A method for estimating process characteristics is provided. The method can include collecting process data from a spectral emitter and a spectral sensor during a substrate processing operation, and generating a calibrated model for the process data. Generating a calibrated model can include selecting a calibration option from a set of calibration options, based on a degree of freedom associated with a given calibration option, and calibrating a base model to generate the calibrated model. The base model is calibrated using the selected calibration option and a portion of the first process data.

An optical arrangement eliminates the use of a quad non polarized beam splitter (QNPBS) and the need for image stitching. The optical arrangement provides an enhanced transmission gain as with a QNPBS to optimize system throughput. A metrology system (600) includes an illumination mode selector (IMS) (650) comprising a multi-aperture pattern having transmissive portions and reflective portions. The IMS (650) is positioned in a pupil plane (655) of the system (600), and configured to: transmit portions (671) of radiation (604) toward a diffraction grating target (610); and reflect diffracted radiation from the target (610) along a second optical path (631) toward a detector (662). Area decoupling of transmissive and reflective portions on the IMS (650) optimizes the illumination and detection light intensity simultaneously. Plus and minus first diffraction order diffracted radiation from the target (610) may be reflected by two reflective quadrants of the multi-aperture pattern, the two reflective quadrants located on a back or non-radiation source facing side (651) of the IMS (650).

Disclosed is a method of determining an illumination-detection system alignment of an illumination-detection system describing alignment of at least one detector and/or measurement illumination of a metrology apparatus in terms of two or more illumination-detection system alignment parameters, each illumination-detection system alignment parameter relating to a respective degree of freedom for aligning the detector and/or the measurement illumination. The method comprises obtaining a diffraction pattern relating to diffraction of broadband radiation from a structure; transforming each of one or more diffraction orders of the diffraction pattern to a respective region coordinate system, each region coordinate system comprising a first axis and a second axis, each region coordinate system being such that said first axis is aligned in relation to a direction of an intensity metric of each transformed diffraction order; and determining illumination-detection system alignment parameter values for the illumination-detection system alignment parameters.

Apparatus and method for measuring one or more parameters of a substrate using source radiation emitted from a radiation source and directed onto the substrate. The apparatus comprises at least one reflecting element and at least one detector. The at least one reflecting element is configured to receive a reflected radiation resulting from reflection of the source radiation from the substrate and further reflect the reflected radiation into a further reflected radiation. The at least one detector is configured for measurement of the further reflected radiation for determination of at least an alignment of the source radiation and/or the substrate.

Various examples herein describe an apparatus and related method to calibrate two in-line lithographic tools used as part of in-line, panel-production equipment. The two lithographic tools are used to expose opposing sides of a panel or substrate, such as, for example, an Advanced Integrated Circuit Substrates (AICS) panel or another type of panel or substrate, such as a copper-clad laminate (CCL) panel). The panel may be, for example, a flat-panel display or another substrate type. Other systems, apparatuses, and methods are also disclosed.

Disclosed is a metrology method. The method comprises illuminating a target comprising one or more sub-targets on a substrate using underfilled illumination such that an illumination beam profile underfills each of said one or more sub-targets; capturing scattered radiation resultant from said illuminating the target; imaging the scattered radiation at a detection image plane to obtain an image; and determining a parameter of interest from the imaged scattered radiation.

To improve quality assurance and durability of coated components, a multifaceted inspection coupon is provided that includes opposing flat surfaces, separated by sides which include one or more curves or fillets representing surfaces of the coated components to be inspected. The inspection coupon is coated on all sides in the same manner as the components to be inspected, whereby later analysis of the coupon provides quality assurance of all coated surfaces of the components at once.

An overlay measurement device includes a light source configured to direct an illumination to an overlay measurement target in which a first overlay key in a first layer and a second overlay key in a second layer are positioned, the second layer being stacked on an upper portion or a lower portion of the first layer, a lens assembly including an objective lens configured to condense the illumination on a measurement position of at least one point in the overlay measurement target and a lens focus actuator configured to control a distance between the objective lens and the overlay measurement target, and a detector configured to acquire a focus image at the measurement position based on a beam reflected on the measurement position.

A measuring method for measuring distortion of a substrate includes capturing images of a plurality of partial regions of a pattern formed in a device region of the substrate, measuring a position of the pattern based on the images acquired by the image capturing, and processing of determining a period of the pattern based on the images acquired by the image capturing, and determining distortion in the region of the substrate where the pattern is formed, based on the determined period and a measurement result acquired in the measuring.

According to one aspect of the present invention, a pattern inspection apparatus includes a height adjustment mechanism configured to adjust a height position of a pattern forming surface of the target object to a focus height position of the inspection light by using a height position deviation amount distribution which is acquired based on applying the measuring light to the target object and indicates a deviation amount of the pattern forming surface of the target object deviated from the focus height position, wherein in a case of scanning a k-th (k being an integer of at least 1) stripe region with the inspection light, an irradiation position of the inspection light on the target object and an irradiation position of the measuring light on the target object are set such that a (k+m)th (m being an integer of at least 1) stripe region is scanned with the measuring light.