According to one embodiment, an arithmetic device includes an arithmetic circuit. The arithmetic circuit includes a memory part including a plurality of memory regions, and an arithmetic part. One of the memory regions includes a capacitance including a first terminal, and a first electrical circuit electrically connected to the first terminal and configured to output a voltage signal corresponding to a potential of the first terminal.

An example apparatus comprises an array of memory cells coupled to sensing circuitry including a first sense amplifier, a second sense amplifier, and a logical operation component. The sensing circuitry may be controlled to sense, via first sense amplifier, a data value stored in a first memory cell of the array, sense, via a second sense amplifier, a data value stored in a second memory cell of the array, and operate the logical operation component to output a logical operation result based on the data value stored in the first sense amplifier and the data value stored in the second sense amplifier.

An example apparatus comprises an array of memory cells coupled to sensing circuitry including a first sense amplifier, a second sense amplifier, and a logical operation component. The sensing circuitry may be controlled to sense, via first sense amplifier, a data value stored in a first memory cell of the array, sense, via a second sense amplifier, a data value stored in a second memory cell of the array, and operate the logical operation component to output a logical operation result based on the data value stored in the first sense amplifier and the data value stored in the second sense amplifier.

The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a memory array including a plurality of memory cells, each memory cell having an impedance that varies in accordance with a respective data value stored therein; and a tracking memory cell having an impedance based on a tracking data value stored therein; and a read circuit coupled to the memory array, the read circuit configured to determine an impedance of a selected memory cells with respect to the impedance of the tracking memory cell; read a data value stored within the selected memory cell based upon a voltage change of a signal node voltage corresponding to the impedance of the selected memory cell.

A semiconductor device with a novel structure is provided. A plurality of memory circuits, a switching circuit, and an arithmetic circuit are included. Each of the plurality of memory circuits has a function of retaining weight data and a function of outputting the weight data to a first wiring. The switching circuit has a function of switching a conduction state between any one of the plurality of first wirings and a second wiring. The arithmetic circuit has a function of performing arithmetic processing using input data and the weight data supplied to the second wiring. The memory circuits are provided in a first layer. The switching circuit and the arithmetic circuit are provided in a second layer. The first layer is provided in a layer different from the second layer.

Since power source voltages are different depending on circuits used for devices, a circuit for outputting at least two or more power sources is additionally prepared. An object is to unify outputs of the power source voltages. A transistor using an oxide semiconductor is provided in such a manner that electrical charge is retained in a node where the transistor and a capacitor are electrically connected to each other, a reset signal is applied to a gate of the transistor to switch the states of the transistor from off to on, and the node is reset when the transistor is on. A circuit configuration that generates and utilizes a potential higher than or equal to a potential of a single power source can be achieved.

Since power source voltages are different depending on circuits used for devices, a circuit for outputting at least two or more power sources is additionally prepared. An object is to unify outputs of the power source voltages. A transistor using an oxide semiconductor is provided in such a manner that electrical charge is retained in a node where the transistor and a capacitor are electrically connected to each other, a reset signal is applied to a gate of the transistor to switch the states of the transistor from off to on, and the node is reset when the transistor is on. A circuit configuration that generates and utilizes a potential higher than or equal to a potential of a single power source can be achieved.

A method includes forming a first transistor, a second transistor, a third transistor, and a fourth transistor over a substrate, wherein at least the second and third transistors include ferroelectric materials; forming an interlayer dielectric (ILD) layer over the first to fourth transistors; forming a first metal line over the ILD layer to interconnect drains of the second and third transistors and a gate of the fourth transistor; forming a second metal line over the ILD layer to interconnect a drain of the first transistor and gates of the second and third transistors; forming a write word line over the ILD layer and electrically connected to a gate of the first transistor but electrically isolated from the fourth transistor; forming a word line over the ILD layer and electrically connected to a source of the first transistor; and forming a bit line electrically connected to the fourth transistor.

A method includes forming a first transistor, a second transistor, a third transistor, and a fourth transistor over a substrate, wherein at least the second and third transistors include ferroelectric materials; forming an interlayer dielectric (ILD) layer over the first to fourth transistors; forming a first metal line over the ILD layer to interconnect drains of the second and third transistors and a gate of the fourth transistor; forming a second metal line over the ILD layer to interconnect a drain of the first transistor and gates of the second and third transistors; forming a write word line over the ILD layer and electrically connected to a gate of the first transistor but electrically isolated from the fourth transistor; forming a word line over the ILD layer and electrically connected to a source of the first transistor; and forming a bit line electrically connected to the fourth transistor.

The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a memory array including a plurality of memory cells, each memory cell having an impedance that varies in accordance with a respective data value stored therein; and a tracking memory cell having an impedance based on a tracking data value stored therein; and a read circuit coupled to the memory array, the read circuit configured to determine an impedance of a selected memory cells with respect to the impedance of the tracking memory cell; read a data value stored within the selected memory cell based upon a voltage change of a signal node voltage corresponding to the impedance of the selected memory cell.