A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.-

Provided are a defect observation method and a defect observation device which detect a defect from an image obtained by imaging the defect on a sample with an optical microscope by using positional information of the defect on the sample detected by a different inspection device to correct the positional information of the defect and observe in detail the defect on the sample with a scanning electron microscope using the corrected positional information. The defect observation method includes detecting the defect from the image to correct the positional information of the defect, switching a spatially-distributed optical element of a detection optical system of the optical microscope according to the defect to be detected, and changing an image acquisition condition for acquiring the image and an image processing condition for detecting the defect from the image according to a type of the switched spatially-distributed optical element.

A structure of interest (T) is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (19, 274, 908, 1012). A processor (PU) calculates a property such as linewidth (CD) or overlay (OV), for example by simulating (S16) interaction of radiation with a structure and comparing (S17) the simulated interaction with the detected radiation. The method is modified (S14a, S15a, S19a) to take account of changes in the structure which are caused by the inspection radiation. These changes may be for example shrinkage of the material, or changes in its optical characteristics. The changes may be caused by inspection radiation in the current observation or in a previous observation.

A method of defect inspection for a photomask is provided. According to the method, a light transmittance correction is performed to reduce a light transmittance of a calibration key pattern region of a photomask including a field region and the calibration key pattern region to the light transmittance of the field region. Light calibration is performed using the calibration key pattern region having corrected light transmittance. Defect inspection for the field region is performed by applying a result of the light calibration.

Systems and methods are described herein for analyzing the application of adhesives. An adhesive comprising a fluorescent property is applied to a component. The component is illuminated using one or more of wavelengths of light from a light source, wherein the adhesive is configured to absorb the one or more wavelengths of light and fluoresce in response. An image of the component is captured using a camera while the component is illuminated using the light source. One or more fluorescence characteristics from the image are determined and a state of the applied adhesive is determined based on the one or more fluorescence characteristics.

A printing process for printing an ink pattern on a substrate is provided. The ink pattern to be printed is based on an available pattern layout. The pattern layout defines a desired layout of the ink pattern to be printed. Based on the pattern layout an input image for allocating dot positions of the ink pattern is generated. The printing process includes a step of comparing a scan image with the input image to carry out a quality inspection to detect any print defects in the printed ink pattern. The printing process includes a step of providing a decision on an approval or a rejection of the printed ink pattern. In case of an approval, the substrate can be supplied to a subsequent processing station to finalize the substrate. In case of a rejection, the substrate including print defects can be recycled.

Provided is a manufacturing support apparatus capable of manufacturing an optoelectronic device of improved characteristics with a low cost and a high yield rate. An inspection apparatus outputs to a server serving as a manufacturing support apparatus results obtained by performing defect inspections in different steps that may relate to the occurrence of defect determining a defective item in a primary process of device manufacturing. In the server, defect inspection result acquisition units acquire inspection results in respective steps, and a database separately stores the inspection results of the respective steps. By comparing defect information included in the inspection results obtained in the plurality of steps and the reference information indicating an inspection result of the normal state, a data processing control unit of the server determines whether an identical defect is indicated. When the determination result indicates the identical defect or a change in the state of a defect, the inspection result data at the time is provided as the record data for a device inspection performed later.

An optical characteristics measuring device includes a first light source capable of irradiating a sample with light and a second light source capable of irradiating the sample with microwaves. A measuring device measures microwave power of the reflection of the microwaves from the sample. A calculation unit calculates a parameter relating to the electrical conductivity of the sample using the microwave power of the reflected waves measured by the measuring device. A control unit controls the intensity of the light of the first light source so that the parameter becomes approximately a predetermined value. The calculation unit specifies first to n-th intensities of the light at which the parameter becomes approximately the predetermined value for each of the first to n-th wavelengths of the light and obtains relationships between the first to n-th wavelengths and the first to n-th intensities corresponding to the respective first to n-th wavelengths.

Systems and methods are provided for determining defects in a semiconductor structure sample that is prepared for analysis by microscopy. A semiconductor structure sample preparation and analysis system includes a semiconductor structure sample that includes a structure, a protective capping layer on the structure, and a gap filler material on the protective capping layer. A microscopy apparatus acquires an image of the semiconductor structure sample. Sample defect recognition circuitry determines the presence of a defect in the semiconductor structure sample based on the acquired image.

The purpose of the present invention is to improve accuracy in inspection of an appearance of a mold. The inspection device includes at least one processor for performing an inspection step of inspecting an appearance of a mold using a learned model constructed by machine learning. Input into the learned model includes an inspection image obtained by imaging the appearance of the mold. Output from the learned model is information indicating an inspection result of the appearance of the mold.