A memory device to perform a calibration of read voltages of a group of memory cells. For example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine an amount of accumulated storage charge loss in the group of memory cells. Subsequently, the memory device can perform a read voltage calibration based on the determined amount of accumulated storage charge loss and a look up table.

A descrambler receives data from a memory device. The descrambler calculates a sub-syndrome weight for multiple bits in each of the plurality of descrambled sequences using a set parity check matrix to generate multiple sub-syndrome weights, one for each of the plurality of descrambled sequences. The descrambler selects a sub-syndrome weight among the multiple sub-syndrome weights. The descrambler determines, as a correct scrambler sequence for descrambling the data, a scrambler sequence corresponding to the selected sub-syndrome weight, among the plurality of scrambler sequences.

Provided is a variable resistance random-access memory for suppressing degradation of performance by recovering a memory cell that fails. A variable resistance random-access memory of the disclosure includes a memory array, a row selection circuit, a column selection circuit, a controller, an error checking and correcting (ECC) circuit, an error bit flag register, and an error bit address register. The memory array includes a plurality of memory cells. The column selection circuit includes a sense amplifier and a write driver/read bias circuit. The error bit flag register stores bits for indicating presence/absence of an error bit in a write operation. The error bit address register stores an address of the error bit. The controller recovers the error bit when a predetermined event occurs.

A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.

Systems, apparatuses, and methods related to host-based error correction are described. Error correction operations can be performed on a host computing system as opposed to on a memory system. For instance, data containing erroneous bits can be transferred from a memory system to a host computing system and error correction operations can be performed using circuitry resident on the host computing system. In an example, a method can include receiving, by a host computing system, data that comprises a plurality of uncorrected bits from a memory system coupleable to the host computing system, determining an acceptable error range for the data based at least in part on an application associated with the data, and performing, using error correction logic resident on the host computing system, an initial error correction operation on the data based at least in part on the acceptable error range.

Techniques regarding calibrating one or more quantum decoder algorithms are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can comprise a correlation inversion decoder component that can calibrate a quantum decoder algorithm for decoding a quantum error-correcting code by estimating hyperedge probabilities of a decoding hypergraph that are consistent with a syndrome dataset.

A method and apparatus for decoding in which a first failed decode operation is performed on raw bit values of a FEC block by a LDPC decoder. When the FEC block is determined to be a trapped block an updated LLR map is generated; the updated LLR map and either the raw bit values of the FEC block or a failed-decode-output-block from a previous failed decode operation on the trapped block are provided to the LDPC decoder; a decode operation of the LDPC decoder is performed using the updated LLR map on the bit values of the FEC block or the failed-decode-output-block from the previous failed decode operation; and the generating, the providing and the performing are repeated until the decode operation is successful or until a predetermined number of trapped-block-decoding iterations have been performed. When the decode operation is successful in decoding the FEC block the codeword is output.

Technology for reading reversible resistivity cells in a memory array when using a current-force read is disclosed. The memory cells are first read using a current-force referenced read. If the current-force referenced read is successful, then results of the current-force referenced read are returned. If the current-force referenced read is unsuccessful, then a current-force self-referenced read (SRR) is performed and results of the current-force SRR are returned. The current-force referenced read provides a very fast read of the memory cells and can be successful in most cases. The current-force SRR provides a more accurate read in the event that the current-force referenced read is not successful. Moreover, the current-force referenced read may use less power than the current-force SRR. In an aspect this mixed current-force read is used for MRAM cells, which are especially challenging to read.

Methods, systems, and devices for spare substitution in a memory system are described. A controller may, as part of a background operation, assign a spare bit to replace a bit of a code word and save an indication of the spare bit assignment in a memory array. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) within a memory medium that retains the code word. An MSR corresponding to the bit to be replaced may include a quantity of erroneous bits relative to a threshold. The controller may, during a read operation, identify the spare bit in a first portion of the code word, determine the bit to be replaced based on accessing the memory array, and replace the bit with the spare bit concurrently with receiving a second portion of the code word.

A system is provided to receive a request to write data to a storage device, wherein the data is associated with a file name and a file path. The system performs a hash function on an input based on the file name and the file path to obtain a hash value, wherein the hash function comprises a plurality of hash methods performed on the input. The system maps the hash value to a physical location in the storage device, and writes the data to the physical location in the storage device.