A test method and a test system are provided. The method includes that: first initial data is written into the storage module; ECC module encodes and generates first check data corresponding to first initial data based on first initial data, and writes first check data into the storage module; second initial data is written into a same address of the storage module; second initial data and first check data in the storage module are read. ECC module encodes and generates second check data corresponding to second initial data based on second initial data, and checks and corrects second initial data based on the first check data and the second check data; first read data of the memory is read, and whether a function of ECC module is abnormal is determined based on the first read data, the first read data is checked and corrected second initial data.

A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine, a refresh control circuit, a scrubbing control circuit and a control logic circuit. The refresh control circuit generates refresh row addresses for refreshing a memory region on memory cell rows in response to a first command received from a memory controller. The scrubbing control circuit counts the refresh row addresses and generates a scrubbing address for performing a scrubbing operation on a first memory cell row of the memory cell rows whenever the scrubbing control circuit counts N refresh row addresses of the refresh row addresses. The ECC engine reads first data corresponding to a first codeword, from at least one sub-page in the first memory cell row, corrects at least one error bit in the first codeword and writes back the corrected first codeword in a corresponding memory location.

Provided is a storage device including a memory device configured to store original data; and a controller configured to control the memory device, the controller including a first error correction circuit configured to correct an error of the original data, and a second error correction circuit configured to correct an error of the original data, a maximum number of correctable error bits of the second error correction circuit being greater than a maximum number of correctable error bits of the first error correction circuit, a mapping memory configured to store at least some of parity bits generated by the second error correction circuit and store an address of the memory device at which the original data is stored; and a control block configured to control the first error correction circuit, the second error correction circuit, and the mapping memory.

Memory with address-selectable data poisoning circuitry is disclosed herein. In one embodiment, a memory device comprises circuitry operably connected to a memory array. The circuitry can include memory row address registers and/or memory column address registers. Standard access commands or mode register write commands can be used to load a memory row address or a memory column address into the memory row address registers or the memory column address registers, respectively. During a read operation directed to a second memory row and/or column of the memory array, the circuitry can compare the second memory row to the first memory row and/or the second memory column to the first memory column, and can poison a data bit read from the memory array before the data bit is output from the memory device when the first and second memory row addresses match and/or when the first and second memory column addresses match.

Commutative coding in a geographically diverse data storage system is disclosed. Commutative coding can achieve a same result as more conventional hierarchical erasure coding of data, but can be more efficient. Commutative coding can employ Galois Field (GF) based bit-matrix operations. The bit-matrix operations can employ a reduced GF order in associated with expanding elements of input matrixes. A reduced GF order can perform matrix operations at a lower complexity, e.g., employing AND operations for a GF(2) in contrast to XOR operations for a GF(2.sup.w), where w=4, 8, 16, etc. In an aspect, commutative coding can comprise generating a second-tier coding fragment based on applying a second erasure coding scheme, via bit-matrix operations, to a first-tier encoded fragment, wherein the first-tier encoded fragment is based on an input data fragment and a first erasure coding scheme.

Various embodiments relate to a method for storing and reading data from a memory. Data words stored in the memory may be grouped, and word specific parity information and shared parity information is generated, and the shared parity information is distributed among the group of words. During reading of a word, if more errors are detected than can be corrected with word parity data, the shared parity data is retrieved and used to make the error corrections.

Countermeasures against fault injection attacks of a cryptographic integrated circuit, and more specifically laser fault injection attacks are provided. The invention consists in generating sequences of bits belonging to a set of allowed sequences, and storing these sequences on a set of Flip-Flops. Then the sequences stored on the Flip-Flops are checked and, if they do not belong to the allowed sequence, this is the sign that a fault injection attack occurred and caused a bit flip in one of the flip-flops. An alarm signal is then generated.

An apparatus includes an error correction component coupled to read recovery control circuitry. The error correction component can be configured to perform one or more initial error correction operations on codewords contained within a managed unit received thereto. The read recovery control circuitry can be configured to receive the error corrected codewords from the error correction component and determine whether codewords among the error corrected codewords contain an uncorrectable error. The read recovery control circuitry can be further configured to determine that a redundant array of independent disks (RAID) codeword included in the plurality of error corrected codewords contains the uncorrectable error, request that codewords among the error corrected codewords that contain the uncorrectable error are rewritten in response to the determination, and cause the plurality of error corrected codewords to be transferred to a host coupleable to the read recovery control circuitry.

A crossing frames encoding management method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: reading a tag swap information corresponding to a first physical group; encoding a first data; storing a first part of the encoded first data to at least one first physical unit corresponding to a first tag information in the first physical group; and storing a second part of the encoded first data to at least one second physical unit corresponding to a second tag information in the first physical group according to the tag swap information. The first tag information corresponds to a first crossing frames encoding group. The second tag information corresponds to a second crossing frames encoding group. The first crossing frames encoding group is different from the second crossing frames encoding group.

Disclosed are methods, systems, devices, circuits. and other implementations, including a method for error identification and correction that includes obtaining from a memory device coded input data, the coded input data previously encoded by multiplying a source data element by a pre-determined multiplier, and stored in the memory device, and performing a decoding operation on the coded input data obtained from the memory device, with the decoding operation including at least a modulo operation, to derive a resultant decoded data element and a remainder portion. The method further includes determining whether the coded input data includes a corrupted portion based on a value of the remainder portion.