The present disclosure relates to a structure which includes a twin-cell memory which is configured to program a plurality of write operations, a current sense amplifier which is connected to the twin-cell memory and is configured to sense a current differential and latch a differential voltage based on the current differential, and at least one current source which is connected to the current sense amplifier and is configured to add an offset current to the current sense amplifier to create the differential voltage.

The present disclosure relates to a structure which includes a twin-cell memory which is configured to program a plurality of write operations, a current sense amplifier which is connected to the twin-cell memory and is configured to sense a current differential and latch a differential voltage based on the current differential, and at least one current source which is connected to the current sense amplifier and is configured to add an offset current to the current sense amplifier to create the differential voltage.

An electrical fuse (E-fuse) circuit is disclosed, which relates to a technology for processing a failed part of the E-fuse circuit. The E-fuse circuit may be configured to detect failed data and or store a failed address.

The present disclosure relates to a structure which includes a twin-cell memory which is configured to program a plurality of write operations, a current sense amplifier which is connected to the twin-cell memory and is configured to sense a current differential and latch a differential voltage based on the current differential, and at least one current source which is connected to the current sense amplifier and is configured to add an offset current to the current sense amplifier to create the differential voltage.

The present invention discloses a 3D-MPROM with reserved level (3D-MPROM.sub.RL). Versions of the 3D-MPROM.sub.RL, including an original 3D-MPROM.sub.RL and at least an updated 3D-MPROM.sub.RL, collectively form a 3D-MPROM.sub.RL family. Within a 3D-MPROM.sub.RL family, 3D-MPROM.sub.RL's of different versions are same except for at least a reserved level, which is absent in the original 3D-MPROM.sub.RL but present in the updated 3D-MPROM.sub.RL.

A one-time programmable memory includes memory locations that are each identified by an address, where each memory location is configured to store a digital data having a given number of bits. The memory locations are arranged into a first memory zone, a second memory zone, and a third memory zone. A method for controlling the one-time programmable memory includes: determining that a read operation of a digital data in a first memory location of the first memory zone has failed, and in response thereto writing the digital data in a second memory location of the second memory zone and writing, in a third memory location of the third memory zone, the address of the first memory location and an identifier of the second memory location.

Methods, devices, and systems for content addressable memory (CAM) loading in semiconductor devices are provided. In one aspect, an example memory device includes a memory array and a peripheral circuit coupled to the memory array. The peripheral circuit includes CAMs, a data path, and a buffer circuit coupled to the CAMs through the data path. The buffer circuit includes a multiplexer coupled to a storage unit and a command/address (CA) interface. The multiplexer is configured to dynamically select either the storage unit or the CA interface.