A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.

A memory apparatus includes an address decoding circuit configured to output a test redundancy address based on an address that is transmitted from a memory controller; and a redundancy address check circuit configured to determine whether the test redundancy address is replacing a failed address, in order to perform an ECC test operation by using the test redundancy address.

An example method may be used to perform concurrent compensation in a memory array. The example method may include decoding a prime row address corresponding to a respective prime memory cell row of a first row section of a memory array mat to provide a prime section signal, and in response to a determination that the prime row address matches a defective prime row address, providing a redundant section signal corresponding to a respective redundant memory cell row of a second row section of the memory array mat. In response to the prime section signal, initiating a first threshold voltage compensation operation on first sensing circuitry coupled to the first row section; and in response to the redundant section signal indicating a defective prime row, initiating a second threshold voltage compensation operation on second sensing circuitry coupled to the second row section concurrent with the first threshold voltage compensation operation.

Conventional methods using signal test patterns to identify wiring errors are difficult to apply to interfaces encoding information as signal state transitions rather than directly as signal states. A system utilizing excitation of wires with selected transition coded patterns and evaluation of received results is described to identify failed wire connections. This approach may be advantageously used to provide fault detection and redundant path selection in systems incorporating stacked chip interconnections using Through Silicon Vias.

This application provides a test circuit. The circuit includes: an input terminal, a processing circuit, and an output terminal. The input terminal receives an input signal. The input signal includes a test command for indicating a test target circuit module and an address of the target circuit module. The processing circuit responds to the test command and the target. The address of the circuit module determines the test mode signal, the test mode signal carries the test type, the test mode signal is used to trigger the target circuit module to perform the test corresponding to the test type, and the output terminal sends the test mode signal to the target circuit module according to the address of the target circuit module. Thus, the test mode signal can be accurately transmitted to different circuit modules in the memory chip.

A chip having a debug function includes functional circuitries, a selector circuitry, a data reconstruction circuitry, and a switching circuitry. Each functional circuitry includes a decoder circuit that stores a corresponding set of debug signals and outputs a corresponding debug signal in the corresponding set of debug signals to be a corresponding signal in first signals according to a corresponding address signal in address signals. The selector circuitry selects second signals from the first signals according to the address signals. The data reconstruction circuitry selects first data from the second signals according to split signals and outputs the same to be debug data. Each first data is partial data of a corresponding signal in the second signals. The switching circuitry determines whether to output the debug data or at least one output signal associated with the functional circuitries via output ports according to switching signals.

A memory-testing circuit configured to perform a test of reference bits in a memory. In a read operation, outputs of data bit columns are compared with one or more reference bit columns. The memory-testing circuit comprises: a test controller and association adjustment circuitry configurable by the test controller to associate another one or more reference bit columns or one or more data bit columns with the data bit columns in the read operation. The test controller can determine whether the original one or more reference bit columns have a defect based on results from the two different association.

A storage device includes a memory, a write circuit, a read circuit, and a debug information register. The memory includes a data area and a redundant area that corresponds to the data area. The write circuit writes first data specified in a write command to the data area, and first information about a transmission source which has transmitted the write command, to the redundant area. The read circuit reads the first data as second data from the data area, and reads the first information as second information from the redundant area, in response to a read command. The debug information register stores the second information read by the read circuit.

A main memory includes unit memory regions, a redundancy memory region for replacing one or more of the unit memory regions, an address wrapper for generating an address increase/decrease control signal in first and second address wrapping modes, a column decoder for sequentially selecting memory cells in a faulty memory region where a fault has occurred, among the unit memory regions in the first address wrapping mode, and sequentially selecting redundancy memory cells in the redundancy memory region in the second address wrapping mode, based on a column address and the address increase/decrease control signal, and a data input/output circuit for outputting data read from the faulty memory region as backup data to a temporary memory in the first address wrapping mode, and outputting the backup data as restoration data to the redundancy memory region in the second address wrapping mode.

Semiconductor memory testing devices and methods are disclosed. In one respect, a device is disclosed that includes a first memory cell array having a first bit-line and a plurality of first memory cells connected to the first bit-line; a second memory cell array having a second bit-line and a plurality of second memory cells connected to the second bit-line, the number of second memory cells being smaller than that of the first memory cells; a sense amplifier connected to the first bit-line and a first end of the second bit-line; a word decoder configured to operate the second memory cells responsive to a first test signal; and a transistor coupled to a second end of the second bit-line and operated by a second test signal.