In one general approach, an apparatus includes a read transducer structure having a media facing surface. The read transducer structure has a lower shield, and an upper shield formed above the lower shield. The upper and lower shields providing magnetic shielding. A current-perpendicular-to-plane sensor is positioned between the upper and lower shields. A dielectric layer extends into one of the shields from the media facing surface. The dielectric layer extends into the one of the shields for a distance that is less than a height of the one of the shields. Preferably, a first dielectric layer extends into the lower shield from the media facing surface, and a second dielectric layer extends into the upper shield from the media facing surface.

Disclosed herein is a data storage device comprising a recording media, a slider comprising a write head having a write-field enhancement structure for recording data to the recording media, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both couple a bias voltage to a body of the slider, and carry a bias current for the write-field enhancement structure. Also disclosed herein is a data storage device comprising a slider with an embedded contact sensor, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both couple a bias voltage to a body of the slider, and provide a signal to the embedded contact sensor.

A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni.sub.γ1Al.sub.γ2X.sub.γ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3)].

A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product).

The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):

Co.sub.2Fe.sub.X.sub.(1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and and represent numbers that satisfy 2.3+, <, and 0.5<<1.9).

The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Aspects of the present disclosure generally relate to magnetic recording heads (such as write heads of data storage devices) that include multilayer structures to facilitate targeted switching and relatively low coercivity. In one or more embodiments, a magnetic recording head includes an iron-cobalt (FeCo) layer having a crystalline structure that is a cubic lattice structure, a first crystalline layer formed of a first material, and a second crystalline layer between the first crystalline layer and the FeCo layer. The second crystalline layer is formed of a second material different from the first material, and the second crystalline layer interfaces both the FeCo layer and the first crystalline layer. The crystalline structure of the FeCo layer has a texture of <100>.

Disclosed herein is a data storage device comprising a recording media, a slider comprising a write head having a write-field enhancement structure for recording data to the recording media, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both couple a bias voltage to a body of the slider, and carry a bias current for the write-field enhancement structure. Also disclosed herein is a data storage device comprising a slider with an embedded contact sensor, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both couple a bias voltage to a body of the slider, and provide a signal to the embedded contact sensor.

A microwave-assisted magnetic recording writer is disclosed wherein a heat sink is formed in a write gap (WG) and adjacent to a spin torque oscillator (STO) formed between a main pole (MP) trailing side and a trailing shield (hot seed layer). The WG comprises an electrically insulating layer with thickness of 5-80 Angstroms on the MP trailing side and STO sides. The heat sink layer may be separate coplanar layers on each STO side, or a single layer wrapping around the STO. A Ru or Cu heat sink has sufficient thermal conductivity to reduce STO temperature rise by 11% and 20%, respectively. Accordingly, the STO has longer lifetime at the same bias current density, or higher buffer head voltage is possible while maintaining STO device reliability. Each heat sink has a front side at an air bearing surface, and a stripe height (SH)to the STO SH.