Patent classifications
G05F1/567
BANDGAP VOLTAGE REFERENCE CORE CIRCUIT, BANDGAP VOLTAGE REFERENCE SOURCE AND SEMICONDUCTOR MEMORY
A bandgap voltage reference core circuit includes: a generating circuit, a first voltage dividing circuit and a second voltage dividing circuit. The generating circuit is configured to generate a positive temperature coefficient voltage and a negative temperature coefficient voltage, and obtain a positive temperature coefficient current and a negative temperature coefficient current based on the positive temperature coefficient voltage and the negative temperature coefficient voltage. The first voltage dividing circuit is connected to the generating circuit and the second voltage dividing circuit respectively, and is configured to generate an initial current based on the positive temperature coefficient current and the negative temperature coefficient current. The second voltage dividing circuit is configured to determine a reference voltage based on the initial current. The first voltage dividing circuit and the second voltage dividing circuit affect a voltage dividing proportion of the reference voltage.
BANDGAP VOLTAGE REFERENCE CORE CIRCUIT, BANDGAP VOLTAGE REFERENCE SOURCE AND SEMICONDUCTOR MEMORY
A bandgap voltage reference core circuit includes: a generating circuit, a first voltage dividing circuit and a second voltage dividing circuit. The generating circuit is configured to generate a positive temperature coefficient voltage and a negative temperature coefficient voltage, and obtain a positive temperature coefficient current and a negative temperature coefficient current based on the positive temperature coefficient voltage and the negative temperature coefficient voltage. The first voltage dividing circuit is connected to the generating circuit and the second voltage dividing circuit respectively, and is configured to generate an initial current based on the positive temperature coefficient current and the negative temperature coefficient current. The second voltage dividing circuit is configured to determine a reference voltage based on the initial current. The first voltage dividing circuit and the second voltage dividing circuit affect a voltage dividing proportion of the reference voltage.
Voltage reference temperature compensation circuits and methods
Systems and methods are provided for generating a temperature compensated reference voltage. A temperature compensation circuit may include a proportional-to-absolute temperature (PTAT) circuit, and a complementary-to-absolute temperature (CTAT) circuit, with the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input. The PTAT circuit may be configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit may be configured to generated a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit.
Voltage reference temperature compensation circuits and methods
Systems and methods are provided for generating a temperature compensated reference voltage. A temperature compensation circuit may include a proportional-to-absolute temperature (PTAT) circuit, and a complementary-to-absolute temperature (CTAT) circuit, with the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input. The PTAT circuit may be configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit may be configured to generated a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit.
Temperature-based bandgap reference circuit
Circuits, systems, and methods to switch modes based on temperature and to provide reference voltages are discussed herein. For example, a bandgap reference circuit may include one or more impedance elements and one or more switches coupled to the one or more impedance elements. The one or more switches may be controllable based on a temperature signal. The bandgap reference circuit may be configured to provide a bandgap reference voltage that is associated with less than a particular amount of voltage variation.
Voltage Reference Temperature Compensation Circuits and Methods
Systems and methods are provided for generating a temperature compensated reference voltage. A temperature compensation circuit may include a proportional-to-absolute temperature (PTAT) circuit, and a complementary-to-absolute temperature (CTAT) circuit, with the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input. The PTAT circuit may be configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit may be configured to generated a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit.
Voltage Reference Temperature Compensation Circuits and Methods
Systems and methods are provided for generating a temperature compensated reference voltage. A temperature compensation circuit may include a proportional-to-absolute temperature (PTAT) circuit, and a complementary-to-absolute temperature (CTAT) circuit, with the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input. The PTAT circuit may be configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit may be configured to generated a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit.
Temperature compensation circuit and semiconductor integrated circuit using the same
The disclosure provides a temperature compensation circuit that generates a temperature-compensated current and an integrated semiconductor circuit using the temperature compensation circuit. The temperature compensation circuit includes: a first PTAT current source which has a first emitter area ratio and generates a first current, the first current having a first temperature coefficient proportional to the absolute temperature; a second PTAT current source which has a second emitter area ratio and generates a second current, the second current having a second temperature coefficient proportional to the absolute temperature; an adjustment circuit which adjusts the current generated by the first PTAT current source; and a differential circuit which outputs the difference between the current adjusted by the adjustment circuit and the current generated by the second PTAT current source.
Temperature compensation circuit and semiconductor integrated circuit using the same
The disclosure provides a temperature compensation circuit that generates a temperature-compensated current and an integrated semiconductor circuit using the temperature compensation circuit. The temperature compensation circuit includes: a first PTAT current source which has a first emitter area ratio and generates a first current, the first current having a first temperature coefficient proportional to the absolute temperature; a second PTAT current source which has a second emitter area ratio and generates a second current, the second current having a second temperature coefficient proportional to the absolute temperature; an adjustment circuit which adjusts the current generated by the first PTAT current source; and a differential circuit which outputs the difference between the current adjusted by the adjustment circuit and the current generated by the second PTAT current source.
VOLTAGE SUPPLY CIRCUITS, THREE-DIMENSIONAL MEMORY DEVICES, PERIPHERAL CIRCUIT, AND METHODS FOR ADJUSTING VOLTAGE SUPPLY CIRCUIT
A voltage supply circuit includes a temperature compensation circuit and a voltage regulation circuit. The temperature compensation circuit includes a comparator circuit comparing a device temperature value with a reference value to output a comparison result, and a compensation controller circuit receiving the comparison result, a compensation value control signal, and a compensation enable signal, and outputting a voltage control signal according to the comparison result. The voltage regulation circuit receives the voltage control signal and provides a voltage output according to the control signal.