Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

An error correcting method of a memory system includes: reading data and an error correction code from a plurality of memory chips; correcting an error of the data based on the error correction code; determining whether or not a miscorrection occurs in the correcting of the error of the data; designating one memory chip among the plurality of the memory chips as a chip-killed memory chip when a miscorrection occurs; re-correcting the error of the data based on the error correction code in consideration of the designated chip-killed memory chip; and re-determining whether a miscorrection occurs in the re-correcting of the error of the data.

A device with error correction is provided. The device includes a plurality of memory cells, and reference read write circuit, a plurality of sense amplifiers, and an error-correction code control block. The reference read write circuit is configured to generate a reference voltage in response to data stored in at least one of the plurality of memory cells. A plurality of sense amplifiers are each coupled to a respective memory cell of the plurality of memory cells. An error-correction code (ECC) control block may output an error signal when the ECC control block detects that it is unable to correct error data in one or more respective memory cells. The reference read write circuit may overwrite data in the at least one of the plurality of memory cells in response to the error signal.

A device with error correction is provided. The device includes a plurality of memory cells, and reference read write circuit, a plurality of sense amplifiers, and an error-correction code control block. The reference read write circuit is configured to generate a reference voltage in response to data stored in at least one of the plurality of memory cells. A plurality of sense amplifiers are each coupled to a respective memory cell of the plurality of memory cells. An error-correction code (ECC) control block may output an error signal when the ECC control block detects that it is unable to correct error data in one or more respective memory cells. The reference read write circuit may overwrite data in the at least one of the plurality of memory cells in response to the error signal.

A method for use in a relay unit includes receiving a dispersed storage error encoded data slice, and obtaining a current routing path associated with it. A predicted performance of the current routing path is determined, and a check is performed to determine whether a predicted performance of the current routing path fails to satisfy a performance threshold. If the performance threshold is not satisfied, alternate performance information associated with one or more alternate routing paths is obtained. Based at least in part on the alternate performance information, one of the one or more alternate routing paths is selected as a new routing path. The dispersed storage error encoded data slice is transmitted via the new routing path, instead of using the current routing path previously obtained.

Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

An internal buffer caches data from a memory. A memory address conversion unit receives as input a read request from a request source. A hit determination unit determines whether or not data of any one of two or more read out candidate addresses in which payload data requested by the read request and corresponding are stored has been cached or is going to be cached in the internal buffer. When data of any one of the addresses has been cached or is going to be cached in the internal buffer, a command issue interval control unit outputs to the memory a partial read command to instruct to read data from an address other than the address of the data that has been cached or is going to be cached in the internal buffer out of the read out candidate addresses, after a predetermined delay time has elapsed.

A technique is provided for accumulating failures. A failure of a first row is detected in a group of array macros, the first row having first row address values. A mask has mask bits corresponding to each of the first row address values. The mask bits are initially in active status. A failure of a second row, having second row address values, is detected. When none of the first row address values matches the second row address values, and when mask bits are all in the active status, the array macros are determined to be bad. When at least one of the first row address values matches the second row address values, mask bits that correspond to at least one of the first row address values that match are kept in active status, and mask bits that correspond to non-matching first address values are set to inactive status.

A device with error correction is provided. The device includes a plurality of memory cells, and reference read write circuit, a plurality of sense amplifiers, and an error-correction code control block. The reference read write circuit is configured to generate a reference voltage in response to data stored in at least one of the plurality of memory cells. A plurality of sense amplifiers are each coupled to a respective memory cell of the plurality of memory cells. An error-correction code (ECC) control block may output an error signal when the ECC control block detects that it is unable to correct error data in one or more respective memory cells. The reference read write circuit may overwrite data in the at least one of the plurality of memory cells in response to the error signal.

A memory cell array unit according to an embodiment of the present disclosure includes a microcontroller that performs reading and writing from and into a memory cell array using n-bit allocation memory cells on the basis of read/write control from a memory controller. When a defect is found in one of the n-bit allocation memory cells, the microcontroller writes n1-bit write data excluding data of a least significant bit among n-bit write data into n1-bit allocation memory cells excluding the defective allocation memory cell among the n-bit allocation memory cells.