A calibration method includes transmitting first data comprising a calibration data and a first checksum to the storage device according to each of a plurality of training parameter sets; recording a plurality of error indicators respectively which are corresponding to the plurality of training parameter sets and from the storage device; and identifying one of the plurality of training parameter sets as a predetermined parameter set according to the plurality of error indicators respectively corresponding to the plurality of training parameter sets; wherein each error indicator indicates whether transmitting the first data according to the corresponded training parameter set is successful.

A fault analysis method comprises: receiving fault data from wafer level testing that identifies locations and test results of a plurality of die; applying a kernel transform to the fault data to produce cluster data, where the kernel transform defines a fault impact distribution that defines fault contribution from the failed die to local die within an outer radial boundary of the fault impact distribution. Applying the kernel transform comprises: centering the fault impact distribution at a location of each die that failed wafer level testing, associating each local die that falls within the outer radial boundary with a respective fault contribution value according to the fault impact distribution, and accruing fault contribution values associated with each respective die of the plurality of die to produce a cluster value for the respective die, which correlates to a probability of failure of the respective die at a future time.

A system of inspecting a focus ring is provided. The system includes a measuring device, a transfer device and an operation unit. The measuring device includes a base substrate, a sensor chip and a circuit board. The sensor chip has a sensor electrode and is provided along an edge of the base substrate. The circuit board is configured to output a high frequency signal to the sensor electrode and acquire a digital value indicating electrostatic capacitance based on a voltage amplitude in the sensor electrode. The transfer device is configured to scan the measuring device. The operation unit is configured to obtain difference values by performing a difference operation with respect to the digital values acquired by the measuring device at multiple positions along a direction which intersects with an inner periphery of the focus ring.

A system for testing circuits of an integrated circuit semiconductor wafer includes a tester system for generating signals for input to the circuits and for processing output signals from the circuits for testing the wafer and a test stack coupled to the tester system. The test stack includes a wafer probe for contacting a first surface of the wafer and for probing individual circuits of the circuits of the wafer, a wafer thermal interposer (TI) layer operable to contact a second surface of the wafer and operable to selectively heat areas of the wafer, and a cold plate disposed under the wafer TI layer and operable to cool the wafer. The system further includes a thermal controller for selectively heating and maintaining temperatures of the areas of the wafer by controlling cooling of the cold plate and by controlling selective heating of the wafer TI layer.

A wafer-level method of testing an integrated circuit (IC) device includes: (i) applying a plurality of test operation signals to a wafer containing the IC device, (ii) generating a test enable signal in response to detecting, on the wafer, a toggling of at least one of the plurality of test operation signals, and then (iii) testing at least a portion of the IC device in response to the generating the test enable signal. The generating may also include generating a test enable signal in response to detecting, on the wafer, an inactive-to-active transition of a toggle detection signal.

Aspects of the invention include a wafer test device with a conformal laminate and rigid probes extending from the laminate to form an electrical connection with a microcircuit under test. The wafer test device also includes a spring plate on a side of the laminate that is opposite a side from which the rigid probes extend. The spring plate includes a conformal inner frame and a rigid outer frame. The laminate is attached to the inner frame of the spring plate.

FPAs on a wafer can be tested prior to dicing the wafer into individual dies. A focal plane array (FPA) can comprise an array of photodetectors, such as microbolometers, on a semiconductor substrate or die. FPAs can be manufactured on a wafer to make multiple FPAs on a single wafer that can be later diced or divided into individual FPAs. Prior to dicing the wafer, the FPAs can be tested electrically and radiometrically in bulk to characterize individual FPAs, to identify bad pixels, to identify bad chips, to calibrate individual FPAs, and the like. These test results can be used to determine acceptable FPAs and can be used to provide initial settings for imaging systems with the tested and integrated FPA.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

An electric field sensor includes sense and reference cells. The sense cell produces a resistance that varies relative to an intensity of an electric field, and the reference cell produces a resistance that is invariable relative to the intensity of the electric field. An output signal indicative of the intensity of the electric field is determined using the difference between the resistances. A system includes an electric field source that outputs a digital test program as an electric field signal. The system further includes the electric field sensor formed with IC dies on a wafer. The electric field sensor receives the electric field signal. The received electric field signal is converted to the test program, and the test program is stored in memory on the wafer. The electric field source does not physically contact the dies, but can flood an entire surface of the wafer with the electric field signal.