Systems and methods related to a memory system with a predictable read latency from media with a long write latency are described. An example memory system includes an array of tiles configured to store data corresponding to a cache line associated with a host. The memory system further includes control logic configured to, in response to a write command from a host, initiate writing of a first cache line to a first tile in a first row of the tiles, a second cache line to a second tile in a second row of the tiles, a third cache line to a third tile in a third row of the tiles, and a fourth cache line in a fourth row of the tiles. The control logic is configured to, in response to a read command from the host, initiate reading of data stored in an entire row of tiles.

A method for storing data includes determining, using a first match line, that a match word satisfies a first content addressable memory (CAM) word stored in a CAM array, wherein the CAM array is configured to store a second CAM word that matches the first CAM word. The method further includes determining that a first parity bit associated with the first CAM word matches a first parity of the first CAM word. The method further includes, in response to determining that the first parity bit associated with the first CAM word matches the first parity determining, using the first match line, a first random access memory (RAM) word stored in a RAM array and outputting the first RAM word.

A flash memory system and a flash memory thereof are provided. The flash memory device includes a NAND flash memory and a control circuit. The NAND flash memory chip includes a cache memory, a page buffer; and an NAND flash memory array. The NAND flash memory array includes a plurality of pages, wherein each page includes a plurality of sub-pages, each sub-page has a sub-page length. The cache memory is composed of a plurality of sub cache and each sub cache corresponds to different pages of the NAND flash memory array. The page buffer is composed of a plurality of sub-page buffers and each sub-page buffer corresponds to different pages of the NAND flash memory array. The control circuit is coupled to the host and the NAND flash memory, and performs an access operation in units of one sub-page.

A memory system includes: a normal memory area suitable for storing normal data; a security memory area suitable for storing security data; a first row hammer detection circuit suitable for sampling and counting a portion of rows that are activated in the normal memory area to select first rows that need to be refreshed; and a second row hammer detection circuit suitable for counting all rows that are activated in the security memory area to select second rows that need to be refreshed.

A method of correcting errors in a data storage system including a first node, a second node, and shared persistent storage (the first and second nodes being configured to process data storage requests) is provided. The method includes (a) reading cached pages from a first cache disposed within the first node, the cached pages being cached versions of respective persistent pages stored in the shared persistent storage; (b) in response to determining that one of the cached pages is corrupted, requesting that the second node return to the first node a corresponding remote page from a second cache disposed within the second node, the cached page and the remote page each caching a same persistent page of the shared persistent storage; and (c) in response to determining that the remote page received from the second node by the first node is not corrupted, correcting the cached page using the remote page.

An apparatus includes a central processing unit (CPU) core and a cache subsystem coupled to the CPU core. The cache subsystem includes a memory configured to store a line of data and an error correcting code (ECC) syndrome associated with the line of data, where the ECC syndrome is calculated based on the line of data and the ECC syndrome is a first type ECC. The cache subsystem also includes a controller configured to, in response to a request from a master configured to implement a second type ECC, the request being directed to the line of data, transform the first type ECC syndrome for the line of data to a second type ECC syndrome send a response to the master. The response includes the line of data and the second type ECC syndrome associated with the line of data.

In described examples, a processor system includes a processor core that generates memory write requests, a cache memory, and a memory pipeline of the cache memory. The memory pipeline has a holding buffer, an anchor stage, and an RMW pipeline. The anchor stage determines whether a data payload of a write request corresponds to a partial write. If so, the data payload is written to the holding buffer and conforming data is read from a corresponding cache memory address to merge with the data payload. The RMW pipeline has a merge stage and a syndrome generation stage. The merge stage merges the data payload in the holding buffer with the conforming data to make merged data. The syndrome generation stage generates an ECC syndrome using the merged data. The memory pipeline writes the data payload and ECC syndrome to the cache memory.

Techniques for caching data are provided that include receiving, by a caching system, a write memory command for a memory address, the write memory command associated with a first color tag, determining, by a first sub-cache of the caching system, that the memory address is not cached in the first sub-cache, determining, by second sub-cache of the caching system, that the memory address is not cached in the second sub-cache, storing first data associated with the first write memory command in a cache line of the second sub-cache, storing the first color tag in the second sub-cache, receiving a second write memory command for the cache line, the write memory command associated with a second color tag, merging the second color tag with the first color tag, storing the merged color tag, and evicting the cache line based on the merged color tag.

Systems and methods related to a memory system with a predictable read latency from media with a long write latency are described. An example memory system includes an array of tiles configured to store data corresponding to a cache line associated with a host. The memory system further includes control logic configured to, in response to a write command from a host, initiate writing of a first cache line to a first tile in a first row of the tiles, a second cache line to a second tile in a second row of the tiles, a third cache line to a third tile in a third row of the tiles, and a fourth cache line in a fourth row of the tiles. The control logic is configured to, in response to a read command from the host, initiate reading of data stored in an entire row of tiles.

A system and method for protecting memory instructions against faults are described. The system and method include converting the slave instructions to dummy operations, modifying memory arbiter to issue up to N master and N slave global/shared memory instructions per cycle, sending master memory requests to memory system, using slave requests for error checking, entering master requests to the GM/LM FIFO, storing slave requests in a register, and comparing the entered master requests with the stored slave requests.