An apparatus according to one embodiment includes a magnetic head having at least two tunneling magnetoresistance sensors, where a resistance of a tunnel barrier of each of the tunneling magnetoresistance sensors of the magnetic head is about 25 ohms or less, a drive mechanism for passing a magnetic medium over the magnetic head, and a controller electrically coupled to the magnetic head. In addition, the controller includes a biasing circuit, where the biasing circuit restricts a maximum voltage drop across the tunnel barrier.

An apparatus according to one embodiment includes a module having an array of first read transducers each having a tunnel valve structure and a second read transducer coupled to the array of first read transducers, the second read transducer having a tunnel valve structure. The apparatus also includes a controller, and a cable coupling the read transducers to the controller, thereby forming a plurality of circuits extending from the controller, each circuit corresponding to one of the transducers. Resistances of the circuits are about the same.

In one general embodiment, an apparatus includes a magnetic head having at least one tunneling magnetoresistance sensor. The resistance of the tunnel barrier of each tunneling magnetoresistance sensor is about 25 ohms or less. In another general embodiment, an apparatus includes a magnetic head having at least one tunneling magnetoresistance sensor. The resistivity of the tunnel barrier of each tunneling magnetoresistance sensor is less than a product of a target resistance of the tunnel barrier and an area of the tunnel barrier. The target resistance is about 25 ohms or less.

An apparatus, according to one embodiment, includes a first circuit comprising a pair of terminals coupled to a first read transducer having a tunnel valve structure and a first parallel circuit. A second circuit has a pair of terminals that are coupled to a second read transducer having a tunnel valve structure. An area of a tunnel barrier portion of the second read transducer is larger than an area of a tunnel barrier portion of the first read transducer. The terminal resistance of the first circuit is less than about five times a terminal resistance of the second circuit.

A method and system provide a magnetic transducer having an air-bearing surface (ABS). The method includes providing a first shield, a first read sensor, an antiferromagnetically coupled (AFC) shield that includes an antiferromagnet, a second read sensor and a second shield. The read sensors are between the first and second shields. The AFC shield is between the read sensors. An optional anneal for the first shield is in a magnetic field at a first angle from the ABS. Anneals for the first and second read sensors are in magnetic fields in desired first and second read sensor bias directions. The AFC shield anneal is in a magnetic field at a third angle from the ABS. The second shield anneal is in a magnetic field at a fifth angle from the ABS. The fifth angle is selected based on a thickness and a desired AFC shield bias direction for the antiferromagnet.

A magnetic read head including a first read element magnetically coupled to a bottom shield; a second read element magnetically coupled to a top shield; a magnetic shielding structure that magnetically shields the first read element from the second read element; and a first electrical contact electrically coupled to the bottom shield, a second electrical contact electrically coupled to the top shield and a third electrical contact electrically coupled to the magnetic shielding structure.

Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

An apparatus, according to one embodiment, includes: a plurality of tunnel valve read transducers arranged in an array extending along a read module. Each of the tunnel valve read transducers includes: a sensor structure having a cap layer, a free layer, a tunnel barrier layer, a reference layer and an antiferromagnetic layer, and electrically insulating layers on opposite sides of the sensor structure. Moreover, a height of the free layer measured in a direction perpendicular to a media bearing surface of the read module is less than a width of the free layer measured in a cross-track direction perpendicular to an intended direction of media travel.

In one general embodiment, an apparatus includes a magnetic head having at least one tunneling magnetoresistance sensor. The resistance of the tunnel barrier of each tunneling magnetoresistance sensor is about 25 ohms or less. In another general embodiment, an apparatus includes a magnetic head having at least one tunneling magnetoresistance sensor. The resistivity of the tunnel barrier of each tunneling magnetoresistance sensor is less than a product of a target resistance of the tunnel barrier and an area of the tunnel barrier. The target resistance is about 25 ohms or less.

An apparatus, according to one embodiment, includes a plurality of first circuits, each first circuit comprising a pair of terminals coupled to a first read transducer and a first parallel circuit. A terminal resistance of each first circuit is less than the resistance of the first read transducer thereof. A second circuit has a pair of terminals that are coupled to a second read transducer having a tunnel valve structure. An area of a tunnel barrier portion of the second read transducer is larger than an area of a tunnel barrier portion of each of the first read transducers. A resistivity of a tunnel barrier of each of the first read transducers is about the same as a resistivity of a tunnel barrier layer of the second read transducer. The terminal resistance of each first circuit is less than about five times a terminal resistance of the second circuit.