Patent classifications
G
PHYSICS
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G11
INFORMATION STORAGE
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G11C
STATIC STORES
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16/00
Erasable programmable read-only memories
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G11C16/02
electrically programmable
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G11C16/06
Auxiliary circuits, e.g. for writing into memory
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G11C16/34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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G11C16/349
Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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G11C16/3495
Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
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