Systems and methods may provide for identifying unencrypted data including a plurality of bits, wherein the unencrypted data may be encrypted and stored in memory. In addition, a determination may be made as to whether the unencrypted data includes a random distribution of the plurality of bits. An integrity action may be implemented, for example, when the unencrypted data includes a random distribution of the plurality of bits.

Methods, systems, and apparatuses for storing operational information related to operation of a non-volatile array are described. For example, the operational information may be stored in a in a subarray of a memory array for use in analyzing errors in the operation of memory array. In some examples, an array driver may be located between a command decoder and a memory array. The array driver may receive a signal pattern used to execute an access instruction for accessing non-volatile memory cells of a memory array and may access the first set of non-volatile memory cells according to the signal pattern. The array driver may also store the access instruction (e.g., the binary representation of the access instruction) at a non-volatile subarray of the memory array.

A system and method for testing performance of a plurality of memory modules includes generating a clock signal at a set frequency and sending the clock signal to the memory modules. An initial data pattern is sent to an input of a first memory module. A subsequent data pattern received from the first memory module is delayed by a predetermined delay time and sent to an input of a last memory module. The initial data pattern and the subsequent data pattern received from the output of the last memory module are compared and a performance of the memory modules is also calculated.

A semiconductor device including an SRAM capable of sensing a defective memory cell that does not satisfy desired characteristics is provided. The semiconductor device includes a memory cell, a bit line pair being coupled to the memory cell and having a voltage changed towards a power-supply voltage and a ground voltage in accordance with data of the memory cell in a read mode, and a specifying circuit for specifying a bit line out of the bit line pair. In the semiconductor device, a wiring capacitance is coupled to the bit line specified by the specifying circuit and a voltage of the specified bit line is set to a voltage between a power voltage and a ground voltage in a test mode.

A defect detecting method for a Word Line (WL) driving circuit includes: m WLs correspondingly connected to m different WL driving circuits are selected from a memory cell array and corresponding WL driving circuit arrays to serve as m WLs to be tested, one of which is set as a first WL and the remaining m-1 ones are set as second WLs; first potential is written into memory cells correspondingly connected to the m WLs to be tested; second potential is written into memory cells correspondingly connected to the first WL; real-time potentials of the memory cells connected to respective second WLs are sequentially read, and when difference value between the real-time potential of one target memory cell and the first potential is greater than first pre-set value, it is determined that the WL driving circuit connected to the second WL corresponding to the target memory cell has a defect.

A method for dynamically handling the failure of the static random-access memory (SRAM) dynamic failure handling system using a cyclic redundancy check (CRC) includes obtaining a write data; determining a write address; storing the write data at the write address of a frame memory which is composed of the SRAM and includes a real address area and a spare address area which are distinguished from each other; storing, in response to the write address, a write cyclic redundancy check (CRC) generated by performing a CRC calculation on the write data; determining a read address; reading a read data from the read address of the frame memory; determining whether, based on the A CRC remainder W_CRC corresponding to the read address and the read data, a CRC error occurs, and generating an error flag when the CRC error occurs; determining a fault address based on the error flag; and mapping the fault address to one of non-fault spare addresses of the spare address area when the fault address is an address of the real address area.

Methods, systems, and devices for pattern generation for multi-channel memory array are described. A device may include a memory array and a circuit for testing the memory array. The memory array may include a first set of memory cells and a second set of memory cells, the first set of memory cells coupled with a first channel and the second set of memory cells coupled with a second channel. The circuit may be coupled with the memory array and may include a pattern generator and an output response analyzer. The pattern generator may be configured to selectively output a single pattern when operating in a single-pattern mode or a plurality of patterns when operating in a multi-pattern mode. The output response analyzer configured to determine whether the memory array includes one or more errors based at least in part on a pattern output by the pattern generator.

An integrated circuit (IC) chip includes a plurality of interlayer channels; at least one data pad; an identification (ID) generation circuit suitable for generating a chip ID signal by decoding a command/address signal; a first transmission circuit suitable for transferring a plurality of internal data pieces to a transmission path by aligning a plurality of interlayer data pieces respectively transferred from the plurality of interlayer channels according to a plurality of strobe signals while selectively inverting the plurality of interlayer data pieces according to the chip ID signal; and a second transmission circuit suitable for transferring the plurality of internal data pieces from the transmission path to the at least one data pad.

A test pattern generator includes a random command address generator suitable for generating N combinations, each combination of a command and an address, where N is an integer greater than or equal to 2; an address converter suitable for converting the N combinations into an N-dimensional address; a history storage circuit which is accessed based on the N-dimensional address; and a controller suitable for classifying the N combinations as issue targets, when an area in the history storage circuit, which is accessed based on the N-dimensional address, indicates a value of no hit.

A semiconductor device is provided, which contains a memory bank including M primary word lines and R replacement word lines, a row/column decoder, and an array of redundancy fuse elements. A sorted primary failed bit count list is generated in a descending order for the bit fail counts per word line. A sorted replacement failed bit count list is generated in an ascending order of the M primary word lines in an ascending order. The primary word lines are replaced with the replacement word lines from top to bottom on the lists until a primary failed bit count equals a replacement failed bit count or until all of the replacement word lines are used up. Optionally, the sorted primary failed bit count list may be re-sorted in an ascending or descending order of the word line address prior to the replacement process.