A system include multiple memory dice and a processing device coupled to the multiple memory dice. The processing device is to perform operations, including: reading temperature values from registers at multiple memory dice, wherein each temperature value is associated with a temperature at a respective die of the multiple memory dice; reading error-correcting code (ECC)-protected data from the multiple memory dice; determining whether an ECC check of the ECC-protected data results in detecting an error; in response to detecting the error from the ECC-protected data for a die of the multiple memory dice, performing a confirmation check that the error is a result of a defect in the die; and in response to the confirmation check confirming the die is defective, ignoring a temperature value from the die when determining whether to trigger a thermal-related operation.

An encoder of a storage medium receives, at a plurality of latches respectively associated with a plurality of memory cells, soft data corresponding to data subject to a read operation specified by the a storage controller, compresses the soft data, and stores the compressed soft data in a buffer before transmitting the compressed soft data to the storage controller. Upon the buffer being full, the encoder writes uncompressed soft data back to at least a subset of the plurality of latches, and upon completion of the writing of the uncompressed soft data, the encoder resumes compressing and storing of soft data in the buffer, and transmits the compressed soft data to the storage controller.

A memory system includes a non-volatile memory and a controller. The controller is configured to, during a writing operation, generate a first error-detecting code from data that is input, perform a predetermined conversion on the data into first conversion data, generate a second error-detecting code from the first conversion data, and store the data, the first error-detecting code, and the second-error detecting code in the non-volatile memory. The controller is configured to during a read operation, read the data, the first error-detecting code, and the second error-detecting code from the non-volatile memory, perform a first error detection on the data using the first error-detecting code, perform the predetermined conversion on the data into second conversion data, perform a second error detection on the second conversion data using the second error-detecting code, and output the second conversion data based on results of the first and second error detections.

A memory test circuit apparatus and a method are provided. The method may include: compressing first test data output by a first storage array in a memory to generate first compressed data, compressing second test data output by a second storage array in the memory to generate second compressed data, compressing the first compressed data and the second compressed data to generate third compressed data, and outputting one of the first compressed data, the second compressed data and the third compressed data to determine a working condition of each of the first storage array and the second storage array. This method can provide not only a test result on a memory, but also a test result for individual storage array within the memory, which improves the efficiency of a circuit test.

One example includes an integrated circuit (IC). The IC includes non-volatile memory and logic. The logic is configured to receive repair code associated with a memory instance and assign a compression parameter to the repair code based on a configuration of the memory instance. The logic is also configured to compress the repair code based on the compression parameter to produce compressed repair code and to provide compressed repair data that includes the compressed repair code and compression control data that identifies the compression parameter. A non-volatile memory controller is coupled between the non-volatile memory and the logic. The non-volatile memory controller is configured to transfer the compressed repair data to and/or from the non-volatile memory.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

An apparatus may include a memory array, a test circuit coupled to the memory array, a counter circuit coupled to the test circuit and an input/output (I/O) circuit coupled to the counter circuit. During a test operation, the test circuit may receive blocks of data from the memory array and compare the data to detect errors in the blocks of data. The counter circuit may increment a count value in response to detection of an error by the test circuit, and the I/O circuit may provide the count value to an output. The test circuit may also provide test comparison data based on the received blocks of data, and the I/O circuit may provide one of the count value and the test comparison data to the output.

A stacked semiconductor device may include: a base die; and a plurality of core dies stacked over the base die and coupled to each other through a plurality of through-electrodes and a reference through-electrode, wherein the base die includes a first test circuit suitable for transferring a test oscillating signal to at least one target through-electrode among the through-electrodes, and outputting a test output signal by comparing a test base signal generated based on the test oscillating signal, with a test core signal transferred through the reference through-electrode, during a test operation; and wherein each of the core dies includes a second test circuit suitable for generating the test core signal corresponding to the test oscillating signal transferred through the target through-electrode, and transferring the test core signal to the reference through-electrode, during the test operation.

Systems and methods for repairing a memory. A method includes performing a repair analysis of the embedded memories to produce repair information. The method includes storing the repair information in the registers, where the registers are organized into groups having chains of identical length. The method includes performing collision detection between the repair information in each of the groups. The method includes merging the repair information in each of the groups. The method includes repairing the embedded memories using the merged repair information.