A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.

The present disclosure generally relates to magnetic recording devices with stable magnetization. The magnetic recording device comprises a lower leading shield, an upper leading shield disposed on the lower leading shield, a main pole disposed above the upper leading shield, a trailing shield disposed above the main pole and upper leading shield, and an upper return pole disposed above the trailing shield. A first non-magnetic layer is disposed between the lower leading shield and the upper leading shield, and a second non-magnetic layer is disposed between the trailing shield and the upper return pole. The lower leading shield has a different domain state than the upper leading shield, and the trailing shield and the upper leading shield have a same domain state. The materials and thickness of the first and second non-magnetic layers result in magnetostatic coupling or anti-ferromagnetic coupling.

Embodiments of the present disclosure generally relate to a magnetic recording device comprising a magnetic recording head having a negative anisotropic magnetic (−Ku) material notch. The magnetic recording device comprises a main pole disposed at a media facing surface (MFS), a trailing shield disposed adjacent to the main pole, and a trailing gap disposed between the main pole and the trailing shield. The trailing shield comprises a hot seed layer disposed adjacent to the trailing gap, and a notch comprising a −Ku material in contact with the hot seed layer and the trailing gap. The notch is disposed adjacent to a first surface of the main pole at the MFS. The notch comprising the −Ku material results in an increased effective write magnetic field, an increased down-track field gradient due to reduced shunting from the main pole to the trailing shield, leading to an increased areal density capacity.

A lateral spin valve reader and fabrication method thereof. The method includes forming an injector, a detector and a common channel layer that extends from the injector to the detector. The method also includes forming a first channel layer between the common channel layer and at least one of the injector or the detector with the first channel layer in contact with the common channel layer, thereby providing an interface between the first channel layer and the common channel layer.

A needle magnetizing arrangement (1) comprising a controller (4) adapted to generate a first magnetic field (F) for magnetizing a needle (2), and a magnetic field sensor (5) adapted to generate a signal based on a second magnetic field (F.sub.R) of the needle (2).

A base multilayer body is made by laminating a seed layer and a buffer layer in respective order. The seed layer is an alloy layer containing tantalum (Ta) and at least one type of other metal, and having an amorphous structure or a microcrystal structure. The buffer layer is an alloy layer having a [001] plane orientation hexagonal close-packed structure and containing at least one type of a group VI metal and at least one type of a group IX metal in the periodic table. With this configuration, a magnetic layer providing a desired magnetic characteristic(s) can be laminated on the thinned base multilayer body.

A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. Above the AFM layer is an AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure. A process flow is provided for fabricating the MR sensor.

The present technology relates to a storage device that realizes both a high information retention property and a low power consumption. A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.

Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

An apparatus according to one embodiment includes an array of magnetic read transducers each having a current-perpendicular-to-plane sensor, magnetic shields on opposite sides of the sensor in an intended direction of media travel thereacross, and a stabilizing layered structure between at least one of the magnetic shields and the sensor. The stabilizing layered structure has an antiferromagnetic layer, a first ferromagnetic layer adjacent the antiferromagnetic layer, and a second ferromagnetic layer. The antiferromagnetic layer pins a magnetization direction in the first ferromagnetic layer along an antiferromagnetic polarized direction of the antiferromagnetic layer. An antiparallel coupling layer is positioned between the ferromagnetic layers such that a magnetization direction in the second ferromagnetic layer is opposite the magnetization direction in the first ferromagnetic layer.