A device comprises an electronic data memory and a control unit configured to store a bit sequence in the electronic data memory as a stored bit sequence. The control unit is configured to check the stored bit sequence for bit errors, to generate error correction information having information about a correct bit value in the stored bit sequence, and to store the error correction information.

Methods, systems, and devices for spare substitution in a memory system are described. A controller may, as part of a background operation, assign a spare bit to replace a bit of a code word and save an indication of the spare bit assignment in a memory array. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) within a memory medium that retains the code word. An MSR corresponding to the bit to be replaced may include a quantity of erroneous bits relative to a threshold. The controller may, during a read operation, identify the spare bit in a first portion of the code word, determine the bit to be replaced based on accessing the memory array, and replace the bit with the spare bit concurrently with receiving a second portion of the code word.

A memory system includes: a first error detection circuit suitable for generating a first error detection code using host data and a host address which are transferred from a host; a second error detection circuit suitable for generating a second error detection code using system data including one or more host data, a logical address corresponding to one or more host addresses, a physical address corresponding to the logical address and one or more first error detection codes; a third error detection code suitable for generating a third error detection code using the system data, the one or more first error detection codes and the second error detection code; and a first memory suitable for storing the system data, the one or more first error detection codes, the second error detection code and the third error detection code.

Methods, systems, and devices for error control for content-addressable memory (CAM) are described. A CAM may store bit vectors as a set of subvectors, which each subvector stored in an independent aspect of the CAM, such as in a separate column or array of memory cells within the CAM. The CAM may similarly segment a queried input bit vector and identify, for each resulting input subvector, whether a matching subvector is stored by the CAM. The CAM may identify a match for the input bit vector when the number of matching subvectors satisfies a threshold. The CAM may validate a match based on comparing a stored bit vector corresponding to the identified match to the input bit vector. The stored bit vector may undergo error correction and may be stored in the CAM or another memory array, such as a dynamic random access memory (DRAM) array.

A memory control circuit stores codewords in a memory module configured to limit errors to one wire of a memory interface. A codeword includes a first block with a first data portion and a second block with a second data portion. An error correction code symbol in the second block is used to locate and correct errors in the second block. Some bits of the first block are repurposed as metadata. The remaining bits are used as parity bits for detecting errors in the first block. The second block is merged with the first block before being stored to memory and demerged from the first block in a memory read operation. Demerging causes errors in the first block to create errors in a corresponding location in the second block. The location of errors found in the second block is used to locate and correct parity errors in the first block.

Systems, apparatuses, and methods related to configurable media structure are described. A memory device can be configured to boot up in a variety of configurations. The variety of configurations can include using the memory device for persistent memory storage, for non-persistent memory storage, etc. For instance, an apparatus can include a first memory array and a second memory array. The apparatus can include a memory controller coupled to the first memory array and the second memory array. The second memory array can be configured to store at least two boot images. The first memory array can be configured to operate based on which of the at least two boot images is used.

A Processing-In-Memory (PIM) device includes a MAC operator, a first storage region and an error correction code (ECC) logic circuit. The MAC operator performs MAC operation of first data and second data. The first storage region provides the first data to the MAC operator. The error correction code (ECC) logic circuit transmit first encoded data to the first storage region by performing a first ECC encoding operation on the first data. The error correction code (ECC) logic circuit transmit first decoded data generated by performing a first ECC decoding operation of the first encoded data transmitted from the first storage region to the MAC operator. The error correction code (ECC) logic circuit generates an error calculation result signal and transmit the an error calculation result signal to the MAC operator when the number of erroneous bits detected in the first ECC decoding operation exceed an error correction capability.

Described are a system, method, and computer program product for generating a data storage server distribution pattern. The method includes determining a set of servers and raw data to be stored. The method also includes transforming the raw data according to an error-correcting code scheme to produce distributable data. The method further includes determining a server reliability of each server in the set of servers. The method further includes generating the data storage server distribution pattern based on maximizing a system reliability relative to maximizing a system entropy. System reliability may be based on a minimum reliability of the set of servers, and system entropy may be based on a cumulated information entropy of each server of the set of servers. The method further includes distributing the distributable data to be stored across at least two servers of the set of servers according to the data storage server distribution pattern.

A double data rate dual-in-line memory module (DDR DIMM), a memory system and an operation method thereof using a data buffer for error correction are disclosed. In an example, the DDR DIMM includes a first channel including a first group of DRAM chips and a first data buffer corresponding to the first group of DRAM chips; wherein: the first data buffer is configured to obtain all write data signals input to the first channel, encode write data of all the write data signals to generate a first ECC, and send the first ECC and the write data to the first group of DRAM chips in a write operation. The disclosure can realize excellent error detection and error correction within the memory module and can greatly reduce bit error rate of the entire memory module.

Systems, methods, and apparatus for error signaling on a serial bus are described. An apparatus includes a bus interface configured to couple the apparatus to a serial bus, a phase-differential decoder configured to decode data from transitions between pairs of symbols in a sequence of symbols received from the serial bus, each symbol being representative of signaling state of the serial bus, and a processor configured to detect an indicator of an error signaling window in signaling state of two wires of the serial bus, the indicator of the error signaling window corresponding to a prohibited combination of symbols or a delay in control signaling, signaling an error through the bus interface during the error signaling window when an error is detected in the sequence of symbols or in timing of the indicator of the error signaling window.