Methods, systems, and devices for techniques for memory error correction are described. A memory system may support a refresh with error correction code (ECC) operation. The refresh with ECC operation may be indicated in a command from a host device to a memory device, or the memory device may support executing the refresh with ECC operation autonomously, for example as part of a self-refresh operation. The refresh with ECC operation may cause the memory system to, as part of a refresh operation for a row of a memory array, perform an error correction operation on at least a portion of the row. The error correction operation may correct bit errors in a set of data before an additional bit of the set of data is corrupted. The address of the portion of the row may be determined using one or more counters associated with an ECC patrol block.

A semiconductor memory apparatus includes a first memory cell array, a second memory cell array, and a hammering control circuit. The first memory cell array includes a first row hammer memory cell. The second memory cell array includes a second row hammer memory cell. The hammering control circuit controls the number of active operations on a first word line to be stored in the second row hammer memory cell and controls the number of active operations on a second word line to be stored in the first row hammer memory cell.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor word line characteristics. In one embodiment, the memory device includes a memory array including a word line (e.g., a local word line) and a word line driver coupled thereto. When the memory device activates the word line driver, the memory device may generate a diagnostic signal in response to the word line voltage reaching a threshold. Further, the memory device may generate a reference signal to compare the diagnostic signal with the reference signal. In some cases, the memory device may generate an alert signal based on comparing the diagnostic signal with the reference signal if the diagnostic signal indicates a symptom of degradation in the word line characteristics. The memory device may implement certain preventive and/or precautionary measures upon detecting the symptom.

According to one embodiment, a memory system includes a non-volatile memory and a memory controller. The non-volatile memory includes a plurality of groups, each including a plurality of memory cells. The memory controller is configured to determine whether to execute a refresh process for a first group based on whether a first temperature in a write process for the first group and a second temperature after the write process for the first group satisfy a first condition.

An apparatus includes a cache controller, the cache controller to receive, from a requestor, a memory access request referencing a memory address of a memory. The cache controller may identify a cache entry associated with the memory address, and responsive to determining that a first data item stored in the cache entry matches a data pattern indicating cache entry invalidity, read a second data item from a memory location identified by the memory address. The cache controller may then return, to the requestor, a response comprising the second data item.

First signaling indicative of instructions to enter a self-refresh (SREF) mode can be received concurrently by a plurality of memory dies. Responsive to a memory die of the plurality of memory dies entering the SREF mode, self-refreshing of memory banks of the memory die can be delayed, at the memory die and based on fuse states of an array of fuses of the memory die, an amount of time relative to receipt of the signaling by the memory die. Delaying self-refreshing of memory banks of memory dies in a staggered, or asynchronous, manner can evenly distribute power consumption of the memory dies so that the likelihood of an associated power spike is reduced or eliminated.

A system on chip (SoC) includes an internal read-only memory (ROM) configured to store a first boot loader; a first internal static random access memory (SRAM) configured to receive a second boot loader output from a booting device, store the second boot loader, and perform a booting sequence according to control of the first boot loader; a second internal SRAM configured to receive a third boot loader output from the booting device, store the third boot loader, and perform a wake-up sequence according to control of the first boot loader; and a dynamic random access memory (DRAM) controller configured to load an operating system (OS) from the booting device into a DRAM according to control of the second boot loader.

A method and memory device of controlling a plurality of low power states are provided. The method includes: entering a low power mode state, in which memory cell rows of the memory device are refreshed and power consumption is lower than in a self-refresh mode state, in response to a low power state entry command; and exiting the low power mode state based on a low power mode exit latency time that is set in a mode register of the memory device or at least one of an alarm signal and a low power mode exit command.

Apparatuses and methods for calculating targeted refresh addresses may include circuitry that may be used to calculate victim row addresses having a variety of spatial relationships to an aggressor row. The spatial relationship of the victim row addresses calculated by the circuitry may be based, at least in part, on states of control signals provided to the circuitry. That is, the circuitry may be used to calculate the different victim row addresses by changing the states of the control signals.

An arbitration control circuit in a pseudo-static random access memory (PSRAM) device includes a first arbiter circuit and a second arbiter circuit. The first arbiter circuit receives a normal access request signal and a refresh access request signal and generates a first output signal in response to a logical operation to arbitrate between the normal access reqeuest signal and the refresh access request signal. The second arbiter circuit configured to receive the first output signal and a delayed signal of the first output signal, and to generate a second output signal in response to a logical operation of the first output signal and the delayed signal. The second output signal has a first logical state indicative of granting the read or write access request and a second logical state indicative of granting the refresh access request to the memory cells of the PSRAM device.