A physical layout for a circuit using amorphous metal non-linear resistors as active devices for an in-plane switching liquid crystal display sub-pixel is provided. The lower interconnect of the two amorphous metal non-linear resistors and the lower electrode of the storage capacitor may be concurrently deposited and patterned. The area of the storage capacitor is defined by the overlap of the data signal inter-connect and the storage capacitor lower electrode, which is easily modified through the size of the lower electrode and/or the size of the data signal interconnect where it overlaps the lower electrode and does not degrade the aperture ratio of the pixel. Two embodiments of sub-pixel circuits are described. One, which employs a select line bridge, enables the use of full dot inversion of the image data. The second only allows row inversion of the image data.

An array substrate, a display panel, and an electronic device are provided. The array substrate includes: a base substrate; a first electrode arranged on the base substrate; a gate line arranged on the base substrate, wherein the gate line is electrically insulated from the first electrode; a second electrode arranged on a side of the gate line away from the base substrate, wherein at least one first sub-pixel unit provided on the base substrate includes: a first connection portion arranged in a same layer as the second electrode and a second connection portion arranged in a same layer as the gate line, wherein the second connection portion is electrically connected to the first electrode, and an orthographic projection of the second connection portion on the base substrate at least partially overlaps an orthographic projection of the first connection portion on the base substrate.

The present invention provides a negative type photosensitive resin composition having high sensitivity, excellent halftone characteristics, capability to form a small tapered pattern shape, and alkali-developability.

The negative type photosensitive resin composition includes, as an alkali-soluble resin (A), at least a weakly acidic group-containing resin (A1) and an unsaturated group-containing resin (A2), the weakly acidic group-containing resin (A1) containing an acidic group having an acid dissociation constant in the range of 13.0 to 23.0 in dimethyl sulfoxide, and the unsaturated group-containing resin (A2) containing an ethylenically unsaturated double bond group.

An array substrate and a manufacturing method thereof are disclosed. The manufacturing method includes forming, on a substrate, a first metal pattern layer, a first insulating layer, a second metal pattern layer, and a second insulating layer, successively; coating a photoresist on the second insulating layer; forming a photoresist pattern and an etching protection layer, in a first region of the array substrate, the photoresist pattern exposing a part of the top surface of the second insulating layer, and being coupled to the second insulating layer through the etching protection layer; and performing etching in the first region by using the photoresist pattern as a mask to remove the etching protection layer and at least part of the second insulating layer, without etching the first insulating layer, so as to expose a part of the second metal pattern layer and form a liquid crystal is diversion groove.

A method includes a conductive film forming process of forming a conductive film 51 covering a gate insulation film IS and a semiconductor film 42, the gate insulation film 45 covering a gate electrode 37G and a gate line 35G formed on a glass substrate 32 and the semiconductor film 42 formed on the gate insulation film 45 while overlapping the gate electrode 37G, a first etching process of etching the conductive film 51 and forming a source conductive film 46S connected to the semiconductor film 42 and a drain conductive film 46D connected to the semiconductor film 42, a resist forming process performed after the first etching process and forming a resist 53R covering the semiconductor film 42, the source conductive film 46S, and the drain conductive film 46D, and a second etching process performed after the resist forming process and performing etching for removing the conductive film 51 while using the resist 53R as a mask.

The present invention provides a method for manufacturing a thin film transistor including processing of irradiating an amorphous silicon film 8 deposited on a substrate with laser light. The method comprises: a laser annealing step for forming a polysilicon film 9 including a channel region 52 by irradiating an area including a formation region of the region 52 in the film 8 with the laser light such that the area including the formation region is heated, melted, and recrystallized; and a removing step for etching off an area outside the region 52 from the polysilicon film 9. Thus, the present invention can provide a method for manufacturing a thin film transistor and a mask for use in the manufacturing method that are capable of promoting the recrystallization of the film 8 and thereby improving its electron mobility even when laser irradiation has to be performed under restricted irradiation conditions.

The present invention involves an array substrate structure and a manufacturing method of an array substrate. The manufacturing method of an array substrate, which comprises: Step 1, a substrate is provided, a first metal layer is manufactured on the substrate, and the first metal layer is patterned with a first photo-mask, to manufacture a gate electrode. Step 2, a gate insulating layer is manufactured on the substrate; an active layer is manufactured with a second photo-mask. Step 3, a first via is formed in the gate insulating layer corresponding to the first metal layer with a third photo-mask. Step 4, a second metal layer is manufactured on the gate insulating layer, the second metal layer is patterned with a fourth photo-mask, to manufacture source/drain electrodes, and a second via is formed on where corresponding to the active layer, the first metal layer and the second metal layer are connected at the first via. Step 5, a pixel electrode is manufactured with a fifth photo-mask, the pixel electrode and the source/drain electrodes are directly connected at the second via; the second metal layer is covered and protected by the pixel electrode. The present invention also provides a corresponding array substrate structure. The invention can enhance the aperture ratio of the pixel at high-resolution and the display effect and quality of the liquid crystal display and improve the electrical characteristics of the panel.

A mask plate is provided. The mask plate includes a first transparent substrate. A first transparent electrode, an electrochromic layer and a second transparent electrode are arranged sequentially on the first transparent substrate. The first transparent electrode is configured to be selectively powered so as to form energized regions with different shapes. A method for manufacturing the mask plate, a device including the mask plate, and a method for using the mask plate are further provided.

A display device includes: a first substrate; a gate line on the first substrate, where the gate line extends in a first direction; a data line on the first substrate, where the data line extends in a second direction which intersects the first direction; a thin film transistor connected to the gate line and the data line; a passivation layer on the gate line, the data line and the thin film transistor, where the passivation layer includes a recessed portion; a light blocking portion on the recessed portion of the passivation layer; a main column spacer which protrudes upwardly from the light blocking portion; and a sub-column spacer which protrudes upwardly from the light blocking portion, where the sub-column spacer is spaced apart from the main column spacer.

The present disclosure proposes a method of fabricating a color filter. The method includes: forming a permeable film on a glass substrate and drying the permeable film; and covering a black mask with a first hollow area, a red mask with a second hollow area, a green mask with a third hollow area, and a blue mask with a fourth hollow area on the dried permeable film successively, and only one of the four masks being covered each time; putting the permeable film covered by the masks into a particle solution corresponding to a respective color successively for forming the color filter comprising a black shielding area, a red area, a green area, and a blue area. The color filter is fabricated in a simpler manufacturing process. The thickness of the black shielding area of the color filter is accordance to the thickness of the RGB primary color area.