Patent classifications
G11B5/3912
Magnetic read apparatus having multiple read sensors with reduced sensor spacing usable in two-dimensional magnetic recording applications
A magnetic read apparatus includes a first sensor, a shield layer, an insulating layer, a shield structure and a second sensor. The shield layer is between the first sensor and the insulating layer. The shield structure is in the down track direction from the insulating layer. The shield structure includes a magnetic seed structure, a shield pinning structure and a shield reference structure. The magnetic seed structure adjoins the shield pinning structure. The shield pinning structure is between the shield reference structure and the magnetic seed structure. The second sensor includes a free layer and a nonmagnetic spacer layer between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment. The shield reference structure includes another magnetic moment weakly coupled with the pinned magnetic moment.
Flux-guided tunneling magnetoresistive (TMR) sensor for magnetic tape with reduced likelihood of electrical shorting
A tunneling magnetoresistive (TMR) read head for magnetic tape has a tape-bearing surface (TBS) and includes a first magnetic shield, a first gap layer on the first shield, a TMR sensor on the first gap layer and recessed from the TBS, a second gap layer on the TMR sensor, a second magnetic shield on the second gap layer, and a magnetic flux guide between the first and second gap layers between the TBS and the recessed TMR sensor. The first gap layer has an insulating portion with an edge at the TBS and a non-magnetic electrically-conducting portion recessed from the TBS, with the TMR sensor located on the conductive portion. The sense current is between the two shields. An insulating isolation layer may be located between the first gap layer and the first shield layer with the sense current being between the second shield and the first gap layer.
Apparatuses and methods for providing thin shields in a multiple sensor array
Apparatuses and methods for providing thin shields in a multiple sensor array are provided. One such apparatus is a magnetic read transducer including a first read sensor, a second read sensor, and a shield assembly positioned between the first read sensor and the second read sensor at an air bearing surface (ABS) of the magnetic read transducer, the shield assembly including a first shield layer assembly having a first footprint with a first area, and a second shield layer assembly having a second footprint with a second area, where the second area is greater than the first area.
Magnetic read head having a CPP MR sensor electrically isolated from a top shield
An apparatus according to one embodiment includes a transducer structure having: a lower shield, an upper shield above the lower shield, a current-perpendicular-to-plane sensor between the upper and lower shields, and an insulating layer between the at least one lead and the shield closest thereto. At least one lead is selected from a group including: an upper electrical lead between the sensor and the upper shield and a lower electrical lead between the sensor and the lower shield. The at least one lead is in electrical communication with the sensor. A width of one or more of the at least one lead in a cross track direction is about equal to a width of the sensor.
Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor
In one general embodiment, an apparatus includes an array of magnetic transducers each having: a current-perpendicular-to-plane sensor, shields for providing magnetic shielding, and a stabilizing layered structure between at least one of the shields and the sensor. The stabilizing layered structure includes an antiferromagnetic layer, a first ferromagnetic layer adjacent the antiferromagnetic layer, a second ferromagnetic layer, and an antiparallel coupling layer between the ferromagnetic layers. A magnetization direction in the second ferromagnetic layer is opposite the magnetization direction in the first ferromagnetic layer. Each transducer also includes an electrical lead layer positioned between the sensor and the stabilizing layered structure and in electrical communication with the sensor. Each transducer also includes a spacer layer between the respective electrical lead layer and the stabilizing layered structure. A conductivity of the electrical lead layer is higher than a conductivity of the spacer layer.
MAGNETIC RECORDING AND REPRODUCING DEVICE AND MAGNETIC REPRODUCING METHOD
According to one embodiment, a magnetic recording and reproducing device includes a magnetic recording medium, a magnetic head, and a processor. The magnetic head includes a first reproducing element portion and a second reproducing element portion. The processor is configured to acquire a first signal and a second signal, and to output an output signal according to either one of the first signal and the second signal. The first signal is obtained by reproducing information recorded on a first recording region by the first reproducing element portion. The second signal is obtained by reproducing the information recorded on the first recording region by the second reproducing element portion.
MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SIDE SHIELD INTEGRATED WITH UPPER SHIELD
A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction. The side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction.
Magnetic read sensors and related methods having a rear hard bias and no AFM layer
Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A magnetic read head includes a first pinning layer magnetically oriented in a first direction, and a second pinning layer formed above the first pinning layer and magnetically oriented in a second direction that is opposite of the first direction. The magnetic read head includes a rear hard bias disposed outwardly of one or more of the first pinning layer relative or the second pinning layer. The rear hard bias is magnetically oriented to generate a magnetic field in a bias direction. The bias direction points in the same direction as the first direction or the second direction. The magnetic read head does not include an antiferromagnetic (AFM) layer between a lower shield and an upper shield.
TUNNEL MAGNETORESISTIVE SENSOR HAVING CONDUCTIVE CERAMIC LAYERS
An apparatus according to one embodiment includes a sensor having an active region, a magnetic shield adjacent the active region, and a spacer between the active region and the magnetic shield. The spacer includes an electrically conductive ceramic layer. An apparatus according to another embodiment includes a sensor having an active tunnel magnetoresistive region, a magnetic shield adjacent the tunnel magnetoresistive region, and a spacer between the tunnel magnetoresistive region and the magnetic shields. The spacer includes an electrically conductive ceramic layer.
Thin Data Reader Cap
A data reader may have a magnetoresistive stack with a magnetically free layer decoupled from a first shield by a cap. The cap can have one or more sub-layers respectively configured with a thickness of 4 nm or less as measured parallel to a longitudinal axis of the magnetoresistive stack on an air bearing surface.