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G
PHYSICS
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G11
INFORMATION STORAGE
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G11C
STATIC STORES
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16/00
Erasable programmable read-only memories
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G11C16/02
electrically programmable
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G11C16/06
Auxiliary circuits, e.g. for writing into memory
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G11C16/34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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G11C16/3436
Arrangements for verifying correct programming or erasure
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G11C16/3468
Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
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G11C16/3472
Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
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