Patent classifications
G11B5/3906
Magnetoresistance effect element including a Heusler alloy ferromagnetic layer in contact with an intermediate layer
A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co.sub.2Fe.sub.αZ.sub.β is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, α and β satisfy 2.3≤α+β, α<β, and 0.5<α<1.9, and the substitution element is one or more elements selected from the group consisting of elements having a melting point higher than that of Fe among elements of Groups 4 to 10.
Reader with side shields decoupled from a top shield
A reader having a sensor stack and a top shield above the sensor stack. The top shield has an upper surface and a lower surface. The reader also includes at least one side shield below the top shield and adjacent to the sensor stack. The reader further includes a decoupling layer between the upper surface of the top shield and the at least one side shield. The decoupling layer is configured to decouple a first portion of the at least one side shield, proximate to the sensor stack, from at least a portion of the top shield.
Reader with a multi-layer synthetic ferrimagnet free layer
An apparatus includes a read sensor having a trilayer synthetic ferrimagnet free layer and at least one side shield positioned proximate to the trilayer synthetic ferrimagnet free layer. The at least one side shield provides a bias magnetic field in a first direction to bias the trilayer synthetic ferrimagnet free layer.
Multiple protective film on near-field transducer of heat-assisted magnetic recording device
A heat-assisted magnetic recording (HAMR) head has a protective multilayer confined to a window of the disk-facing surface of the slider that surrounds the near-field transducer (NFT) end and write pole end. The protective multilayer is made up of a first film of silicon nitride directly on and in contact with the NFT end and the write pole end and a second film of a metal oxide on and in contact with the silicon nitride film. The silicon nitride film is preferably formed by RIBD but is thin enough so that it does not contain any significant amount of other compounds. The metal oxide is preferably silicon dioxide, or alternatively an oxide of hafnium, tantalum, yttrium or zirconium, and together with the silicon nitride film provides a protective multilayer of sufficient thickness to be optically transparent to radiation and resistant to thermal oxidation.
Reader with wide synthetic antiferromagnetic structure optimized for high stability and low noise
A reader includes a bearing surface and a free layer having a front surface that forms a portion of the bearing surface. The reader also includes a synthetic antiferromagnetic (SAF) structure below the free layer, the SAF structure has a narrow portion with a front surface that forms a portion of the bearing surface and a wide portion behind the narrow portion. The reader further includes an antiferromagnetic (AFM) layer in contact with the wide portion of the SAF structure. The SAF structure is configured to prevent switching from one magnetic state to another magnetic state in the wide portion under thermal fluctuations.
MAGNETIC SENSOR
A magnetic sensor of the present invention has an elongate element portion having a magnetoresistive effect and a pair of elongate soft magnetic bodies that are arranged along the element portion on both sides of the element portion with regard to a short axis thereof. Each soft magnetic body includes a central portion that is adjacent to the element portion from one end to another end of the element portion with regard to a long axis direction thereof and a pair of end portions that protrude from the central portion in the long axis direction. A width of at least one of the end portions gradually decreases in a direction away from the central portion in at least a part of the end portions in the long axis direction thereof.
MAGNETIC HEAD AND MAGNETIC RECORDING DEVICE
According to one embodiment, a magnetic head includes first and second magnetic poles, and a stacked body provided between the first and second magnetic poles. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic pole and the first magnetic layer, a third magnetic layer provided between the first magnetic pole and the second magnetic layer, a first nonmagnetic layer provided between the second and first magnetic layers, a second nonmagnetic layer provided between the third and second magnetic layers, and a third nonmagnetic layer provided between the first magnetic pole and the third magnetic layer. The second magnetic layer includes first and second magnetic regions. The second magnetic region is between the second nonmagnetic layer and the first magnetic region. The first magnetic region includes a first element. The second magnetic region includes the first element, and a second element.
Magnetoresistance effect element including a crystallized Heusler alloy
A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
DUAL PURPOSE BOND PADS FOR HEAD SLIDERS AND METHODS OF PROCESSING A SLIDER
The present invention is directed to the fabrication of head sliders for use in hard disk drives, and in particular the provision and usage of electrical bond pads on the slider surface structure to accommodate needs of the fabrication process as well as slider operation within a disk drive.