A magnetic read apparatus includes a first sensor, a shield layer, an insulating layer, a shield structure and a second sensor. The shield layer is between the first sensor and the insulating layer. The shield structure is in the down track direction from the insulating layer. The shield structure includes a magnetic seed structure, a shield pinning structure and a shield reference structure. The magnetic seed structure adjoins the shield pinning structure. The shield pinning structure is between the shield reference structure and the magnetic seed structure. The second sensor includes a free layer and a nonmagnetic spacer layer between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment. The shield reference structure includes another magnetic moment weakly coupled with the pinned magnetic moment.

A tunneling magnetoresistive (TMR) read head for magnetic tape has a tape-bearing surface (TBS) and includes a first magnetic shield, a first gap layer on the first shield, a TMR sensor on the first gap layer and recessed from the TBS, a second gap layer on the TMR sensor, a second magnetic shield on the second gap layer, and a magnetic flux guide between the first and second gap layers between the TBS and the recessed TMR sensor. The first gap layer has an insulating portion with an edge at the TBS and a non-magnetic electrically-conducting portion recessed from the TBS, with the TMR sensor located on the conductive portion. The sense current is between the two shields. An insulating isolation layer may be located between the first gap layer and the first shield layer with the sense current being between the second shield and the first gap layer.

This invention relates to structures comprising magnetic materials and conjugated molecules. The invention relates to magneto-resistive devices based on such structures. Structures and devices of the invention can be used as magnetic switches, magnetic sensors and in devices such in/as memory devices.

An apparatus according to one embodiment includes a transducer structure having: a lower shield, an upper shield above the lower shield, a current-perpendicular-to-plane sensor between the upper and lower shields, and an insulating layer between the at least one lead and the shield closest thereto. At least one lead is selected from a group including: an upper electrical lead between the sensor and the upper shield and a lower electrical lead between the sensor and the lower shield. The at least one lead is in electrical communication with the sensor. A width of one or more of the at least one lead in a cross track direction is about equal to a width of the sensor.

A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

In one general embodiment, an apparatus includes an array of magnetic transducers each having: a current-perpendicular-to-plane sensor, shields for providing magnetic shielding, and a stabilizing layered structure between at least one of the shields and the sensor. The stabilizing layered structure includes an antiferromagnetic layer, a first ferromagnetic layer adjacent the antiferromagnetic layer, a second ferromagnetic layer, and an antiparallel coupling layer between the ferromagnetic layers. A magnetization direction in the second ferromagnetic layer is opposite the magnetization direction in the first ferromagnetic layer. Each transducer also includes an electrical lead layer positioned between the sensor and the stabilizing layered structure and in electrical communication with the sensor. Each transducer also includes a spacer layer between the respective electrical lead layer and the stabilizing layered structure. A conductivity of the electrical lead layer is higher than a conductivity of the spacer layer.

According to one embodiment, a magnetic recording head includes an air bearing surface, a magnetic core including a main magnetic pole and a write shield arranged to face the main magnetic pole with a write gap, a coil, and a high-frequency oscillator provided between the main magnetic pole and the write shield in the write gap. The magnetic core includes an opposite surface facing a film surface of the high-frequency oscillator, a magnetic layer, and a nonmagnetic layer in which magnetic microparticles are dispersed. The nonmagnetic layer is provided outside the magnetic layer in at least a part of the opposite surface of the magnetic core.

A double pinned magnetoresistance element has a temporary ferromagnetic layer, two PtMn antiferromagnetic pinning layers, and two associated synthetic antiferromagnetic (SAF) pinned layer structures, the temporary ferromagnetic layer operable to improve annealing of the two PtMn antiferromagnetic pinning layers and the two associated SAFs to two different magnetic directions that are a relative ninety degrees apart.

A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.