In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.

In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.

A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

An electronic circuit includes signal processing electronics. The electronic circuit receives an electrical signal generated by a photodetector based on a light beam from a location on a material including a signal of interest and one or more modulation frequencies. The electronic circuit discriminates a portion of the electrical signal proportional to a characteristic of the signal of interest from other components of the electrical signal using a low pass filter with a transfer function including a notch at a notch frequency corresponding to one of the modulation frequencies. The electronic circuit determines a value for the characteristic of the signal of interest from the discriminated portion of the electrical signal. The signal processing electronics further outputs the value of the characteristic of the signal of interest.

A defect inspection system includes a stage configured to receive a measurement target thereon, wherein the measurement target includes a first layer and a second layer disposed under the first layer; and a defect inspection apparatus including: a light source unit configured to output first incident light and second incident light; a beam splitter configured to reflect the first incident light and the second incident light from the first light source to the measurement target, and transmit first reflected light and second reflected light therethrough, wherein the first reflected light corresponds to the first incident light reflected from the first layer and the second reflected light corresponds to the second incident light reflected from the second layer; an objective lens disposed between the beam splitter and the measurement target; and a detector configured to: detect the first reflected light and generate a first image of the first layer based on the detected first reflected light; and detect the second reflected light and generate a second image of the second layer based on the detected second reflected light, wherein the first incident light is included in a visible light band, and wherein the second incident light is included in an infrared light band.

A substrate evaluation method includes: a measurement operation of measuring an absorbance spectrum in a wavenumber range including a peak of at least one of a LO (Longitudinal Optical) phonon or a TO (Transverse Optical) phonon by analyzing a substrate having an anisotropic structure formed thereon with an infrared spectroscopy analysis; and a derivation operation of deriving evaluation information about the anisotropic structure from the measured absorbance spectrum.

The methods and apparatus provide phase-resolved optical metrology for determining qualities of a substrate and films thereon. Transmitted and reflected signals are coupled using both amplitude and phase information to improve the metrology information obtained from film layers on the substrate.

Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.

A measuring apparatus according to one embodiment includes a light source, a spectrometer, and a calculator. The light source emits measurement light. The spectrometer measures a spectroscopic spectrum waveform of light. The calculator is configured to: perform Fourier transform of the spectroscopic spectrum waveform; extract a waveform; calculate a phase angle at an amplitude peak position of the extracted waveform; calculate a temperature or thickness change amount based on the change amount of the phase angle; and calculate a temperature by adding the temperature change amount to a reference temperature, or calculate a thickness of the measurement target object by adding the thickness change amount to a reference thickness.

Provided is an inspection device including: a light source generating and outputting a femtosecond laser beam; a beam splitter configured to split the femtosecond laser beam into a first light and a second light; a first optical array configured to separate the first light into a first sub-light and a second sub-light and to provide the first and the second sub-lights to an inspection target, wherein the first sub-light and the second sub-light are polarized in different directions; a microprobe configured to detect a photoelectric signal caused by incidence of the first and the second sub-lights on the inspection target, the microprobe including a first microprobe configured to detect the first sub-light and a second microprobe configured to detect the second sub-light; and a second optical array configured to provide the second light to the microprobe.