A method for manufacturing an array substrate is provided. The array substrate, by providing a black matrix and a color resist layer on the array substrate and providing the color resist layer on the TFT layer, prevents bad influences on the color resist layer caused by a high temperature TFT process so as to provide a liquid crystal panel with improved displaying quality. The method includes, firstly, forming a black matrix on a substrate, and secondly, implementing a TFT manufacture process on the black matrix, and then forming a color resist layer after the TFT manufacture process. Accordingly, forming both the black matrix and the color resist layer on the array substrate can be achieved, where the color resist layer is formed after the TFT manufacture process to prevent bad phenomenon caused by the high temperature of the TFT process.

A method for manufacturing an array substrate is provided. The array substrate, by providing a black matrix and a color resist layer on the array substrate and providing the color resist layer on the TFT layer, prevents bad influences on the color resist layer caused by a high temperature TFT process so as to provide a liquid crystal panel with improved displaying quality. The method includes, firstly, forming a black matrix on a substrate, and secondly, implementing a TFT manufacture process on the black matrix, and then forming a color resist layer after the TFT manufacture process. Accordingly, forming both the black matrix and the color resist layer on the array substrate can be achieved, where the color resist layer is formed after the TFT manufacture process to prevent bad phenomenon caused by the high temperature of the TFT process.

The present disclosure discloses an array substrate, a display device and manufacturing methods thereof. The array substrate comprises: a base, a gate metal layer, an active layer, a source/drain metal layer, and a pixel electrode layer, wherein the array substrate has a storage capacitor region; in the storage capacitor region, the gate metal layer, the active layer, the source/drain metal layer and the pixel electrode layer comprise respective patterns; wherein, the projections of the gate metal layer storage pattern, the active layer storage pattern, the source/drain metal layer storage pattern, and the pixel electrode layer storage pattern on the base at least partially overlap, and the pixel electrode layer storage pattern is electrically connected to the gate metal layer storage pattern to form a first electrode of the storage capacitor, the active layer storage pattern is electrically connected to the source/drain metal layer storage pattern to form a second electrode.

The present disclosure discloses an array substrate, a display device and manufacturing methods thereof. The array substrate comprises: a base, a gate metal layer, an active layer, a source/drain metal layer, and a pixel electrode layer, wherein the array substrate has a storage capacitor region; in the storage capacitor region, the gate metal layer, the active layer, the source/drain metal layer and the pixel electrode layer comprise respective patterns; wherein, the projections of the gate metal layer storage pattern, the active layer storage pattern, the source/drain metal layer storage pattern, and the pixel electrode layer storage pattern on the base at least partially overlap, and the pixel electrode layer storage pattern is electrically connected to the gate metal layer storage pattern to form a first electrode of the storage capacitor, the active layer storage pattern is electrically connected to the source/drain metal layer storage pattern to form a second electrode.

The disclosure provides a manufacturing method for COA substrate: utilizing PEDOT, PProDOT or PEDOT derivatives with or without doping with graphene, or PProDOT derivatives replaces traditional ITO to be conductive materials of pixel electrodes; quantum dots can be modified by ProDOT derivatives or EDOT derivatives which including carboxyl group, and quantum dot color filters of red filter layers, green filter layer and blue filters layers comprised on the TFT substrate are formed by the method of electric chemical deposition based on a property of the aforementioned two being able to polymerize under influences of electric field and pixel electrode patterns on the TFT substrate. Therefore, zero waste can be achieved in quantum dots, a usage of quantum dots can be decreased, indium usage can be decreased, researching and development cost can be reduced, and the circumstances can be protected, furthermore, the QDs color film having the better bonding strength bonds the counter electrode layer through chemical bond, and avoids adverse results as a peel is caused by insufficient bonding strength between photoresist and substrate.

The disclosure provides a manufacturing method for COA substrate: utilizing PEDOT, PProDOT or PEDOT derivatives with or without doping with graphene, or PProDOT derivatives replaces traditional ITO to be conductive materials of pixel electrodes; quantum dots can be modified by ProDOT derivatives or EDOT derivatives which including carboxyl group, and quantum dot color filters of red filter layers, green filter layer and blue filters layers comprised on the TFT substrate are formed by the method of electric chemical deposition based on a property of the aforementioned two being able to polymerize under influences of electric field and pixel electrode patterns on the TFT substrate. Therefore, zero waste can be achieved in quantum dots, a usage of quantum dots can be decreased, indium usage can be decreased, researching and development cost can be reduced, and the circumstances can be protected, furthermore, the QDs color film having the better bonding strength bonds the counter electrode layer through chemical bond, and avoids adverse results as a peel is caused by insufficient bonding strength between photoresist and substrate.

The present invention provides a display panel and a manufacture method thereof. By locating the matrix electrode corresponding to the black matrix on one side of the color film substrate, which is close to the liquid crystal layer, and because the matrix electrode is coupled to the common electrode signal, no voltage difference exists between the matrix electrode and the common electrode, and no matter in condition of being electrified or not electrified, the liquid crystal layer between the matrix electrode and the common electrode of the array substrate is not orientated and constantly appears in an opaque state so that no interference generates to light between adjacent pixels of the panel to eliminate the large view angle color washout of the panel and to improve the display quality of the LTPS display panel.

The present invention provides a display panel and a manufacture method thereof. By locating the matrix electrode corresponding to the black matrix on one side of the color film substrate, which is close to the liquid crystal layer, and because the matrix electrode is coupled to the common electrode signal, no voltage difference exists between the matrix electrode and the common electrode, and no matter in condition of being electrified or not electrified, the liquid crystal layer between the matrix electrode and the common electrode of the array substrate is not orientated and constantly appears in an opaque state so that no interference generates to light between adjacent pixels of the panel to eliminate the large view angle color washout of the panel and to improve the display quality of the LTPS display panel.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.