An integrated circuit (IC) having a memory for storing data also has a memory built in self-test (MBIST) unit coupled to the memory for testing an operation of the memory. A test interface provides test data. Flip-flops of the IC are connected together into at least one serial scan chain. The test interface unit receives test data including MBIST configuration data. The MBIST unit, in a first mode, tests the memory based on the MBIST configuration data at least partly in parallel with a scan test using the scan chain. Thus, both the memory and the logic circuitry can be tested in parallel.

An integrated circuit (IC) having a memory for storing data also has a memory built in self-test (MBIST) unit coupled to the memory for testing an operation of the memory. A test interface provides test data. Flip-flops of the IC are connected together into at least one serial scan chain. The test interface unit receives test data including MBIST configuration data. The MBIST unit, in a first mode, tests the memory based on the MBIST configuration data at least partly in parallel with a scan test using the scan chain. Thus, both the memory and the logic circuitry can be tested in parallel.

A Fail Bit (FB) repair method includes: a bank to be repaired of a chip to be repaired is determined; first repair processing is performed on a first FB using a redundant circuit; a bit position of a second FB in each target repair bank is determined, and second repair processing is performed on the second FB; an unrepaired FB in each target repair bank is determined, and candidate repair combinations of the unrepaired FBs and a candidate combination count are determined; and if the candidate combination count is greater than a combination count threshold, a target repair position is determined, and repair processing is performed on the target repair position using a Redundant Word-Line (RWL), the target repair position being a position of an FB that maximally reduces the candidate combination count after repair processing.

Disclosed herein is a test circuit for a 3D semiconductor device for detecting soft errors and a method for testing thereof. The test circuit includes a first Multiple Input Signature Register (MISR) disposed in a first semiconductor chip, the first MISR compressing a first test result signal corresponding to a test pattern, a second MISR disposed in a second semiconductor chip stacked on or under the first semiconductor chip, the second MISR compressing a second test result signal corresponding to the test pattern, and a first error detector to detect a soft error by comparing a first output signal output from the first MISR with a second output signal output from the second MISR.

A semiconductor memory device includes: a cell array region storing and outputting data selected based on an input address and including a first cell region storing a failure address; an input control signal generator generating a compression signal informing presence of failure cells, and generating an input control signal based on the compression signal; an output control signal generator generating an output control signal in response to the input control signal and a pre-charge signal; a failure address latch storing the input address as the failure address in response to the input control signal, and outputting the failure address based on the output control signal; a failure address mapper mapping the failure address to the data line to store the failure address in the first cell region; and a non-volatile memory device receiving the failure address from the first cell region and programming it in a rupture mode.

An IC includes an array of processor units, arranged in two or more subarrays. A subarray has a test generator, a multiplexer to apply a test vector to a datapath, and a test result output. It includes one or more processor units. A test result compressor is coupled with an output of the datapath, and compresses output data to obtain a test signature, which it stores in a signature register. The signature register is legible from outside the subarray. The datapath includes one or more memories and one or more ALUs. Test data travels through the full datapath, including the memories and the ALUs. ALU control registers are overridden during test to ensure a testable datapath.

A processing device receives a request to write data to a memory device. The processing device generates a codeword based on the data. The codeword comprises the data and error correction code. The processing device generates a compressed codeword by compressing the codeword. The processing device stores the compressed codeword on a page of the memory device.

Aspects of the invention provide for reducing BIST test time for a memory of an IC chip. In one embodiment, a BIST architecture for reducing BIST test time of a memory for an integrated circuit (IC) chip, the architecture comprising: a pair of latches for receiving bursts of data from a memory; a first compression stage for receiving a burst of data and compressing the burst of data into a plurality of latches; a second compression stage for comparing the compressed bursts of data with expected data; and a logic gate for determining whether there is a fail in the burst of data.

Aspects of the invention provide for reducing BIST test time for a memory of an IC chip. In one embodiment, a BIST architecture for reducing BIST test time of a memory for an integrated circuit (IC) chip, the architecture comprising: a pair of latches for receiving bursts of data from a memory; a first compression stage for receiving a burst of data and compressing the burst of data into a plurality of latches; a second compression stage for comparing the compressed bursts of data with expected data; and a logic gate for determining whether there is a fail in the burst of data.

A memory device including a data pad, and first and second data strobe pads, a data strobe signal generation circuit suitable for generating a read data strobe signal, outputting the read data strobe signal to the first data strobe pad, and generating an internal data strobe signal based on the read data strobe signal, during a test read operation, an input circuit suitable for feeding back and receiving data outputted to the data pad, during the test read operation, an alignment circuit suitable for aligning data received by the input circuit, based on the internal data strobe signal, and a test register circuit suitable for performing a preset operation on the data aligned by the alignment circuit and storing data obtained through the preset operation, wherein the test register circuit outputs the stored data to a read path during the test read operation.