Disclosed are various embodiments for improving the resiliency and performance of cluster memory. First, a computing device can submit a write request to a byte-addressable chunk of memory stored by a memory host, wherein the byte-addressable chunk of memory is read-only. Then, the computing device can determine that a page-fault occurred in response to the write request. Next, the computing device can copy a page associated with the write request from the byte-addressable chunk of memory to the memory of the computing device. Subsequently, the computing device can free the page from the memory host. Then, the computing device can update a page table entry for the page to refer to a location of the page in the memory of the computing device.

A method includes adding new storage capacity to a data storage system, which has a pre-existing storage capacity. The method further includes rebalancing data from the pre-existing storage capacity to the new storage capacity in connection with a non-rebalancing operation performed on the pre-existing storage capacity.

A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine, a refresh control circuit, a scrubbing control circuit and a control logic circuit. The refresh control circuit generates refresh row addresses for refreshing a memory region on memory cell rows in response to a first command received from a memory controller. The scrubbing control circuit counts the refresh row addresses and generates a scrubbing address for performing a scrubbing operation on a first memory cell row of the memory cell rows whenever the scrubbing control circuit counts N refresh row addresses of the refresh row addresses. The ECC engine reads first data corresponding to a first codeword, from at least one sub-page in the first memory cell row, corrects at least one error bit in the first codeword and writes back the corrected first codeword in a corresponding memory location.

Disclosed are various embodiments for improving the resiliency and performance of cluster memory. First, a computing device can submit a write request to a byte-addressable chunk of memory stored by a memory host, wherein the byte-addressable chunk of memory is read-only. Then, the computing device can determine that a page-fault occurred in response to the write request. Next, the computing device can copy a page associated with the write request from the byte-addressable chunk of memory to the memory of the computing device. Subsequently, the computing device can free the page from the memory host. Then, the computing device can update a page table entry for the page to refer to a location of the page in the memory of the computing device.

In response to a determination that an error rating condition associated with a memory device is satisfied, a first error correction operation is performed at the memory device to correct one or more first errors associated with a first memory access operation at the memory device. A detection is made that at least one of a state of the memory device has changed from a first state to a second state or a behavior of the memory device has changed from a first behavior level to a second behavior level. The error rating condition is modified in view of the at least one of the second state of the memory device or the second behavior level of the memory device. In response to a determination that the modified error rating condition is satisfied, a second error correction operation is performed at the memory device to correct one or more second errors associated with a second memory access operation performed at the memory device.

An apparatus includes a memory and one or more processors. The memory includes multiple memory blocks. The one or more processors are configured to read at least part of data stored in a group of one or more memory blocks, the data including multiple code words of an Error Correction Code (ECC) that is decodable using one or more processing elements selected from among multiple predefined processing elements. The one or more processor are further configured to decode one or more of the code words, and identify one or more of the predefined processing elements that actually participated in decoding the respective code words, and, based on cost-values associated with the identified processing elements, the cost-values are indicative of processing latencies respectively incurred by the identified processing elements, to make a decision of whether or not to refresh the one or more memory blocks in the group.

Performing refresh operation in a memory device is provided. A refresh operation without address rotation is performed in a cell array of the memory device. Performing the refresh operation without address rotation is repeated for a predetermined number of times. After repeating performing the refresh operation with address rotation for the predetermined number of times, a refresh operation with address rotation is performed in the cell array.

A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to receive a read command form a host device, collect environment data of the memory device, decode data associated with the read command, determine a bit error rate (BER) of the decoded data, compare the BER to a threshold, and determine whether the data associated with the read command is to be relocated. The environment data includes temperature, number of program/erase cycles, amount of grown defects, number of past relocations and time since last data relocation. The controller is further configured to dynamically adjust the threshold based on the collected environment data and an amount of time that has passed since a last relocation of the read command data.

A solid state drive (SSD) employing a redundant array of independent disks (RAID) scheme includes a flash memory chip, erasable blocks in the flash memory chip, and a flash controller. The erasable blocks are configured to store flash memory pages. The flash controller is operably coupled to the flash memory chip. The flash controller is also configured to organize certain of the flash memory pages into a RAID line group and to write RAID line group membership information to each of the flash memory pages in the RAID line group.

An electronic circuit comprising an SRAM memory, a control unit, an error detection and correction module and a scrubbing module. The electronic circuit further comprises an integrated SEU monitor of the SRAM memory. The SEU monitor does not use standalone or specialized SRAM memories or particle detectors. Rather, the same SRAM memory that is used for the main operation as a storage element of the electronic circuit serves simultaneously as detector for the SEU monitor. The proposed SEU monitor enables real-time monitoring of the SEU rate in order to detect early the high radiation levels and apply appropriate hardening measures. Furthermore, a method for monitoring an SEU rate and determining permanent faults in an electronic circuit is suggested.