Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

A solid state drive includes DRAM logical flash and flash memory, in which system processor reads and writes only to the DRAM logical flash which minimizes writes to the flash memory. A method for operation of a solid state flash device includes writing, by a CPU, to a solid state drive by sending commands and data to DRAM logical flash using flash commands and formatting.

A solid state drive includes DRAM logical flash and flash memory, in which system processor reads and writes only to the DRAM logical flash which minimizes writes to the flash memory. A method for operation of a solid state flash device includes writing, by a CPU, to a solid state drive by sending commands and data to DRAM logical flash using flash commands and formatting.

The present invention provides a semiconductor module, a semiconductor member, and a method for manufacturing the same that make it possible to improve heat dissipation efficiency. This semiconductor module 1 comprises: a power supply unit 40; a RAM unit 50, which is a RAM module having a facing surface disposed so as to face an exposed surface of a logic chip 20 and an exposed surface of the power supply unit 40, the RAM module being disposed across some of a plurality of logic chip signal terminals 22 and some of a plurality of power supply unit power supply terminals 41; and a support substrate 10 having a power feeding circuit capable of feeding electrical power to the logic chip and to the power supply unit 40, one main surface of the support substrate 10 being disposed adjacent to a heat dissipation surface of the RAM unit 50, which is the surface of the RAM unit 50 opposite the facing surface. The support substrate 10 is electrically connected, using the power feeding circuit 12, to at least some of logic chip power supply terminals 21 and the other power supply unit power supply terminals 41. The support substrate 10 has, at positions overlapping the RAM unit 50, heat dissipation vias 11 that penetrate in the thickness direction and come into contact with the heat dissipation surface of the RAM unit 50.

A Dual In-Line Memory Module (DIMM) includes a plurality of memory devices mounted on a circuit board of the DIMM. The memory devices are arranged to be accessed via at least two memory channels. The DIMM further includes an array of surface contact connections. Each surface contact connection is configured to be engaged with an associated contact element of a z-axis compression connector. The array of surface contact connections are arranged to conduct signals for the memory channels. The memory devices are placed upon the memory circuit board in an array of X rows of memory devices and Y columns of memory devices, where X and Y are integers. When the DIMM has a first number of the memory devices A=X.sub.1×Y.sub.1 that is less than when the DIMM has a second number of memory devices B=X.sub.2×Y.sub.2, then either X.sub.1 is less than X.sub.2, or Y.sub.1 is less than Y.sub.2.

A Dual In-Line Memory Module (DIMM) includes a plurality of memory devices mounted on a circuit board of the DIMM. The memory devices are arranged to be accessed via at least two memory channels. The DIMM further includes an array of surface contact connections. Each surface contact connection is configured to be engaged with an associated contact element of a z-axis compression connector. The array of surface contact connections are arranged to conduct signals for the memory channels. The memory devices are placed upon the memory circuit board in an array of X rows of memory devices and Y columns of memory devices, where X and Y are integers. When the DIMM has a first number of the memory devices A=X.sub.1×Y.sub.1 that is less than when the DIMM has a second number of memory devices B=X.sub.2×Y.sub.2, then either X.sub.1 is less than X.sub.2, or Y.sub.1 is less than Y.sub.2.

Methods, systems, and devices for compensating for kickback noise are described. A regulator may include an input circuit, a bias circuit, and an enable circuit. The regulator may be configured so that the enable circuit is positioned between the input circuit and the bias circuit. A balance resistor may be included in a path between an input of the regulator and a gate of a bias transistor included in the bias transistor. A size of the balance resistor may be based on an amount of charge drawn by the bias transistor during an activation event. Dimensions of the bias transistor may be modified based on an amount of charge drawn by the bias transistor during an activation event.

Methods, systems, and devices for compensating for kickback noise are described. A regulator may include an input circuit, a bias circuit, and an enable circuit. The regulator may be configured so that the enable circuit is positioned between the input circuit and the bias circuit. A balance resistor may be included in a path between an input of the regulator and a gate of a bias transistor included in the bias transistor. A size of the balance resistor may be based on an amount of charge drawn by the bias transistor during an activation event. Dimensions of the bias transistor may be modified based on an amount of charge drawn by the bias transistor during an activation event.

Methods, systems, and devices for voltage drop mitigation techniques for memory devices are described. A memory device may include an array of memory cells, a conductive line, a pull-up circuit, and an output circuit. The conductive line may be configured to convey a first voltage for performing an operation with the array of memory cells. The pull-up circuit may be configured to couple the conductive line with a voltage source during at least a portion of a duration in which the operation is performed based on a first signal that enables applying a current to the array of memory cells as part of the operation. The output circuit may be configured to output a second signal to deactivate the pull-up circuit before the operation is complete. Outputting the second signal may be based on the first signal and a difference between the first voltage and a reference voltage.