Memories and methods for performing an atomic memory operation are disclosed, including a memory having a memory store, operation logic, and a command decoder. Operation logic can be configured to receive data and perform operations thereon in accordance with internal control signals. A command decoder can be configured to receive command packets having at least a memory command portion in which a memory command is provided and data configuration portion in which configuration information related to data associated with a command packet is provided. The command decoder is further configured to generate a command control signal based at least in part on the memory command and further configured to generate control signal based at least in part on the configuration information.

Provided is a method and apparatus for processing instructions using a processing-in-memory (PIM). A PIM management apparatus includes: a PIM directory comprising a reader-writer lock regarding a memory address that an instruction accesses; and a locality tracer configured to figure out locality regarding the memory address that the instruction accesses and determine whether or not an object that executes the instruction is a PIM.

In one example, a device includes a non-volatile memory divided into a plurality of selectable locations, wherein the selectable locations are grouped into a plurality of data lines; one or more processing units (PUs) coupled to the non-volatile memory, each of the PUs associated with a data line of the plurality of data lines, the one or more processing units comprising one or more reconfigurable PUs, the one or more PUs configured to: manipulate, based on one or more instruction sets, data in an associated data line to generate results that are stored in selectable locations of the associated data line reserved to store results of the manipulation; determine which of the instruction sets are most frequently used by the one or more PUs to manipulate data; and reconfigure the one or more reconfigurable PUs to manipulate data using the determined most frequently used instruction sets.

Embodiments relate to loading and storing of data. An aspect includes a method for transferring data in an active memory device that includes memory and a processing element. An instruction is fetched and decoded for execution by the processing element. Based on determining that the instruction is a gather instruction, the processing element determines a plurality of source addresses in the memory from which to gather data elements and a destination address in the memory. One or more gathered data elements are transferred from the source addresses to contiguous locations in the memory starting at the destination address. Based on determining that the instruction is a scatter instruction, a source address in the memory from which to read data elements at contiguous locations and one or more destination addresses in the memory to store the data elements at non-contiguous locations are determined, and the data elements are transferred.

A memory device and a method of operating the same. The memory device may include a memory block including a plurality of pages, and a control logic configured to include at least one register in which a plurality of program algorithms and a plurality of pieces of operation information are stored, select any one of the program algorithms in response to an address of a program target page, among the pages, and perform a program operation on the program target page based on the selected program algorithm and operation information corresponding to the selected program algorithm.

Memories and methods for performing an atomic memory operation are disclosed, including a memory having a memory store, operation logic, and a command decoder. Operation logic can be configured to receive data and perform operations thereon in accordance with internal control signals. A command decoder can be configured to receive command packets having at least a memory command portion in which a memory command is provided and data configuration portion in which configuration information related to data associated with a command packet is provided. The command decoder is further configured to generate a command control signal based at least in part on the memory command and further configured to generate control signal based at least in part on the configuration information.

In one example, a device includes a non-volatile memory divided into a plurality of selectable locations, wherein the selectable locations are grouped into a plurality of data lines; one or more processing units (PUs) coupled to the non-volatile memory, each of the PUs associated with a data line of the plurality of data lines, the one or more processing units comprising one or more reconfigurable PUs, the one or more PUs configured to: manipulate, based on one or more instruction sets, data in an associated data line to generate results that are stored in selectable locations of the associated data line reserved to store results of the manipulation; determine which of the instruction sets are most frequently used by the one or more PUs to manipulate data; and reconfigure the one or more reconfigurable PUs to manipulate data using the determined most frequently used instruction sets.

A memory cell that may be used for computation and processing array using the memory cell are capable to performing a logic operation including a boolean AND, a boolean OR, a boolean NAND or a boolean NOR. The memory cell may have a read port that has isolation circuits that isolate the data stored in the storage cell of the memory cell from the read bit line.

A memory cell that may be used for computation and processing array using the memory cell are capable to performing a logic operation including a boolean AND, a boolean OR, a boolean NAND or a boolean NOR. The memory cell may have a read port that has isolation circuits that isolate the data stored in the storage cell of the memory cell from the read bit line.

A memory cell that may be used for computation and processing array using the memory cell are capable to performing a logic operation including a boolean AND, a boolean OR, a boolean NAND or a boolean NOR. The memory cell may have a read port that has isolation circuits that isolate the data stored in the storage cell of the memory cell from the read bit line.