Patent classifications
G05F3/26
Seamless DCM-PFM transition for single pulse operation in DC-DC converters
A converter operable to convert an input voltage at an input node to an output voltage at an output node coupled to a load by switching on and off a transistor at a switching frequency, the converter comprising: an error amplifier circuit having a first input coupled to a reference voltage, a second input coupled to the output node through a resistive divider, a first output operable to output a control current and a second output operable to output a current equivalent to the control current; a peak current comparator circuit having a first input coupled to the second output of the error amplifier circuit, a second input and an output, the second input is coupled to the input node through an inductor; an off-time timer circuit having an input coupled to the first output of the error amplifier circuit and an output, the off-time timer circuit operable to set the switching frequency based on the control current; and a control circuit having a first input coupled to the output of the peak current comparator circuit, a second input coupled to the output of the off-time timer circuit and an output coupled to a control terminal of the transistor.
SUPPLY-GLITCH-TOLERANT REGULATOR
A supply-glitch-tolerant voltage regulator includes a regulated voltage node and an output transistor having a source terminal, a gate terminal, and a drain terminal. The source terminal is coupled to the regulated voltage node. The supply-glitch-tolerant voltage regulator includes a first current generator coupled between a first node and a first power supply node. The supply-glitch-tolerant voltage regulator includes a second current generator coupled between the first node and a second power supply node. The supply-glitch-tolerant voltage regulator includes a feedback circuit coupled to the first current generator and the second current generator and is configured to adjust a voltage on the first node based on a reference voltage and a voltage level on the regulated voltage node. The supply-glitch-tolerant voltage regulator includes a diode coupled between the drain terminal and the first power supply node and a resistor coupled between the gate terminal and the first node.
Image sensing device and operating method thereof
An image sensing device and an operating method thereof. The image sensing device includes a ramp signal generation circuit suitable for generating a ramp signal which corresponds to an analog gain, based on a main bias voltage, a cascode bias voltage and a plurality of ramp code signals, a bias voltage generation circuit suitable for generating the main bias voltage and the cascode bias voltage according to the analog gain, and a boost circuit suitable for boosting an output terminal of the cascode bias voltage according to the analog gain.
Adaptive switch biasing scheme for digital-to-analog converter (DAC) performance enhancement
Methods and apparatus for adaptively generating a reference voltage (V.sub.REF) for biasing a switch driver and corresponding switch in a digital-to-analog converter (DAC). The adaptive biasing scheme may be capable of tracking process, voltage, and temperature (PVT) of the DAC. An example DAC generally includes a plurality of DAC cells, each DAC cell comprising a current source, a switch coupled in series with the current source, and a switch driver coupled to a control input of the switch, the switch driver being configured to receive power from a first power supply rail referenced to a reference potential node; a regulation circuit comprising a first transistor coupled between the reference potential node for the DAC and the switch driver in at least one of the plurality of DAC cells; and a V.sub.REF generation circuit coupled to the regulation circuit and configured to adaptively generate a V.sub.REF for the regulation circuit.
Apparatus for differential memory cells
Methods, systems, and devices for apparatus for differential memory cells are described. An apparatus may include a pair of memory cells comprising a first memory cell and a second memory cell, a word line coupled with the pair of memory cells and a plate line coupled with the pair of memory cells. The apparatus may further include a first digit line coupled with the first memory cell and a sense amplifier and a second digit line coupled with the second memory cell and the sense amplifier. The apparatus may include a select line configured to couple the first digit line and the second digit line with the sense amplifier.
CONSTANT VOLTAGE CIRCUIT
According to one embodiment, a constant voltage circuit includes: a first gain stage configured to output a first voltage amplified based on an output voltage and a reference voltage; a first transistor configured to control the output voltage based on the first voltage applied to a gate; and a second circuit configured to control a first signal based on a second voltage obtained by delaying an output timing of the output voltage and a third voltage that is based on the output voltage. In a case of the first signal being at a first logic level, a first current flows through the first gain stage, and in a case of the first signal being at a second logic level, a second current flows through the first gain stage.
SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE, AND TEMPERATURE CHARACTERISTIC ADJUSTMENT METHOD
An operational amplifier operates upon receiving supply of a first voltage and outputs a control voltage on the basis of a reference voltage. A first output transistor has a first electrode connected to a first voltage line that is a supply line for the first voltage; the first output transistor transmits a first current on the basis of the control voltage. An overcurrent protection circuit is connected to the operational amplifier, and includes a resistance unit for adjustment of a temperature coefficient.
BANDGAP AMPLIFIER BIASING AND STARTUP SCHEME
Systems and circuits include an amplifier having an output; a switching circuit coupled to the output of the amplifier to provide a bias current to bias the amplifier; first current generating circuitry coupled to the switching circuit; and second current generating circuitry coupled to the output of the amplifier and to the switching circuit. In operation, the switching circuit provides the bias current, during a first time period, in response to a first signal generated by the first current generating circuitry, and provides the bias current, during a second time period, after the first time period, in response to a second signal generated by the second current generating circuitry.
MULTI-SEGMENT FET GATE ENHANCEMENT DETECTION
In examples, an apparatus includes a FET, first and second voltage-to-current circuits, a current selection circuit, and a comparator. The FET has first and second segments. The first segment has a first gate coupled to the first voltage-to-current circuit, a first source, and a first drain. The second segment has a second gate coupled to the second voltage-to-current circuit, a second source coupled to the first source, and a second drain coupled to the first drain. The current selection circuit has a current selection circuit output and first and second current selection inputs. The first current selection circuit input is coupled to the first voltage-to-current circuit. The second current selection circuit input is coupled to the second voltage-to-current circuit. The comparator has a comparator output and first and second comparator inputs, the first comparator input is coupled to the current selection circuit output.
DRIVER CIRCUITRY
The present disclosure relates to circuitry comprising: digital circuitry configured to generate a digital output signal; and monitoring circuitry configured to monitor a supply voltage to the digital circuitry and to output a control signal for controlling operation of the digital circuitry, wherein the control signal is based on the supply voltage.