A memory device includes a plurality of input/output (I/O) nodes, a circuit, a latch, a memory, and control logic. The plurality of I/O nodes receive a predefined data pattern. The circuit adjusts a delay for each I/O node as the predefined data pattern is received. The latch latches the data received on each I/O node. The memory stores the latched data. The control logic compares the stored latched data to an expected data pattern and sets the delay for each I/O node based on the comparison.

Methods, devices, and systems for testing a number of combinations of memory in a computer system. A modular memory device is installed in a memory channel in communication with a processor. The modular memory device includes a number of memory storage devices. The number of memory storage devices include a number of pins. For each of a number of subsets of the number of memory storage devices, a subset of the number of memory storage devices is selected, each pin of a subset of the number of pins which do not correspond to the subset of the number of memory storage devices is configured with a termination impedance, and the subset of the number of memory storage devices is tested.

Presented embodiments facilitate efficient and effective flexible implementation of different types of testing procedures in a test system. In one embodiment, a multiple-name-space testing system comprises a load board, testing electronics, and a namespace testing tracker. The load board is configured to couple with a plurality of devices under test (DUTs). The testing electronics are configured to test the plurality of DUTs, wherein the testing electronics are coupled to the load board. The controller is configured to direct testing of multiple-name-spaces across the plurality of DUTs at least in part in parallel. The controller can be coupled to the testing electronics. The namespace testing tracker is configured to track testing of the plurality of DUTs, including the testing of the multiple-name-spaces across the plurality of DUTs at least in part in parallel. In one embodiment, the DUTs are NVMe SSD devices.

A memory device includes a memory cell array and a test controller. The memory cell array includes a plurality of memory cells, where the memory cell array is divided into multiple regions. The test controller is configured to perform a parallel bit test (PBT) on the plurality of memory cells, where the test controller selects fail data including a fail data bit among internal data output from the multiple regions during the PBT, and outputs the fail data via a data input/output signal line to the outside of the memory device.

A memory device includes a plurality of pins, a controller die coupled to the isolation pin, and a memory die. The plurality of pins include an isolation pin, a test mode select pin configured to switch an operation mode of the memory die, a test clock pin configured to receive a test clock, and a test data pin configured to perform a data transmission. The controller die is coupled to the isolation pin. The memory die is coupled to the test mode select pin, the test clock pin, and the test data pin.

A memory device includes a memory cell array and a test controller. The memory cell array includes a plurality of memory cells, where the memory cell array is divided into multiple regions. The test controller is configured to perform a parallel bit test (PBT) on the plurality of memory cells, where the test controller selects fail data including a fail data bit among internal data output from the multiple regions during the PBT, and outputs the fail data via a data input/output signal line to the outside of the memory device.

In various examples, a test system is provided for executing built-in-self-test (BIST) on integrated circuits deployed in the field. The integrated circuits may include a first device and a second device, the first device having direct access to external memory, which stores test data, and the second device having indirect access to the external memory by way of the first device. In addition to providing a mechanism to permit the first device and the second device to run test concurrently, the hardware and software may reduce memory requirements and runtime associated with running the test sequences, thereby making real-time BIST possible in deployment. Furthermore, some embodiments permit a single external memory image to cater to different SKU configurations.

A memory device includes a plurality of pins, a controller die coupled to the isolation pin, and a memory die. The plurality of pins include an isolation pin, a test mode select pin configured to switch an operation mode of the memory die, a test clock pin configured to receive a test clock, and a test data pin configured to perform a data transmission. The controller die is coupled to the isolation pin. The memory die is coupled to the test mode select pin, the test clock pin, and the test data pin.

Methods, devices, and systems for testing a number of combinations of memory in a computer system. A modular memory device is installed in a memory channel in communication with a processor. The modular memory device includes a number of memory storage devices. The number of memory storage devices include a number of pins. A subset of the number of memory storage devices is selected. A subset of the plurality of pins which do not correspond to the subset of the number of memory storage devices and are not part of a memory map of the computer system is selected. Each pin of the subset of the plurality of pins configured with a termination impedance. The subset of the number of memory storage devices is tested.

In one example, a method is disclosed of compensating for leakage in an array of analog neural non-volatile memory cells, wherein the array is arranged in rows and columns, wherein each row is coupled to a word line and each column is coupled to a bitline, the method comprising measuring leakage for a column of analog neural non-volatile memory cells coupled to a bitline; storing the measured leakage value; and applying the measured leakage value during a read operation of the column of analog neural non-volatile memory cells to compensate for the leakage.