A method for manufacturing a resistivity standard sample include the steps, preparing a first-conductivity-type silicon single crystal substrate, measuring a thickness of the silicon single crystal substrate by using a thickness measuring instrument having traceability to the national standard, growing a second-conductivity-type silicon epitaxial layer on the silicon single crystal substrate to fabricate an epitaxial wafer having a p-n junction, measuring a thickness of the epitaxial wafer by using the thickness measuring instrument having the traceability to the national standard, obtaining a thickness of the silicon epitaxial layer from the thicknesses of the epitaxial wafer and the silicon single crystal substrate, and measuring a resistivity of the silicon epitaxial layer by using a resistivity measuring instrument having traceability to a resistivity standard reference material. Consequently, the method for manufacturing which enables manufacturing a resistivity standard sample having the traceability to the resistivity standard reference material of, e.g., NIST is provided.

Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.

An optical filter including at least one of a high refractive index material and a low refractive index material; wherein the optical filter exhibits a reduced angle shift in at least one of a visible, near infrared, and an extreme ultraviolet wavelength is disclosed. A method of depositing a film is also disclosed.

Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method including: homoepitaxially growing a thin film on a substrate, using the substrate in which a dislocation density on its main surface is 5?10.sup.6 pieces/cm.sup.2 or less, a concentration of oxygen therein is less than 1?10.sup.17 at.Math.cm.sup.?3, and a concentration of impurities therein other than n-type impurity is less than 1?10.sup.17 at .Math.cm.sup.?3; and inspecting a film quality of the thin film formed on the substrate, wherein in the inspection of the film quality, the film quality of the thin film is inspected by detecting a deviation of an amount of reflected light at a predetermined wavenumber determined in a range of 1,600 cm.sup.?1 or more and 1,700 cm.sup.?1 or less in a reflection spectrum obtained by irradiating the thin film on the substrate with infrared light, from an amount of reflected light at the predetermined wavenumber determined according to a film thickness of the thin film, a carrier concentration of the substrate, and a carrier concentration of the thin film.

A reflectance detection method in which a workpiece is irradiated with a laser beam and reflectance is detected, irradiating, with a light amount H0, the workpiece with a laser beam with a first wavelength X1 shorter than a detection-target wavelength X and detecting a light amount H1 of reflected return light, irradiating the workpiece with a laser beam with a second wavelength X2 longer than the detection-target wavelength X with the light amount H0 and detecting a light amount H2 of reflected return light, and employing H calculated based on an expression shown below as the light amount of return light obtained when the workpiece is irradiated with the detection-target wavelength X and calculating reflectance obtained when the workpiece is irradiated with the detection-target wavelength X based on H/H0.
H=H1+(H2H1)(XX1)/(X2X1)

A method for manufacturing a resistivity standard sample include the steps, preparing a first-conductivity-type silicon single crystal substrate, measuring a thickness of the silicon single crystal substrate by using a thickness measuring instrument having traceability to the national standard, growing a second-conductivity-type silicon epitaxial layer on the silicon single crystal substrate to fabricate an epitaxial wafer having a p-n junction, measuring a thickness of the epitaxial wafer by using the thickness measuring instrument having the traceability to the national standard, obtaining a thickness of the silicon epitaxial layer from the thicknesses of the epitaxial wafer and the silicon single crystal substrate, and measuring a resistivity of the silicon epitaxial layer by using a resistivity measuring instrument having traceability to a resistivity standard reference material. Consequently, the method for manufacturing which enables manufacturing a resistivity standard sample having the traceability to the resistivity standard reference material of, e.g., NIST is provided.

A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material into an integrating sphere to scatter the received radiation and passing portions of the radiation through band pass filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.

A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.