The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array; each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor; the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor; and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line. According to the present disclosure, a polarized state of the ferroelectric capacitor in the memory cell is held or changed based on hysteresis characteristics of the ferroelectric capacitor, and the control unit is used to write data into or read data from the memory cell, which can implement non-destructive reading of data and longer endurance of a write operation.

A MRAM circuit structure is provided in the present invention, with the unit cell composed of three transistors in series and four MTJs, wherein the junction between first transistor and third transistor is first node, the junction between second transistor and third transistor is second node, and the other ends of first transistor and third transistor are connected to a common source line. First MTJ is connected to second MTJ in series to form a first MTJ pair that connecting to the first node, and third MTJ is connected to fourth MTJ in series to form a second MTJ pair that connecting to the second node.

An electronic device comprising a semiconductor memory is provided. The semiconductor memory includes a substrate including a cell region and a peripheral circuit region, the cell region including a first cell region and a second cell region, the first cell region being disposed closer to the peripheral circuit region than the second cell region; second lines disposed over the first lines and extending in a second direction crossing the first direction; memory cells positioned at intersections between the first lines and the second lines in the cell region; a first insulating layer positioned between the first lines, between the second line, or both, in the first cell region; and a second insulating layer positioned between the first lines and between the second lines in the second cell region. A dielectric constant of the first insulating layer is smaller than that of the second insulating layer.

Methods, systems, and devices for thin film transistor deck selection in a memory device are described. A memory device may include memory arrays arranged in a stack of decks formed over a substrate, and deck selection components distributed among the layers to leverage common substrate-based circuitry. For example, each memory array of the stack may include a set of digit lines of a corresponding deck, and deck selection circuitry operable to couple the set of digit lines with a column decoder that is shared among multiple decks. To access memory cells of a selected memory array on one deck, the deck selection circuitry corresponding to the memory array may each be activated, while the deck selection circuitry corresponding to a non-selected memory array on another deck may be deactivated. The deck selection circuitry, such as transistors, may leverage thin-film manufacturing techniques, such as various techniques for forming vertical transistors.

An electronic circuit may be operated based on two or more supply voltages ramped in accordance with a digital control scheme, the digital control scheme may include ramping a voltage value of a first output voltage generated via a first digitally controlled voltage converter from a first target voltage value to a third target voltage value such that the voltage value of the first output voltage matches a second target voltage value during a first ramp interval and the third target voltage value during a second ramp interval; and ramping a voltage value of a second output voltage generated via a second digitally controlled voltage converter from the first target voltage value to the second target voltage value such that the voltage value of the second output voltage matches the second target voltage value during the first ramp interval, and the second target voltage value during the second ramp interval.

Methods, systems, and devices for driver sharing between banks or portions of banks of memory devices are described. An apparatus may include a first bank and a second bank of memory cells and a word line driver configured to activate word lines. The word line driver may include a master word line driver and an address driver. In some examples, the master word line driver may be configured to generate a first signal to a first portion of the first bank or a second portion of the first bank as part of performing an access operation. In some examples, the master word line driver may be configured to generate a first signal for the first bank or the second bank as part of performing an access operation. The address driver configured to generate a second signal to a portion of the first bank or the second bank.

Provided is a 3D synapse device stack, a 3D stackable synapse array using the same, and a method for manufacturing the 3D synapse device stack. The 3D synapse device stack comprises: a channel hole provided along a vertical direction on a substrate; a semiconductor body formed by applying a semiconductor material to the surface of the channel hole; first insulating layers and sources alternately stacked on a first side surface of an outer circumferential surface of the semiconductor body; first insulating layers and drains alternately stacked on a second side surface of an outer circumferential surface of the semiconductor body; a source line electrode connected to and in contact with a plurality of sources; a drain line electrode connected to and in contact with the plurality of drains; a plurality of word lines alternately stacked with first insulating layers on a third side surface of an outer circumferential surface of the semiconductor body; and a plurality of insulator stacks positioned between the word lines and the semiconductor body, wherein the semiconductor body, the source, the drain, the insulator stack, and the word line positioned on the same layer on the surface of the channel hole constitute a synapse device or a part thereof. The synapse device stack may implement an AND-type or NOR-type synapse array.

Disclosed herein are related to a memory system and a method of operating the memory system. In one aspect, resistances of a first memory cell, a second memory cell, a third memory cell, and a fourth memory cell are individually set. In one aspect, the first memory cell and the second memory cell are coupled to each other in series between a first line and a second line, and the third memory cell and the fourth memory cell are coupled to each other in series between the second line and a third line. In one aspect, current through the second line according to a parallel resistance of i) a first series resistance of the first memory cell and the second memory cell, and ii) a second series resistance of the third memory cell and the fourth memory cell is sensed. According to the sensed current, multi-level data can be read.

A memory device including a reference voltage (V.sub.REF) generator and method for operating the same to improve memory sensing margin, and extend operational temperature range and life of the device are disclosed. Generally, the device further includes an array of non-volatile memory cells divided into a plurality of blocks, a sensing circuit coupled to the array to receive and compare memory signals therefrom to the V.sub.REF to read data from the cells. The Local reference voltage generator is configured to provide one of a number of reference voltages to the sensing circuit based on which of the blocks is being read. The array can be divided based on row and column addresses of cells in the blocks. Where the cells include 1T1C ferroelectric random access memory (F-RAM) cells, and the reference voltages are selected based on a lowest P-term or highest U-term of the cells in the block being read.

Methods, systems, and devices for driving word lines using sub word line drivers are described. A memory array may include a plurality of sub-arrays arranged with gaps in between. Word lines may be arranged across multiple sub-arrays and drive access transistors that are used to selectively access rows (e.g., rows of memory cells) within the sub-arrays. In some examples, signals applied to selection devices driving the word lines may be over-driven for a duration at or near the desired transitions of the word line, and some signals may be driven to a relatively high level for a duration around the high and low transitions of a global row line. Whether a signal is over driven or driven to a relatively high level may depend on the type or types of transistors used in each word line driver.