An apparatus for inspecting containers includes a rotation device which is adapted to rotate the container about the axis of symmetry; a camera sensitive to said predetermined electromagnetic radiation and with the container located in the field of view thereof; a processing unit to control the rotation device to move the container at a first angular speed constant for a first time period; acquiring at least a first and a second series of images of a portion of the container in a rotation thereof through 360°; to identify defective areas having at least one characteristic different from the characteristics of adjacent areas, generating first and second maps of the defective areas; to compare the position of the defective areas of the maps; to establish that first impurities are present in the container or in the liquid contained in the container.

A method for high throughput defect detection, the method may include (i) performing, using first detection channels, a simultaneous inspection process through a segmented pupil plane that comprises multiple pupil plane segments to select one or more pupil plane segments of interest out of multiple pupil plane segments; (ii) configuring one or more configurable filters related to second detection channels to pass radiation received from the one or more pupil plane segment of interest and to block radiation received from one or more non-of-interest pupil plane segments; and (iii) performing, using the second detection channels, a partially masked pupil plane inspection process.

A smart conversion and calibration of the defect coordinate, diagnosis, sampling system and the method thereof for manufacturing fab is provided. The intelligent defect diagnosis method includes receiving pluralities of defect data, design layout data, analyzing the defect data, design layouts, by a Critical Area Analysis (CAA) system. The method utilizes the precisely calibrated coordinate, the defect layout pattern, and the higher accurate calibrated defect size value. So, a more precise killer defect index can be generated with calibrated coordinate deviation calibration and defect size deviation calibration. When judging a defect relating to short circuit or open circuit failure probability, the defect failure result is more accurate and less incorrect judgment.

A smart conversion and calibration of the defect coordinate, diagnosis, sampling system and the method thereof for manufacturing fab is provided. The intelligent defect diagnosis method includes receiving pluralities of defect data, design layout data, analyzing the defect data, design layouts, by a Critical Area Analysis (CAA) system. The method utilizes the precisely calibrated coordinate, the defect layout pattern, and the higher accurate calibrated defect size value. So, a more precise killer defect index can be generated with calibrated coordinate deviation calibration and defect size deviation calibration. When judging a defect relating to short circuit or open circuit failure probability, the defect failure result is more accurate and less incorrect judgment.

A smart conversion and calibration of the defect coordinate, diagnosis, sampling system and the method thereof for manufacturing fab is provided. The intelligent defect diagnosis method includes receiving pluralities of defect data, design layout data, analyzing the defect data, design layouts, by a Critical Area Analysis (CAA) system. This method utilizes the precisely calibrated coordinate, the defect layout pattern, and the higher accurate calibrated defect size value. So, a more precise killer defect index can be generated with calibrated coordinate deviation calibration and defect size deviation calibration. When judging a defect relating to short circuit or open circuit failure probability, the defect failure result is more accurate and less incorrect judgment.

A system and method for monitoring a track and/or rail employs one or more distance measuring imagers mounted to a railcar and directed to image the track and/or rails wherein the images are geo-tagged with location data. Geo-tagged distance measurements are processed to determine at least track gauge and/or at least rail fastener integrity. The system and method may also determine other track and/or rail integrity issues including, e.g., rail profile, rail alignment, center point dip, cross level, rail cant, wheel wear, wheel integrity, rail wear, rail defects, and/or rail temperature. The system and method may also determine when inspection and/or maintenance of the track is indicated, and provide selected records of where and/or when such inspection and/or maintenance is indicated.

An apparatus according to the present disclosure acquires a display condition for displaying at least a part of target data as a display image on a display unit, determines, in a case where the display image is changed, whether to store the display condition according to a changed display image in a storage unit, based on an index relating to the change of the display image, and stores, in a case where the display condition is determined to be stored, the display condition according to the changed display image in the storage unit.

A method for mapping and analyzing a GaN substrate to identify areas of the substrate suitable for fabrication of electronic devices thereon. Raman spectroscopy is performed over the surface of a GaN substrate to produce maps of the E.sub.2 and A.sub.1 peaks at a plurality of areas on the substrate surface, the E.sub.2 and A.sub.1 peaks being associated with known concentrations of defects and charge carriers, so that areas of the GaN substrate having relatively high resistivity or conductivity which make those areas suitable or unsuitable for fabrication of electronic devices can be identified. The devices can then be fabricated only on suitable areas of the substrate, or the size of the devices can be tailored to maximize the yield of devices fabricated thereon. Substrates not meeting a threshold level of defect and/or charge carrier concentration can be discarded without fabrication of poor-quality devices thereon.

The present application provides a method for characterizing defects in silicon crystal comprising the following steps: etching a surface of the silicon crystal to remove a predicted thickness of the silicon crystal; conducting a LLS scanning to a surface of the etched silicon crystal to obtain a LLS map of the surface, a LSE size of defects, and defect bulk density; based on at least one of the LLS map of the surface, the LSE size of defects and the defect bulk density, determining a type of defect existing in the silicon crystal and/or a defect zone of each type of defect on the surface. By applying the method, the characterizing period and the characterizing cost can be reduced, plural defects such as vacancy, oxygen precipitate and dislocation can be characterized simultaneously, the characterizing accuracy can be enhanced, and the defect type and the defect zone can be determined with high reliability. In addition, the method can be applied to all crystal defect types, is easy to operate, and is an environmentally friendly method for determination of grown-in defects.

An image processing apparatus includes a dividing unit, a measuring unit, a comparing unit, and a determining unit. The dividing unit spatially divides a time-series image of a structure surface captured during passage of a traffic load into a plurality of partial regions, and generates a plurality of partial time-series images. The measuring unit measures temporal changes in deflection amount of the structure surface in the respective partial regions from the plurality of partial time-series images. The comparing unit compares the temporal changes in deflection amount of the structure surface in the respective partial regions. The determining unit determines an orientation of the time-series image with respect to a passage direction of the traffic load based on a result of the comparison.