A magnetic recording medium according to one embodiment includes a base film and a first nonmagnetic layer above the base film. The first nonmagnetic layer has first nonmagnetic particles. A second nonmagnetic layer is positioned above the first nonmagnetic layer, the second nonmagnetic layer having second nonmagnetic particles. A magnetic layer is positioned above the second nonmagnetic layer, the magnetic layer including a magnetic material.

Magnetic recording media including an interlayer configured to reduce lattice mismatch with adjacent layers of the media, such as an adjacent seed layer or an adjacent underlayer. In one example, an interlayer alloy is provided that includes tungsten (W) along with Cobalt (Co), Chromium (Cr), and Ruthenium (Ru). The atomic percentages of W and Ru within the interlayer are selected so that the amount lattice mismatch between the interlayer and its adjacent layers is below a preselected amount, such as below 3% as quantified by d-spacing. In some examples, the atomic percentage of Ru is greater than 25% and the atomic percentage of W is 2-10%. Methods of fabricating the magnetic recording media are also provided.

A magnetic recording medium with a reduced average grain diameter and reduced grain diameter dispersion is provided. A magnetic recording medium having a magnetic property (magnetic anisotropy energy) applicable as a magnetic recording medium is provided. It is a magnetic recording medium containing a substrate, a grain diameter control layer, a first seed layer, a second seed layer, and a magnetic recording layer containing an ordered alloy in this order, in which the second seed layer is composed of crystal grains having TiN as a main component, and a grain boundary material having at least one or more selected from the group consisting of metal oxides and carbon as a main component.

Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer. Described is an apparatus which comprises: a first electrode; a magnetic junction having a free magnet; and one or more layers of Jahn-Teller material adjacent to the first electrode and the free magnet of the magnetic junction.

The purpose of the present invention is to provide a perpendicular magnetic recording medium which uses an Ru seed layer having a (002)-oriented hcp structure, and has a magnetic recording layer including a (001)-oriented L1.sub.0 ordered alloy suitable to perpendicular magnetic recording. The magnetic recording medium of the present invention includes a substrate, a first seed layer containing Ru, a second seed layer containing ZnO, a third seed layer containing MgO, and a magnetic recording layer containing an ordered alloy, in this order, the first seed layer having the (002)-oriented hexagonal closest packed structure.

A magnetic recording medium includes: a substrate; a first underlayer; a second underlayer; and a magnetic layer including an alloy having a L1.sub.0 type crystal structure with a (001) orientation. The substrate, the first underlayer, the second underlayer, and the magnetic layer are stacked in this order. The first underlayer is a crystalline layer that includes Mo as a main component. The second underlayer is a crystalline layer that includes a material containing Mo as a main component and that includes an oxide. The content of the oxide in the second underlayer is in a range of from 2 mol % to 30 mol %. The oxide is an oxide of one or more kinds of elements selected from a group consisting of Cr, Mo, Nb, Ta, V, and W.

A magnetic recording medium includes: an elongated substrate having flexibility; a first layer, being provided on the substrate, containing Cr, Ni, and Fe, and having a face-centered cubic lattice structure with a (111) plane preferentially oriented so as to be parallel to a surface of the substrate; a second layer, being provided on the first layer, containing Co and O, having a ratio of an average atomic concentration of O to an average atomic concentration of Co of 1 or more, and having a column structure with an average particle diameter of 3 nm or more and 13 nm or less; a third layer, being provided on the second layer, and containing Ru; and a perpendicular recording layer, being provided on the third layer.

A method and system provide a magnetic recording media usable in a magnetic storage device. The magnetic recording media includes a substrate, at least one intermediate layer and a magnetic recording stack for storing magnetic data. The intermediate layer(s) include a majority phase having a first diffusion constant and a secondary phase having a second diffusion constant greater than the first diffusion constant. The magnetic recording stack residing on the intermediate layer such that the at least one intermediate layer is between the substrate and the magnetic recording stack.

A magnetic recording medium includes: a substrate; a first underlayer; a second underlayer; and a magnetic layer including an alloy having a L1.sub.0 type crystal structure with a (001) orientation. The substrate, the first underlayer the second underlayer, and the magnetic layer are stacked in this order. The first underlayer is a crystalline layer that includes W as a main component. The second underlayer is a crystalline layer that includes a material containing W as a main component and that includes an oxide. The content of the oxide in the second underlayer is in a range of from 2 mol % to 30 mol %. The oxide is an oxide of one or more kinds of elements selected from a group consisting of Cr, Mo, Nb, Ta, V, and W.

A magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer including an alloy having a L1.sub.0 type crystal structure whose plane orientation is (001). The substrate, the underlayer, and the magnetic layer are stacked in this order. The underlayer includes a first underlayer. The first underlayer is a crystalline layer that includes a material containing Al, Ag, Cu, W, or Mo as a main component element and includes an oxide of the main component element, a content of the oxide of the main component element in the first underlayer being in a range of from 2 mol % to 30 mol %.