Patent classifications
G11C29/26
METHODS AND DEVICES FOR TESTING MULTIPLE MEMORY CONFIGURATIONS
Methods, devices, and systems for testing a number of combinations of memory in a computer system. A modular memory device is installed in a memory channel in communication with a processor. The modular memory device includes a number of memory storage devices. The number of memory storage devices include a number of pins. For each of a number of subsets of the number of memory storage devices, a subset of the number of memory storage devices is selected, each pin of a subset of the number of pins which do not correspond to the subset of the number of memory storage devices is configured with a termination impedance, and the subset of the number of memory storage devices is tested.
SEMICONDUCTOR MEMORY DEVICE AND PARTIAL RESCUE METHOD THEREOF
A semiconductor memory device includes a plurality of planes defined in a plurality of chip regions; and a rescue circuit configured to disable a failed plane and enable a normal plane from among the plurality of planes, wherein the semiconductor memory device operates with only normal planes that are enabled.
MULTIPLE-NAME-SPACE TEST SYSTEMS AND METHODS
Presented embodiments facilitate efficient and effective flexible implementation of different types of testing procedures in a test system. In one embodiment, a multiple-name-space testing system comprises a load board, testing electronics, and a namespace testing tracker. The load board is configured to couple with a plurality of devices under test (DUTs). The testing electronics are configured to test the plurality of DUTs, wherein the testing electronics are coupled to the load board. The controller is configured to direct testing of multiple-name-spaces across the plurality of DUTs at least in part in parallel. The controller can be coupled to the testing electronics. The namespace testing tracker is configured to track testing of the plurality of DUTs, including the testing of the multiple-name-spaces across the plurality of DUTs at least in part in parallel. In one embodiment, the DUTs are NVMe SSD devices.
Electronic circuit
An electronic circuit includes an interface, a read-only memory in which encrypted data are stored, and cryptographic circuitry coupled to the interface. In operation, the cryptographic circuitry uses a decryption key received via the interface to decrypt the encrypted data. The electronic circuit performs one or more operations using the decrypted data.
MEMORY MANAGEMENT DEVICE, SYSTEM AND METHOD
A memory management circuit stores information indicative of reliability-types of regions of a memory array. The memory management circuitry responds to a request to allocate memory in the memory array to a process by determining a request type associated with the request to allocate memory. Memory of the memory array is allocated to the process based on the request type associated with the request to allocate memory and the stored information indicative of reliability-types of regions of the memory array. The memory array may be a shared memory array. The memory array may be organized into rows and columns, and the regions of the memory array may be the rows of the memory array.
MEMORY MANAGEMENT DEVICE, SYSTEM AND METHOD
A memory management circuit stores information indicative of reliability-types of regions of a memory array. The memory management circuitry responds to a request to allocate memory in the memory array to a process by determining a request type associated with the request to allocate memory. Memory of the memory array is allocated to the process based on the request type associated with the request to allocate memory and the stored information indicative of reliability-types of regions of the memory array. The memory array may be a shared memory array. The memory array may be organized into rows and columns, and the regions of the memory array may be the rows of the memory array.
MEMORY DEVICE CAPABLE OF OUTPUTTING FAIL DATA IN PARALLEL BIT TEST AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE
A memory device includes a memory cell array and a test controller. The memory cell array includes a plurality of memory cells, where the memory cell array is divided into multiple regions. The test controller is configured to perform a parallel bit test (PBT) on the plurality of memory cells, where the test controller selects fail data including a fail data bit among internal data output from the multiple regions during the PBT, and outputs the fail data via a data input/output signal line to the outside of the memory device.
BUILT-IN MEMORY REPAIR WITH REPAIR CODE COMPRESSION
In a described example, an integrated circuit (IC) includes a repairable memory system. A repair controller is coupled to the repairable memory system. The repair controller includes compression logic configured to encode memory repair code data for a respective instance of the repairable memory system and provide compressed repair data. A non-volatile memory controller is coupled to the repair controller and to non-volatile memory. The non-volatile memory controller is configured to transfer the compressed repair data to the non-volatile memory for storage.
Method of testing memory device employing limited number of test pins and memory device utilizing same
A memory device includes a plurality of pins, a controller die coupled to the isolation pin, and a memory die. The plurality of pins include an isolation pin, a test mode select pin configured to switch an operation mode of the memory die, a test clock pin configured to receive a test clock, and a test data pin configured to perform a data transmission. The controller die is coupled to the isolation pin. The memory die is coupled to the test mode select pin, the test clock pin, and the test data pin.
Memory device capable of outputting fail data in parallel bit test and memory system including the memory device
A memory device includes a memory cell array and a test controller. The memory cell array includes a plurality of memory cells, where the memory cell array is divided into multiple regions. The test controller is configured to perform a parallel bit test (PBT) on the plurality of memory cells, where the test controller selects fail data including a fail data bit among internal data output from the multiple regions during the PBT, and outputs the fail data via a data input/output signal line to the outside of the memory device.