Provided herein is a memory device and a method of operating the memory device. The memory device may include a plurality of memory cells; a peripheral circuit configured to verify a program operation on the plurality of memory cells using a first verify voltage; and a control logic configured to control the peripheral circuit to suspend the program operation in response to a suspend command and verify the program operation on the plurality of memory cells using a second verify voltage in response to a resume command input after the suspend command. The second verify voltage may have a lower voltage level than the first verify voltage.

The present disclosure relates to a storage device comprising a memory element. The memory element may comprise a changeable physical quantity for storing information. The physical quantity may be in a drifted state. The memory element may be configured for setting the physical quantity to an initial state. Furthermore, the memory element may comprise a drift of the physical quantity from the initial state to the drifted state. The initial state of the physical quantity may be computable by means of an initialization function. The initialization function may be dependent on a target state of the physical quantity and the target state of the physical quantity may be approximately equal to the drifted state of the physical quantity.

Aspects of a storage device including a memory and a controller are provided which allow for reduction of current during program operations using pre-charge ramp rate control based on an inhibit bit line count acquired from data latches. When the inhibit bit line count is within a bit line count range, the controller pre-charges bit lines in memory at a first ramp rate to a first target voltage, and when the inhibit bit line count is outside the bit line count range, the controller pre-charges the bit lines at a second, faster ramp rate to a second, smaller target voltage. The inhibit bit line count may increase throughout a program operation, and the bit line count range may be configured for the middle of the program operation where current is typically high. Thus, a balance in power consumption and performance may be achieved during program operations using ramp rate control.

A method for programming a memory device including a first plane and a second plane is provided. The method includes simultaneously initiating programming of the first plane and the second plane, and in response to the first plane being successfully programmed and the second plane not being successfully programmed, suspending the programming of the first plane, and keeping the programming of the second plane.

Power regulation in an integrated memory assembly having control semiconductor dies and memory semiconductor is disclosed herein. A master control die regulates power usage by the integrated memory assembly. Each control die reports information about its expected power usage to the master control die. The master control die determines a plan that meets a power criterion for the integrated memory assembly. The plan may maximize the power usage in each time period, while staying within a power budget. The plan can include selecting which of the memory dies perform a memory operation (or phase of a memory operation) during a given time period. The master control die may send a die scheduling plan to each of the other control dies. Each die scheduling plan indicates when memory operations and/or phases of memory operations are to be performed.

A memory device and a method of operating the memory device are provided. The memory device includes a memory cell array including memory cells that are programmed into a plurality of program states, a peripheral circuit configured to perform a read operation on the memory cell array, and control logic configured to control the peripheral circuit to perform the read operation and to control the peripheral circuit to perform a masking process on first memory cells having a threshold voltage level higher than a first read level and second memory cells having a threshold voltage level lower than a second read level among the memory cells during the read operation.

Aspects of a storage device including a memory and a controller are provided which allow for reduction of current during program operations using pre-charge ramp rate control based on an inhibit bit line count acquired from data latches. When the inhibit bit line count is within a bit line count range, the controller pre-charges bit lines in memory at a first ramp rate to a first target voltage, and when the inhibit bit line count is outside the bit line count range, the controller pre-charges the bit lines at a second, faster ramp rate to a second, smaller target voltage. The inhibit bit line count may increase throughout a program operation, and the bit line count range may be configured for the middle of the program operation where current is typically high. Thus, a balance in power consumption and performance may be achieved during program operations using ramp rate control.

A memory device includes a memory array of memory cells and control logic, operatively coupled with the memory array. The control logic is to perform operations, which include causing the memory cells to be programmed with an initial voltage distribution representing multiple logical states; causing the memory cells to be programmed with a subsequent voltage distribution representing a subset of the multiple logical states at a higher voltage than that of the initial voltage distribution, wherein the subset of the multiple logical states is compacted above a program verify voltage level for the subsequent voltage distribution; and causing a first program verify operation of the subsequent voltage distribution to be performed on the memory cells to verify one or more voltage levels of the subsequent voltage distribution.

A memory circuit and a memory programming method adapted to program flash memory are provided. The memory circuit includes a charge pumping circuit, a voltage regulator, a voltage sensor, and a plurality of switch circuits. The charge pumping circuit generates a pumping voltage and a pumping current. The voltage regulator is coupled to the charge pumping circuit and generates a programming voltage and a programming current to program the flash memory according to the pumping voltage and the pumping current. The voltage sensor is coupled to the voltage regulator to monitor a voltage value of the programming voltage. Each of the plurality of switch circuits includes a first terminal coupled to the voltage sensor and a second terminal coupled to the flash memory. A quantity of the plurality of switch circuits that are turned on is determined by the voltage value of the programming voltage.

The present disclosure relates to a storage device comprising a memory element. The memory element may comprise a changeable physical quantity for storing information. The physical quantity may be in a drifted state. The memory element may be configured for setting the physical quantity to an initial state. Furthermore, the memory element may comprise a drift of the physical quantity from the initial state to the drifted state. The initial state of the physical quantity may be computable by means of an initialization function. The initialization function may be dependent on a target state of the physical quantity and the target state of the physical quantity may be approximately equal to the drifted state of the physical quantity.