A memory system includes a management-information restoring unit. The management-information restoring unit determines whether a short break has occurred referring to a pre-log or a post-log in a NAND memory. The management-information restoring unit determines that a short break has occurred when the pre-log or the post-log is present in the NAND memory. In that case, the management-information restoring unit determines timing of occurrence of the short break, and, after selecting a pre-log or a post-log used for restoration, performs restoration of the management information reflecting these logs on a snapshot. Thereafter, the management-information restoring unit applies recovery processing to all write-once blocks in the NAND memory, takes the snapshot again, and opens the snapshot and the logs in the past.

A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.

A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to identify a most recently written portion of the set of non-volatile memory cells and to compare an error rate of data stored in the most recently written portion with a reference error rate from a reference portion of the set of non-volatile memory cells to determine whether the most recently written portion is fully written or partially written.

A non-volatile memory device uses physical authentication to enable the secure programming of a boot partition, when the boot partition is write protected. This physical authentication can also be used to enable other features/functions.

According to one embodiment, a semiconductor device includes a non-volatile memory, a temperature measurement circuit that measures a temperature of the non-volatile memory, and a controller. The controller also writes information about the temperature which is measured by the temperature measurement circuit in the non-volatile memory together when writing data in the non-volatile memory. Further, the controller performs write-back processing of writing data, which is written at a temperature in a rewriting temperature range, back when the temperature measured by the temperature measurement circuit is not in the rewriting temperature range.

One embodiment facilitates a high-priority read. During operation, the system receives, by a controller module of a storage device, a first request to write first data to a non-volatile memory of the storage device. The system commences a write operation to write the first data to the non-volatile memory. In response to detecting a second request to read second data from the non-volatile memory, the system: suspends the write operation; reads the second data from the non-volatile memory; and resumes the suspended write operation.

A data overwriting device includes an overwriting unit that overwrites a part of data stored in a memory, the part in which a difference is generated; a first writing unit that writes first information in a first storage unit when a data overwriting process is completed by the overwriting unit; a second writing unit that writes second information in a second storage unit when confirming that the part of the data overwritten by the overwriting unit includes no error; and a deleting unit that clears the first storage unit storing the first information and the second storage unit storing the second information before the overwriting unit starts executing the data overwriting process.

A semiconductor device includes first and second memory cells, a first word line, and a first and second bit lines, and a row control circuit. The first memory cell has a first gate electrode and a first channel having one end and another end. The second memory cell has a second gate electrode and a second channel having one end and another end. The first word line electrically connected with each of the first gate electrode and the second gate electrode. The first and second bit lines electrically connected with the first and second channels, respectively. When a threshold voltage of each of the first and second memory cells are caused to be shifted, the semiconductor device causes a first voltage between the first gate electrode and the first channel and a second voltage between the second gate electrode and the second channel to be differentiated.

A self-detecting and data rewriting system and application method thereof, mainly comprising: a computer with a data protecting unit installed internally that stores and records at least the computer's boot data and set hotkeys, and an external protection device that has an internal firmware collocated with a data storage unit, the external protection device includes an external connector to be connected with the computer to form information connection, so that the data storage unit is able to update automatically after comparing with and referring to the data protecting unit, to obtain the information of the booting and set hotkeys from the computer and stored and recorded in the external protection device. Thereby, when the computer fails to operate normally, use the external protection device to be connected to the computer so that the computer operating system can be restored and resumed with normal operation.

A memory system includes a management-information restoring unit. The management-information restoring unit determines whether a short break has occurred referring to a pre-log or a post-log in a NAND memory. The management-information restoring unit determines that a short break has occurred when the pre-log or the post-log is present in the NAND memory. In that case, the management-information restoring unit determines timing of occurrence of the short break, and, after selecting a pre-log or a post-log used for restoration, performs restoration of the management information reflecting these logs on a snapshot. Thereafter, the management-information restoring unit applies recovery processing to all write-once blocks in the NAND memory, takes the snapshot again, and opens the snapshot and the logs in the past.