A memory device is set to a performance mode. Data item is received. The data item in a page of a logical unit of the memory device associated with a fault tolerant stripe is stored. A redundancy metadata update for the fault tolerant stripe is delayed until a subsequent media management operation.

A system includes a memory device storing groups of managed units and a processing device operatively coupled to the memory device. The processing device is to, during power on of the memory device, perform including: causing a read operation to be performed at a subset of a group of managed units; determining a bit error rate related to data read from the subset of the group of managed units; and in response to the bit error rate satisfying a threshold criterion, causing a rewrite of the data stored at the group of managed units.

In a method of operating a storage device including a storage controller and a nonvolatile memory, the storage device is powered on based on an activation of an external power supply voltage. An establishment of communication with a host device is waited for, based on a link signal between the storage device and the host device. Without the establishment of communication with the host device, a retention enhancement operation is performed on the storage device by entering a retention enhancement mode and by providing at least one command from the storage controller to the nonvolatile memory.

A memory device including: a memory cell array including a plurality of memory cells disposed at intersections of wordlines and bitlines; an error correction circuit configured to read data from the memory cell array and to correct an error in the read data; and an error check and scrub (ECS) circuit configured to perform a scrubbing operation on the memory cell array, wherein the ECS circuit includes: a first register configured to store an error address obtained in the scrubbing operation; and a second register configured to store a page offline address received from an external device.

An apparatus to enable people who are handicapped, especially those who are wheelchair bound, to be able to install and replace objects that are affixed near the ceiling. The apparatus includes a lower level affixed at a location within reach of a seated person and including a vertical height adjustment pole movably retained by plate at the lower level. A top plate retains a device which is positioned adjacent a ceiling. The top plate is affixed adjacent a top end of the vertical height adjustment pole. The vertical height adjustment pole is lowered to be in reach of the seated person to enable the seated person to work on the device retained on the top plate. After work on the device is completed, the vertical height adjustment pole is retained so that the top plate is adjacent a ceiling.

A computing system includes: a memory device including a memory cells; a memory controller configured to control the memory device; and a host configured to detect an occurrence of an error in a first memory cell of the memory device while performing an operation corresponding to a workload and transmit, to the memory controller, a target address corresponding to the first memory cell and a request for a test operation on adjacent memory cells that are adjacent to the first memory cell. The memory controller controls the memory device to perform the test operation on the adjacent memory cells by using at least one of a Built-In Self-Test (BIST) engine or a scrub engine based on the target address and generate memory error information including information associated with a second memory cell in which the error occurs, the second memory cell being one of the adjacent memory cells. The host controls an access to the second memory cell based on the memory error information.

A memory device of one embodiment includes memory elements which store data and parity; a first decoder which, when scrubbing of the data is performed while no external access is being made to the memory device, uses a syndrome generated from the data and the parity to correct an error of a maximum of N bits in a unit of the data; and a second decoder which, when reading of the data is performed, uses the syndrome to correct an error of a maximum of M bits in a unit of the data. The N bits represent the number of bits smaller than the N bits.

A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit, a fault address register, a scrubbing control circuit and a control logic circuit. The memory cell array includes memory cell rows. The scrubbing control circuit generates scrubbing addresses based on refresh operations performed on the memory cell array. The control logic circuit controls the ECC circuit such that the ECC circuit performs an error detection operation on a plurality of sub-pages in a first memory cell row to count a number of error occurrences, and determines whether to correct a codeword in which an error is detected based on the number of error occurrences. An uncorrected or corrected codeword is written back, and a row address of the first memory cell row may be stored in the fault address register as a row fault address based on the number of error occurrences.

A semiconductor device may include an operation control circuit configured to generate a detection signal based on an internal temperature of the semiconductor device. The semiconductor device may include an error correction circuit configured to output read data as output data with or without performing an error correction operation and with or without performing a scrub operation based on the detection signal.

A system includes a memory device having groups of managed units and a processing device coupled to the memory device. The processing device, during power on of the memory device, causes a read operation to be performed at a subset of a group of managed units and determines a bit error rate related to data read from the subset of the group of managed units. The bit error rate is a directional bit error rate resulting from an erroneously determined state compared to a programmed state that transitions between two opposing states. In response to the bit error rate satisfying a threshold criterion, the processing device causes a rewrite of the data stored at the group of managed units.