An imaging system includes an imaging device configured to image an imaging subject on an imaging optical axis, and a calculation unit configured to acquire data relating to a position and/or a size of the imaging subject based on image information acquired by the imaging device through the imaging. The calculation unit acquires change information relating to condition change in the imaging and/or change in the imaging subject on the image. The change is caused by interposition of a light transmitting member when the light transmitting member is interposed on the imaging optical axis during the imaging, and the calculation unit corrects the data based on the change information.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A multi-path interference filter. The multi-path interference filter includes a first port waveguide, a second port waveguide, and an optical structure connecting the first port waveguide and the second port waveguide. The optical structure has a first optical path from the first port waveguide to the second port waveguide, and a second optical path, different from the first optical path, from the first port waveguide to the second port waveguide. The first optical path has a portion, having a first length, within hydrogenated amorphous silicon. The second optical path has a portion, having a second length, within crystalline silicon, and the second optical path has either no portion within hydrogenated amorphous silicon, or a portion, having a third length, within hydrogenated amorphous silicon, the third length being less than the first length.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

An athermal optical waveguide structure such as an optical add drop multiplexer (OADM) or the like is fabricated by a method that includes forming a lower cladding layer on a substrate. A waveguiding core layer is formed on the lower cladding layer. An upper cladding layer is formed on the waveguiding core layer and the lower cladding layer a sol-gel material. The sol-gel material includes an organically modified siloxane and a metal oxide. A thermo-optic coefficient of the sol-gel material is adjusted by curing the sol-gel material for a selected duration of time at a selected temperature such that the thermo-optic coefficient of the sol-gel material compensates for a thermo-optic coefficient of at least the waveguiding core layer such that an effective thermo-optic coefficient of the optical waveguide structure at a specified optical wavelength and over a specified temperature range is reduced.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A multi-path interference filter. The multi-path interference filter includes a first port waveguide, a second port waveguide, and an optical structure connecting the first port waveguide and the second port waveguide. The optical structure has a first optical path from the first port waveguide to the second port waveguide, and a second optical path, different from the first optical path, from the first port waveguide to the second port waveguide. The first optical path has a portion, having a first length, within hydrogenated amorphous silicon. The second optical path has a portion, having a second length, within crystalline silicon, and the second optical path has either no portion within hydrogenated amorphous silicon, or a portion, having a third length, within hydrogenated amorphous silicon, the third length being less than the first length.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

A monolithic photonic integrated circuit includes a platform, a monolithic laser formed in/on the platform, and an electro-optic polymer modulator monolithically built onto the platform and optically coupled to the monolithic laser. The polymer modulator is optically coupled to the monolithic laser by waveguides including electro-optic polymer waveguides. The electro-optic polymer modulator and the electro-optic polymer waveguides including an electro-optic polymer core and top and bottom electro-optic polymer cladding layers. The electro-optic polymer core having an electro-optic coefficient (r.sub.33) greater than 250 pm/v, and a Tg 150 C. to 200 C., and the top and bottom electro-optic polymer cladding layers having a Tg approximately the same as the Tg of the electro-optic polymer core.