An inertial sensor includes: a substrate; a moving element swinging about a swing axis along a Y-axis; a detection electrode provided at the substrate, overlapping the moving element as viewed in a plan view from a Z-axis direction orthogonal to the Y-axis, and forming an electrostatic capacitance with the moving element; an exposure part provided at an inner side of the detection electrode and exposing a surface facing the moving element, of the substrate; a protrusion overlapping the moving element as viewed in a plan view from the Z-axis direction and protruding toward the moving element from the exposure part of the substrate; and a covered electrode provided at a top of the protrusion and having a same electric potential as the moving element.

A physical quantity sensor includes: an oscillating body having a support section and a movable section which is connected to the support section through connection portions, in which the movable section has a first movable portion and a second movable portion; a first fixed electrode which is disposed to face the first movable portion; a second fixed electrode which is disposed to face the second movable portion; and a dummy electrode which is disposed to face the second movable portion so as not to overlap the second fixed electrode and has the same potential as potential of the oscillating body, in which the first fixed electrode is disposed such that a portion thereof overlaps the support section when viewed in a plan view.

Implementations of an accelerometer component may include: a first Z proof mass rotatable about a first axis and coupled to an anchor, the first Z proof mass including a first plurality of electrodes. Implementations may include a second Z proof mass rotatable about the first axis and coupled to the anchor, the second Z proof mass including a second plurality of electrodes. An X-axis accelerometer subcomponent may be located within a perimeter of the first Z proof mass, and a Y-axis accelerometer subcomponent may be located within a perimeter of the second Z proof mass. The first plurality of electrodes and the second plurality of electrodes may be symmetrical about each of the first axis, a second axis perpendicular to the first axis, a third axis diagonal to the first axis and second axis, and a fourth axis diagonal to the first axis and second axis.

A sensor system including a chip arrangement, the chip arrangement including a sensor and an acceleration sensor, and the sensor system including a processor circuit. The processor circuit is configured in such a way that: one or multiple temperature-dependent variables and/or properties of the sensor are ascertained, and an offset of a signal of the acceleration sensor induced by a temperature gradient is corrected with the aid of the one or the multiple ascertained temperature-dependent variables and/or properties of the sensor.

Z-axis teeter-totter accelerometers with embedded movable structures are disclosed. The teeter-totter accelerometer may include an embedded mass which pivots or translates out-of-plane from the teeter-totter beam. The pivoting or translating embedded mass may be positioned to increase the sensitivity of the z-axis accelerometer by providing greater z-axis displacement than the teeter-totter beam itself exhibits.

Embodiments of multi-frequency excitation are described. In various embodiments, a natural frequency of a device may be determined. In turn, a first voltage amplitude and first fixed frequency of a first source of excitation can be selected for the device based on the natural frequency. Additionally, a second voltage amplitude of a second source of excitation can be selected for the device, and the first and second sources of excitation can be applied to the device. After applying the first and second sources of excitation, a frequency of the second source of excitation can be swept. Using the methods of multi-frequency excitation described herein, new operating frequencies, operating frequency ranges, resonance frequencies, resonance frequency ranges, and/or resonance responses can be achieved for devices and systems.

A MEMS accelerometric sensor includes a bearing structure and a suspended region that is made of semiconductor material, mobile with respect to the bearing structure. At least one modulation electrode is fixed to the bearing structure and is biased with an electrical modulation signal including at least one periodic component having a first frequency. At least one variable capacitor is formed by the suspended region and by the modulation electrode in such a way that the suspended region is subjected to an electrostatic force that depends upon the electrical modulation signal. A sensing assembly generates, when the accelerometric sensor is subjected to an acceleration, an electrical sensing signal indicating the position of the suspended region with respect to the bearing structure and includes a frequency-modulated component that is a function of the acceleration and of the first frequency.

An inertial sensor includes a movable mass, a torsion element, and a suspension system suspending the movable mass apart from a surface of a substrate. The torsion element is coupled to the movable mass for enabling motion of the movable mass about an axis of rotation in response to a force imposed upon the movable mass in a direction perpendicular to the surface of the substrate. The suspension system includes first and second anchors attached to the substrate and displaced away from the axis of rotation, a beam connected to the movable mass via the torsion element, a first folded spring coupled between the first anchor and a first beam end of the beam, and a second folded spring coupled between the second anchor and a second beam end of the beam.

A method for operating a micromechanical z-accelerometer. The method includes applying a test signal to an electrode in order to induce a defined displacement of a rocker of the z-accelerometer during operation of the z-accelerometer; detecting the displacement of the rocker and converting the displacement into an acceleration value; and evaluating the acquired acceleration value by determining a difference between the acquired acceleration value and an initial acceleration value acquired in a manufacturing process, a difference between the acquired acceleration value and the initial acceleration value being compared to a defined threshold value and assessed.

The present disclosure provides a composite sensor and a manufacturing method thereof. The composite sensor includes: a first substrate and a second substrate configured to be laminated with the first substrate; a pressure sensor located on the first substrate and configured to sense a change in external pressure; and an acceleration sensor located on the second substrate and configured to sense a change in acceleration. A pressure film of the pressure sensor is configured to be spaced from the second substrate to form a pressure cavity, and a proof mass of the acceleration sensor is configured to be spaced from the first substrate to form a first anti-collision cavity. The present disclosure may reduce the chip area and reduce mutual interference.