A first level buffer chip gates a target second level buffer chip according to a preset mapping relationship, a first chip select signal, and a first higher-order address signal, and forwards a memory access instruction and a lower-order address signal received from a memory controller to the target second level buffer chip. The target second level buffer chip determines a target memory module according to a second chip select signal and a delayed address signal obtained by delay processing on a second higher-order address signal, determines a target memory chip according to the lower-order address signal, acquires target data from the target memory chip according to the memory access instruction, and returns the target data to the memory controller. A cascading manner of a system memory is changed to a tree-like topological form, which avoids a protocol conversion problem and reduces the memory access time.

A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.

Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.

Techniques perform data writing. Such techniques involve: in response to receiving a first write request, searching a cache for a target address associated with the first write request; in response to missing of the target address in the cache, determining a page usage rate in the cache; and in response to determining that the page usage rate exceeds an upper threshold, performing the first write request with a first available page in the cache. The first available page is reclaimed, independent of a refresh cycle of the cache, in response to completing the performing of the first write request.

Memory devices, systems, and associated methods with per die temperature-compensated refresh control, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory cells and a sensor configured to measure a temperature of the memory device. The memory device determines a frequency at which it is receiving refresh commands. The memory device is further configured to skip refresh operations of the memory cells based, at least in part, on the determination and on the temperature of the memory device.

A data access system including a processor and a storage system including a main memory and a cache module. The cache module includes a FLC controller and a cache. The cache is configured as a FLC to be accessed prior to accessing the main memory. The processor is coupled to levels of cache separate from the FLC. The processor generates, in response to data required by the processor not being in the levels of cache, a physical address corresponding to a physical location in the storage system. The FLC controller generates a virtual address based on the physical address. The virtual address corresponds to a physical location within the FLC or the main memory. The cache module causes, in response to the virtual address not corresponding to the physical location within the FLC, the data required by the processor to be retrieved from the main memory.

The present disclosure includes apparatuses and methods related to determining trim settings on a memory device. An example apparatus can determine a set of trim settings for the array of memory cells based on the operational characteristics of the array of memory cells, wherein the set of trim settings are associated with desired operational characteristics for the array of memory cells.

Hardware-assisted Dynamic Random Access Memory (DRAM) row merging, including: identifying, by a memory controller, in a DRAM module, a plurality of rows storing identical data; storing, in a mapping table, data mapping one or more rows of the plurality of rows to another row; and excluding the one or more rows from a refresh the DRAM module.

Apparatuses including threshold voltage compensated sense amplifiers and methods for compensating same are disclosed. An example threshold voltage compensated sense amplifier according to the disclosure includes circuits, such as a first transistor having a first conductivity type coupled to a first node and a second node; a second transistor having a second conductivity type coupled to the first node and at third node; a plurality of transistors coupled to the second node and further configured to receive a power supply voltage; and a control circuit configured to provide a plurality of control signals to the plurality of transistors. The control circuit provides the plurality of control signals indicative of a first drive strength in a first memory operation and further provides the plurality of signals indicative of a second drive strength in a second memory operation.

A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.