G11B7/2433

Optical recording medium having a plurality of recording layers capable of suppressing off-track
09911451 · 2018-03-06 · ·

An optical recording medium includes a plurality of information signal layers on which information signals are to be optically recorded. Among the plurality of information signal layers, the information signal layer closest to the light-receiving surface has a reflectance of more than 4%.

Optical recording medium having a plurality of recording layers capable of suppressing off-track
09911451 · 2018-03-06 · ·

An optical recording medium includes a plurality of information signal layers on which information signals are to be optically recorded. Among the plurality of information signal layers, the information signal layer closest to the light-receiving surface has a reflectance of more than 4%.

OPTICAL RECORDING MEDIUM
20180047423 · 2018-02-15 ·

An optical recording medium includes a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer. The phase-change recording layer has an average composition represented by SbxInyMz, in which M is at least one of Mo, Ge, Mn, and Al, and x, y, and z are values in the ranges 0.70x0.92, 0.05y0.20, and 0.03z0.10, respectively, provided that x+y+z=1, the first dielectric layer includes a zirconium oxide-containing composite material or tantalum oxide, and the second dielectric layer includes a chromium oxide-containing composite material or silicon nitride.

System On Chip (SoC) Based On Neural Processor Or Microprocessor
20170140821 · 2017-05-18 ·

System on chips (SoCs) based a microprocessor or a neural processor (e.g., brain-inspired processor) electrically coupled with electronic memory devices and/or optically coupled with an optical memory device, along with embodiment(s) of building block (an element) of the microprocessor/neural processor, electronic memory device and optical memory device are disclosed. It should be noted that a microprocessor can be replaced by a graphical processor.

Method of writing to an optical data storage medium, method of reading from an optical data storage medium, and optical data storage medium

According to embodiments of the present invention, a method of writing to an optical data storage medium is provided. The method includes receiving a plurality of data elements, each data element having one of a plurality of values, wherein each value of the plurality of values is associated with a wavelength, and forming, for each data element, a nanostructure arrangement on the optical data storage medium, the nanostructure arrangement configured to reflect light of the wavelength associated with the value of the data element in response to a light irradiated on the optical data storage medium. According to further embodiments of the present invention, a method of reading from an optical data storage medium and an optical data storage medium are also provided.

Ultrafast quench based nonvolatile bistable device

The invention refers to an ultrafast quench based nonvolatile bistable device which consists of an active material on a passive or active substrate which changes its physical properties, after exposure to a sufficiently temporally short external perturbation causing an ultrafast quench. The perturbation can be from an external ultrashort laser pulse or ultrafast electrical pulse from an electrooptic device or any other generator of ultrashort pulses. This change of the materials properties can be detected as a change of optical properties or electrical resistance. The dielectric properties can be reverted back to their original state by the application of a heat pulse applied by an electrical heater within the device or an external laser.

Ultrafast quench based nonvolatile bistable device

The invention refers to an ultrafast quench based nonvolatile bistable device which consists of an active material on a passive or active substrate which changes its physical properties, after exposure to a sufficiently temporally short external perturbation causing an ultrafast quench. The perturbation can be from an external ultrashort laser pulse or ultrafast electrical pulse from an electrooptic device or any other generator of ultrashort pulses. This change of the materials properties can be detected as a change of optical properties or electrical resistance. The dielectric properties can be reverted back to their original state by the application of a heat pulse applied by an electrical heater within the device or an external laser.

System on chip (SoC) based on phase transition and/or phase change material
09558779 · 2017-01-31 ·

System on chips (SoCs) of a microprocessor electrically connected with electronic memory devices and/or optically connected with a optical memory device are disclosed along with various embodiments of building block of the microprocessor and the electronic memory devices, wherein the microprocessor can comprise digital unit and/or neural networks based unit.

System on chip (SoC) based on phase transition and/or phase change material
09558779 · 2017-01-31 ·

System on chips (SoCs) of a microprocessor electrically connected with electronic memory devices and/or optically connected with a optical memory device are disclosed along with various embodiments of building block of the microprocessor and the electronic memory devices, wherein the microprocessor can comprise digital unit and/or neural networks based unit.

OPTICAL RECORDING MEDIUM
20170011767 · 2017-01-12 ·

An optical recording medium includes a plurality of information signal layers on which information signals are to be optically recorded. Among the plurality of information signal layers, the information signal layer closest to the light-receiving surface has a reflectance of more than 4%.