A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

A bonded structure is disclosed. The bonded structure can include a first element that has a first plurality of contact pads. The first plurality of contact pads includes a first contact pad and a second redundant contact pad. The bonded structure can also include a second element directly bonded to the first element without an intervening adhesive. The second element has a second plurality of contact pads. The second plurality of contact pads includes a third contact pad and a fourth redundant contact pad. The first contact pad is configured to connect to the third contact pad. The second contact pad is configured to connect to the fourth contact pad. The bonded structure can include circuitry that has a first state in which an electrical signal is transferred to the first contact pad and a second state in which the electrical signal is transferred to the second contact pad.

Embodiments of the disclosure are drawn to apparatuses and methods for testing the resistance of through silicon vias (TSVs) which may be used, for example, to couple multiple memory dies of a semiconductor memory device. A force amplifier may selectively provide a known current along a mesh wiring structure and through the TSV to be tested. The force amplifier may be positioned on a vacant area of the memory device, while the mesh wiring structure may be positioned in an area beneath the TSVs of the layers of the device. A chopper instrumentation amplifier may be selectively coupled to the TSV to be tested to amplify a voltage across the TSV generated by the current passing through the TSV. The chopper instrumentation amplifier may be capable of determining small resistance values of the TSV.

Stacked circuits are configured to facilitate post-stacking testing. According to one example, a stacked circuit may include a first die electrically coupled to a second die through a plurality of interconnects. The first die may include a test input interface configured to receive test data signals and a source test clock signal, a test output interface configured to convey test responses, a first test signal path, at least one first die-to-die output interface configured to convey to the second die the test data signals and a low-latency clock signal received from a low-latency clock path between the test input interface and the at least one first die-to-die output interface, and at least one first die-to-die input interface configured to receive test responses and the clock signal from the second die. Other aspects, embodiments, and features are also included.

This disclosure describes die test architectures that can be implemented in a first, middle and last die of a die stack. The die test architectures are mainly the same, but for the exceptions mentioned in this disclosure.

This disclosure describes die test architectures that can be implemented in a first, middle and last die of a die stack. The die test architectures are mainly the same, but for the exceptions mentioned in this disclosure.

Among other things, one or more techniques or systems for evaluating a tiered semiconductor structure, such as a stacked CMOS structure, for misalignment are provided. In an embodiment, a connectivity test is performed on vias between a first layer and a second layer to determine a via diameter and a via offset that are used to evaluate misalignment. In an embodiment, a connectivity test for vias within a first layer is performed to determine an alignment rotation based upon which vias are connected through a conductive arc within a second layer or which vias are connected to a conductive pattern out of a set of conductive patterns. In this way, the via diameter, the via offset, or the alignment rotation are used to evaluate the tiered semiconductor structure, such as during a stacked CMOS process, for misalignment.

This disclosure describes a test architecture that supports a common approach to testing individual die and dies in a 3D stack arrangement. The test architecture uses an improved TAP design to facilitate the testing of parallel test circuits within the die.

A multi-chip system includes a plurality of chips and a monitoring and calibration system. The plurality of chips include at least a first chip and a second chip, wherein an output port of the first chip is connected to an input port of the second chip via a chip-to-chip connection, the first chip transmits an output signal to the second chip via the chip-to-chip connection, and the second chip processes an input signal that is derived from the output signal transmitted via the chip-to-chip connection. The monitoring and calibration system calibrates a chip setting of at least one of the first chip and the second chip for pulse width calibration of the input signal.

This disclosure describes die test architectures that can be implemented in a first, middle and last die of a die stack. The die test architectures are mainly the same, but for the exceptions mentioned in this disclosure.