A logic circuit is provided including at least two input cells and a sense circuit. The input cells are connected to a common result line. Further, the input cells are operable for influencing an electrical quantity at the result line. The sense circuit is connected to the result line, and is adapted to output a discrete value out of more than two possible values based on the electrical quantity.

A memory transparent in-system built-in self-test may include performing in-system testing on subsets of memory cells over one or more test intervals of one or more test sessions. A test interval may include copying contents of a subset of memory cells to a register(s), writing test data (e.g., a segment of a pattern) to the subset of memory cells, reading back contents of the subset of memory cells, and restoring the content from the register(s) to the subset of memory cells. In-system testing may be performed on overlapping sets of memory cells. In-system testing may be performed on successive subsets of memory cells within a row (i.e., fast column addressing) and/or within a column (fast column addressing). In-system testing may be performed on sets of m blocks of memory cells during respective test intervals. The number of m blocks tested per interval may be configurable/selectable.

A logic circuit is provided including at least two input cells and a sense circuit. The input cells are connected to a common result line. Further, the input cells are operable for influencing an electrical quantity at the result line. The sense circuit is connected to the result line, and is adapted to output a discrete value out of more than two possible values based on the electrical quantity.

Methods, systems, and devices for operating a memory array with variable page sizes are described. The page size may be dynamically changed, and multiple rows of the memory array may be accessed in parallel to create the desired page size. A memory bank of the array may contain multiple memory sections, and each memory section may have its own set of sense components (e.g., sense amplifiers) to read or program the memory cells. Multiple memory sections may thus be accessed in parallel to create a memory page from multiple rows of memory cells. The addressing scheme may be modified based on the page size. The logic row address may identify the memory sections to be accessed in parallel. The memory sections may also be linked and accessing a row in one section may automatically access a row in a second memory section.

Apparatuses, systems, methods, and computer program products are disclosed for changing storage parameters. An integrated circuit (IC) memory element receives a command to change a value of a parameter associated with the IC memory element. A parameter includes a setting for one or more storage operations of an IC memory element. An IC memory element receives one or more data sets with a command. A data set includes an identifier associated with a parameter to be changed and a new value for the parameter. Each of one or more data sets is received at a same data rate as a command. An IC memory element writes, for each of one or more data sets, a new value for a parameter to a storage location associated with the parameter.

Methods, systems, and devices for address fault detection are described. In some examples, a memory device may receive a command (e.g., a write command) and data, and may generate a set of parity bits based on an address of the command and the data. The data and the set of parity bits may be stored to respective portions of a memory array. In some examples, the memory device may receive a command (e.g., a read command) for the data. The memory device may read the data and may generate a set of parity bits (e.g., a second set of parity bits) based on an address of the command and the read data. The sets of parity bits may be compared to determine whether an error associated with the data exists, an error associated with an address path of the memory exists, or both.

A logic circuit is provided including at least two input cells and a sense circuit. The input cells are connected to a common result line. Further, the input cells are operable for influencing an electrical quantity at the result line. The sense circuit is connected to the result line, and is adapted to output a discrete value out of more than two possible values based on the electrical quantity.

Methods, systems, and devices for operating a memory array with variable page sizes are described. The page size may be dynamically changed, and multiple rows of the memory array may be accessed in parallel to create the desired page size. A memory bank of the array may contain multiple memory sections, and each memory section may have its own set of sense components (e.g., sense amplifiers) to read or program the memory cells. Multiple memory sections may thus be accessed in parallel to create a memory page from multiple rows of memory cells. The addressing scheme may be modified based on the page size. The logic row address may identify the memory sections to be accessed in parallel. The memory sections may also be linked and accessing a row in one section may automatically access a row in a second memory section.

A system and method for detection and correction of single-bit errors in a multi-core processing resource (MCPR) of an avionics processing system includes a RAM EDAC testing module called by the MCPR health monitor to access EDAC registers of a system-on-chip module coupled to the MCPR and access memory addresses passed by the MCPR health monitor to detect single-bit errors. Single-bit errors detected in memory mapped to the hypervisor are corrected by the RAM EDAC testing module. Single-bit errors detected in memory associated with a partition or core of the MCPR are corrected by the health monitor running on the particular partition or core with which the memory portion is associated. Single-bit errors may be detected in unmapped memory associated with a partition or core by accessing the unmapped memory via a temporary TLB entry.

A semiconductor memory device includes data path circuits and control circuits alternately disposed along a first direction. A first metal layer is disposed on the data path circuits and control circuits. Each of data path circuits includes a memory cells disposed in rows along the first direction and columns along a second direction crossing the first direction and a read/write circuit disposed at an end of the columns of memory cells. At least one pair of adjacent columns of memory cells has an electrical separation between the gate polysilicon layer the pair of adjacent memory cell columnsthat is, gate conductor layer of the adjacent memory columns are electrically distinct. A word line in the first metal layer is segmented along the first direction into separately addressable portions.