, a phase difference curve associated with a first frequency of the second light source and a phase difference curve associated with a second frequency of the second light source as a function of a phase difference associated with the fixed frequency of the first light source and to determine a cross-point to determine the absolute position of the moveable target. The invention also relates to a lithographic apparatus and corresponding method.

Disclosed is a method of correcting a measured spectrum for the effects of a source spectrum resulting from an illumination source. The method comprises obtaining a measured spectrum in terms of a measurement parameter, the measured spectrum being obtained from captured diffracted radiation from a periodic structure following illumination of said periodic structure using source radiation from said illumination source, the periodic structure being the spectrometer grating and an object being measured; determining an estimate of the source spectrum from the measured spectrum; and correcting the measured spectrum using the estimate of the source spectrum.

The techniques disclosed herein relate to an arrangement, a method and a computer program product for system-integrated calibration of the facet mirrors of a microlithographic illumination system. Calibration beam paths leading via the facet mirrors between a calibration radiation source and a calibration radiation sensor are defined, only one pivotable micromirror of the single facet mirror constructed from micromirrors being involved in each of said calibration beam paths. By pivoting the micromirror involved in a defined calibration beam path, a specific optimum pivot position, whose underlying orientation of the micromirror can also be calculated geometrically, can be found on the basis of the calibration radiation sensor. By comparing the calculated orientation with the orientation determined by an orientation sensor at the micromirror, the orientation sensor of the micromirror of the facet mirror can be calibrated.