The exemplary embodiments of the invention relates to fault tolerance of a cache memory which recovers an error occurred in the cache memory or reports an error. A cache memory may include a first layer cache configured to store data requested from a processor, together with a tag related to the data and parity check bits for detecting data error and tag error; a second layer cache configured to store data requested from the first layer cache, together with parity check bits and an error correction code(ECC) bit for detecting data error and tag error; and a fault tolerance unit configured to generate an error signal indicating whether the data error or tag error occurred in at least one of the first layer cache and the second layer cache is recoverable.

Systems, apparatuses, and methods for implementing masked fault detection for reliable low voltage cache operation are disclosed. A processor includes a cache that can operate at a relatively low voltage level to conserve power. However, at low voltage levels, the cache is more likely to suffer from bit errors. To mitigate the bit errors occurring in cache lines at low voltage levels, the cache employs a strategy to uncover masked faults during runtime accesses to data by actual software applications. For example, on the first read of a given cache line, the data of the given cache line is inverted and written back to the same data array entry. Also, the error correction bits are regenerated for the inverted data. On a second read of the given cache line, if the fault population of the given cache line changes, then the given cache line's error protection level is updated.

In described examples, a processor system includes a processor core that generates memory write requests, and a cache memory with a memory controller having a memory pipeline. The cache memory has cache lines of length L. The cache memory has a minimum write length that is less than a cache line length of the cache memory. The memory pipeline determines whether the data payload includes a first chunk and ECC syndrome that correspond to a partial write and are writable by a first cache write operation, and a second chunk and ECC syndrome that correspond to a full write operation that can be performed separately from the first cache write operation. The memory pipeline performs an RMW operation to store the first chunk and ECC syndrome in the cache memory, and performs the full write operation to store the second chunk and ECC syndrome in the cache memory.

The disclosure provides a semiconductor storage element which is provided with an error detection and correction circuit and, when an uncorrectable error occurs in the semiconductor storage element, capable of promptly transferring the occurrence to the outside, and provides a semiconductor storage device and a system-on-chip using the same. The semiconductor storage element includes a storage part storing data, an error detection and correction part detecting an error in the data stored in the storage part and correcting the error if possible, a monitoring part issuing an uncorrectable error signal when an uncorrectable error occurs in the error detection and correction part, and a terminal transmitting the uncorrectable error signal to the outside.

Disclosed herein is an apparatus and method for controlling level 0 caches, capable of delivering data to a processor without errors and storing error-free data in the caches even when soft errors occur in the processor and caches. The apparatus includes: a level 0 cache #0 connected to the load/store unit of a first processor; a level 0 cache #1 connected to the load/store unit of a second processor; and a fault detection and recovery unit for reading from and writing to tag memory, data memory, and valid bit memory of the level 0 cache #0 and the level 0 cache #1, performing the write-back and flush of the level 0 cache #0 and the level 0 cache #1 based on information stored therein, and instructing the load/store units of the first and second processors to stall a pipeline and to restart an instruction #n.

Providing space-efficient storage for dynamic random access memory (DRAM) cache tags is provided. In one aspect, a DRAM cache management circuit provides a plurality of cache entries, each of which contains a tag storage region, a data storage region, and an error protection region. The DRAM cache management circuit is configured to store data to be cached in the data storage region of each cache entry. The DRAM cache management circuit is also configured to use an error detection code (EDC) instead of an error correcting code (ECC), and to store a tag and the EDC for each cache entry in the error protection region of the cache entry. In this manner, the capacity of a DRAM cache can be increased by avoiding the need for the tag storage region for each cache entry, while still providing error detection for the cache entry.

An apparatus is described that includes memory controller logic circuitry to interface with a memory side cache of a multi-level system memory. The memory controller logic circuitry includes error tracking circuitry to track errors of cache line slots in the memory side cache. The memory controller logic circuitry also comprises faulty list circuitry to store identifiers of faulty cache line slots that are deemed to be excessively error prone. The memory controller logic circuitry is to declare a miss in the memory side cache for requests that map to cache line slots identified in the faulty list.

A supervisory hardware device in a processor core detects a flush instruction that, when executed, flushes content of one or more general purpose registers (GPRs) within the processor core. The content of the one or more GPRs is moved to a history buffer (HB) and an instruction sequencing queue (ISQ) within the processor core, where the content includes data, an instruction tag (iTag) that identifies an instruction that generated the data, and error correction code (ECC) bits for the data. In response to receiving a restore instruction, the supervisory hardware device error checks the data in the ISQ using the ECC bits stored in the ISQ. In response to detecting an error in the data in the ISQ, the supervisory hardware device sends the data and the ECC bits from the ISQ to an ECC scrubber to generate corrected data, which is restored into the one or more GPRs.

A system-in-package module with memory includes a non-memory chip, a substrate, and a memory chip. The non-memory chip has a first portion and a second portion. The substrate has a window and the substrate is electrically connected to the second portion of the non-memory chip. The memory chip is placed into the window of the substrate to electrically connect the first portion of the non-memory chip, and there is no direct metal connection between the memory chip and the substrate.

In one aspect, a pipelined ECC-protected cache access method and apparatus provides that during a normal operating mode, for a given cache transaction, a tag comparison action and a data RAM read are performed speculatively in a time during which an ECC calculation occurs. If a correctable error occurs, the tag comparison action and data RAM are repeated and an error mode is entered. Subsequent transactions are processed by performing the ECC calculation, without concurrent speculative actions, and a tag comparison and read are performed using only the tag data available after the ECC calculation. A reset to normal mode is effected by detecting a gap between transactions that is sufficient to avoid a conflict for use of tag comparison circuitry for an earlier transaction having a repeated tag comparison and a later transaction having a speculative tag comparison.