Methods, apparatuses, and systems for staggering refresh operations to memory arrays in different dies of a three-dimensional stacked (3DS) memory device are described. A 3DS memory device may include one die or layer of that controls or regulates commands, including refresh commands, to other dies or layers of the memory device. For example, one die of the 3DS memory may delay a refresh command when issuing the multiple concurrent memory refreshes would cause some problematic performance condition, such as high peak current, within the memory device.

Methods, apparatuses, and systems for staggering refresh operations to memory arrays in different dies of a three-dimensional stacked (3DS) memory device are described. A 3DS memory device may include one die or layer of that controls or regulates commands, including refresh commands, to other dies or layers of the memory device. For example, one die of the 3DS memory may delay a refresh command when issuing the multiple concurrent memory refreshes would cause some problematic performance condition, such as high peak current, within the memory device.

A memory apparatus embedded with a computing function and an operation method thereof are provided. The memory apparatus includes a memory array, a plurality of data flow controllers, a plurality of computation circuits, a data bus, and a control logic circuit. The memory array includes a plurality of block groups having a plurality of memory blocks. Each of the data flow controllers selects a transmission path of data of each memory block according to a corresponding one of the data flow control signals. In a computation mode, the computation circuit computes first data from the corresponding memory block. In a normal mode, second data is transmitted between the data bus and the corresponding memory block. The data flow controller transmits the first data from the corresponding memory block to the computation circuit according to the data flow control signal provided by the control logic circuit to compute the first data.

A fuse element, a semiconductor device, and a method for activating a backup unit are provided. The fuse element includes an active area, which includes a source region and a drain region beside the source region, a gate region disposed on the active area, and a shallow trench isolation (STI) structure surrounding the active area. In addition, the drain region includes a terminal configured to receive a stress voltage, such that a conductive path is established through the drain region to the source region.

A fuse element, a semiconductor device, and a method for activating a backup unit are provided. The fuse element includes an active area, which includes a source region and a drain region beside the source region, a gate region disposed on the active area, and a shallow trench isolation (STI) structure surrounding the active area. In addition, the drain region includes a terminal configured to receive a stress voltage, such that a conductive path is established through the drain region to the source region.

Disclosed herein are related to a memory device including a set of memory cells and a memory controller. In one aspect, each of the set of memory cells includes a select transistor and a storage element connected in series between a corresponding bit line and a corresponding source line. In one aspect, the memory controller is configured to apply a first write voltage to a bit line coupled to a selected memory cell, apply a second write voltage to a word line coupled to a gate electrode of a select transistor of the selected memory cell during a first time period, and apply a third write voltage to a source line coupled to the selected memory cell. The second write voltage may be between the first write voltage and the third write voltage.

The systems and methods described herein consider a first channel width of transistors of driver circuitry, where the first channel width may be set to match a second channel width of a power control transistor. A control circuit, for example, may match a second channel width of a set of power control transistors to the first channel width by turning on one or more of the set of power control transistors. Matching the width of the switches of driver circuitry and the width of the set of power control transistors may reduce losses by helping to maintain impedances of the driver circuitry.

The systems and methods described herein consider a first channel width of transistors of driver circuitry, where the first channel width may be set to match a second channel width of a power control transistor. A control circuit, for example, may match a second channel width of a set of power control transistors to the first channel width by turning on one or more of the set of power control transistors. Matching the width of the switches of driver circuitry and the width of the set of power control transistors may reduce losses by helping to maintain impedances of the driver circuitry.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.