Ultraviolet illumination with optical elements to irradiate objects and/or fluid for purposes of sterilization, disinfection, and/or cleaning. The objects and/or fluid can be irradiated using an ultraviolet illuminator having at least one ultraviolet light emitting source. An ultraviolet transparent housing encapsulates the at least one ultraviolet light emitting source. The ultraviolet transparent housing includes an ultraviolet transparent material that emits ultraviolet light from the at least one ultraviolet light emitting source while preventing humidity from penetrating the ultraviolet transparent housing and damaging the at least one ultraviolet light emitting source. At least one ultraviolet transparent optical element is located about the ultraviolet transparent housing interspersed with the ultraviolet transparent material.

Ultraviolet irradiation of food handling instruments for purposes of sterilization, disinfection, cleaning and other treatment capabilities. A housing having receptacles receives one or more food handling instruments. Ultraviolet light emitting sources located about the receptacles can direct ultraviolet light towards the receptacles and any food handling instruments placed therein. One or more sensors located about the receptacles can detect operational conditions associated with the receptacles and any food handling instruments received therein. A control unit, operatively coupled to the ultraviolet light emitting sources and the one or more sensors, manages the irradiation of the receptacles and any food handling instruments in the receptacles as a function of the operational conditions detected by the one or more sensors.

In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.

A semiconductor defect inspection apparatus for inspecting a specimen including a semiconductor substrate having a surface on which a predetermined pattern is formed, includes an excitation light irradiator, a polarization converter, a detector, and a defect analysis detector. The excitation light irradiator irradiates the specimen with excitation light along an optical path from the irradiator to the specimen and such that the excitation light is obliquely incident at a predetermined incident angle. The first polarization converter is disposed in the optical path, and converts the excitation light into s-polarized light. The detector detects photoluminescence light generated from the specimen when the excitation light is incident on the specimen. The defect analysis detector detects a dislocation defect by analyzing a photoluminescence image obtained by photoelectrically converting the photoluminescence light.

A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

A method for mapping and analyzing a GaN substrate to identify areas of the substrate suitable for fabrication of electronic devices thereon. Raman spectroscopy is performed over the surface of a GaN substrate to produce maps of the E.sub.2 and A.sub.1 peaks at a plurality of areas on the substrate surface, the E.sub.2 and A.sub.1 peaks being associated with known concentrations of defects and charge carriers, so that areas of the GaN substrate having relatively high resistivity or conductivity which make those areas suitable or unsuitable for fabrication of electronic devices can be identified. The devices can then be fabricated only on suitable areas of the substrate, or the size of the devices can be tailored to maximize the yield of devices fabricated thereon. Substrates not meeting a threshold level of defect and/or charge carrier concentration can be discarded without fabrication of poor-quality devices thereon.

A secondary battery includes an electrode assembly configured to have a structure in which a separator is interposed between a positive electrode and a negative electrode, a battery case having formed therein a receiving portion configured to receive the electrode assembly, electrode leads configured to protrude outwards from the battery case, and lead films attached to opposite surfaces of each of the electrode leads, wherein each of the lead films includes a luminous material.

Nondestructive characterization of crystalline wafers is provided, including defect detection, identification, and counting. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods based on deep neural networks. Certain aspects relate to nondestructive methods for defect characterization of silicon carbide (SiC) wafers. By subjecting SiC wafers to nondestructive defect characterization, SiC wafers in their final state may be characterized and subsequently used for device fabrication, vastly reducing the expense of the characterization process. Nondestructive defect characterization also allows for increased sampling and improved feedback loops between crystalline growth process development and subsequent device production.

A system for detecting defects in a contact lens material comprising: a camera having a lens and a digital image output for inspecting said lens suspended in saline solution, wherein said camera's digital image output includes only the image produced by light in a color spectrum corresponding to a portion of the spectrum of light produced by fluorescent emission of said lens material; a first Ultra violet light source to illuminate said lens and excite fluorescent emission therein; a first filter to filter the emitted light from the lens which is illuminated by Ultra violet light; and a computer having an associated memory, an input for accepting the digital image output from said camera, and an output representative of an analyzed digital image wherein said analyzed digital image includes visible indications of any imperfections detected in said lens material.

A method for detecting mentholated tobacco, comprising irradiating tobacco containing menthol and a fluorescent taggant with radiation and observing the tobacco for fluorescence from the taggant. A system and method for detecting and separating mentholated tobacco from non-mentholated tobacco within a product stream is also provided.